Influence of the gassing materials on the dielectric properties of air

Influence of the gassing materials, such as PA6, PMMA, and POM on the dielectric properties of air are investigated. In this work, the fundamental electron collision cross section data were carefully selected and validated. Then the species compositions of the air–organic vapor mixtures were calculated based on the Gibbs free energy minimization. Finally, the Townsend ionization coefficient, the Townsend electron attachment coefficient and the critical reduced electric field strength were derived from the calculated electron energy distribution function by solving the Boltzmann transport equation. The calculation results indicated that H;O with large attachment cross sections has a great impact on the critical reduced electric field strength of the air–organic vapor mixtures. On the other hand, the vaporization of gassing materials can help to increase the dielectric properties of air circuit breakers to some degree.

Closed form soliton solutions of three nonlinear fractional models through proposed improved Kudryashov method

We introduce a new integral scheme namely improved Kudryashov method for solving any nonlinear fractional differential model.Specifically,we apply the approach to the nonlinear space-time fractional model leading the wave to spread in electrical transmission lines(s-tfETL),the time fractional complex Schrödinger(tfcS),and the space-time M-fractional Schrödinger-Hirota(s-tM-fSH)models to verify the effectiveness of the proposed approach.The implementing of the introduced new technique based on the models provides us with periodic envelope,exponentially changeable soliton envelope,rational rogue wave,periodic rogue wave,combo periodic-soliton,and combo rational-soliton solutions,which are much interesting phenomena in nonlinear sciences.Thus the results disclose that the proposed technique is very effective and straight-forward,and such solutions of the models are much more fruitful than those from the generalized Kudryashov and the modified Kudryashov methods.

Time-domain Finite Element Method for Transient Electric Field and Transient Charge Density on Dielectric Interface

This paper is devoted to solving the transient electric field and transient charge density on the dielectric interface under the electroquasistatic(EQS)field conditions with high accuracy.The proposed method is suitable for both 2-D and 3-D applications.Firstly,the governing equations represented by scalar electric potential are discretized by the nodal finite element method(FEM)in space and the finite difference method in time.Secondly,the transient constrained electric field equation on the boundary(TCEFEB)is derived to calculate the normal component of the transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface.Finally,a 2-D numerical example is employed to demonstrate the validity of the proposed method.Furthermore,the comparisons of the numerical accuracy of the proposed method in this paper with the existing FEMs for electric field intensity and charge density on the dielectric interface are conducted.The results show that the numerical accuracy of the proposed method for calculating the normal component of transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface is close to that of nodal electric potential and an order of magnitude higher than those of existing FEMs.

Analytical modeling and simulation of germanium single gate silicon on insulator TFET

This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design（TCAD） simulation results and also comparing them with results from a silicon based TFET.