Micrcostructures of bulk and thin film YBa_2Cu_3O_(7-δ) superconductors were studied by using scanning elec-tron microscopy (SEM). It was confirmed that viscous technique processed bulk YBa_2Cu_3O_(7-δ) has a homoge...Micrcostructures of bulk and thin film YBa_2Cu_3O_(7-δ) superconductors were studied by using scanning elec-tron microscopy (SEM). It was confirmed that viscous technique processed bulk YBa_2Cu_3O_(7-δ) has a homoge-neous microstructure across the pellet diameter. Concerning the thin film, it was found that 2 ￣H￣+ ion implanta-tion with a dose of 1× 10￣(12)cm￣(-2) at 50 keV does not cause microstructural change of the film at a micrometrelevel. Combined with previous studies by using high resolution transmission electron microscopy, it appearsthat the structural modification is at an atomic scale.展开更多
Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using ...Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map（RSM）.According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm^（-2） and 1.8×10^（10） cm^（-2）,which agree with the results observed from TEM.展开更多
The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz（VHF） magnetron sputtering was investigated.The plasma properties include the ion velocity distribution funct...The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz（VHF） magnetron sputtering was investigated.The plasma properties include the ion velocity distribution function（IVDF）,electron energy probability function（EEPF）,electron density ne,ion flux Γi,and effective electron temperature Teff.These parameters were measured by a retarding field energy analyzer and a Langmuir probe in the 60 MHz magnetron sputtering,assisted with 13.56 MHz or 27.12 MHz substrate bias.The 13.56 MHz substrate bias led to broadening and multi-peaks IVDFs,Maxwellian EEPFs,as well as high electron density,ion flux,and low electron temperature.The 27.12 MHz substrate bias led to a further increase of electron density and ion flux,but made the IVDFs narrow.Therefore,the frequency of the substrate bias was a possible way to control the plasma properties in VHF magnetron sputtering.展开更多
文摘Micrcostructures of bulk and thin film YBa_2Cu_3O_(7-δ) superconductors were studied by using scanning elec-tron microscopy (SEM). It was confirmed that viscous technique processed bulk YBa_2Cu_3O_(7-δ) has a homoge-neous microstructure across the pellet diameter. Concerning the thin film, it was found that 2 ￣H￣+ ion implanta-tion with a dose of 1× 10￣(12)cm￣(-2) at 50 keV does not cause microstructural change of the film at a micrometrelevel. Combined with previous studies by using high resolution transmission electron microscopy, it appearsthat the structural modification is at an atomic scale.
基金Project supported by the National Key Research and Development Project of China(Grant No.2016YFB0400100)the Hi-tech Research Project of China(Grant Nos.2014AA032605 and 2015AA033305)+5 种基金the National Natural Science Foundation of China(Grant Nos.61274003,61422401,51461135002,and61334009)the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,and BE2015111)the Project of Green Young and Golden Phenix of Yangzhou City,the Postdoctoral Sustentation Fund of Jiangsu Province,China(Grant No.1501143B)the Project of Shandong Provinceial Higher Educational Science and Technology Program,China(Grant No.J13LN08)the Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center,Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)Research Funds from NJU–Yangzhou Institute of Opto-electronics
文摘Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction（HRXRD）and transmission electron microscopy（TEM）;the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map（RSM）.According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm^（-2） and 1.8×10^（10） cm^（-2）,which agree with the results observed from TEM.
基金supported by National Natural Science Foundation of China(Nos.11275136,10975105)
文摘The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz（VHF） magnetron sputtering was investigated.The plasma properties include the ion velocity distribution function（IVDF）,electron energy probability function（EEPF）,electron density ne,ion flux Γi,and effective electron temperature Teff.These parameters were measured by a retarding field energy analyzer and a Langmuir probe in the 60 MHz magnetron sputtering,assisted with 13.56 MHz or 27.12 MHz substrate bias.The 13.56 MHz substrate bias led to broadening and multi-peaks IVDFs,Maxwellian EEPFs,as well as high electron density,ion flux,and low electron temperature.The 27.12 MHz substrate bias led to a further increase of electron density and ion flux,but made the IVDFs narrow.Therefore,the frequency of the substrate bias was a possible way to control the plasma properties in VHF magnetron sputtering.
