ELECTRIC PROPERTY AND STRUCTURE OF EOSIN B,ROSE BENGAL,EOSIN 10B (PHLOXINE B) AND THEIR RARE EARTH COMPLEXES

The electric property and structure of some fluorescein derivatives and their rare earthcomplexes have been reported before.In order to investigate the effect of differentsubstituents on the electric property,the change of resistivity with temperature of eosin B(disodium salt of dibromodinitrofluorescein),rose bengal (disodium salt of tetrachlorotetraiodofluorescein),eosin 10B (dipotassium salt of dichlorotetrabromofluorescein) andtheir complexes with La(Ⅲ),Ce(Ⅲ),Gd(Ⅲ) and Y(Ⅲ) is studied in this paper.

THE ELECTRIC PROPERTY OF SINGLET CARBENE AND ITS ISOELECTRONIC SYSTEM^1——Electrophilic and Nucleophilic Directions of an Atom in the Molecule

The electrostatic potential of carbene and nitrene,have been calculated by AB INITIO method with 6-31G** basis set,there are positive potential regions in the directions of vacant P orbitals,and negative regions in the directions of lone-pair electrons. Therefore,atoms in these molecules have different electric properties in different directions.The idea of electrophilic and nucleophilic directions of an atom in molecules should be introduced.

Controllable synthesis of elongated hexagonal bipyramid shaped La(OH)3 nanorods and the distribution of electric property by off-axis electron holography

Rare earth oxides/hydroxides are important emerging materials owing to their unique properties. Shape-controlled synthesis of elongated hexagonal bipyramid shaped La(OH)3nanorods with different aspect ratios and trigram-shaped LaCO3OH nanosheets was systematically carried out by controlling the reaction conditions. Hydrazine and polyvinylpyrrolidone (PVP) surfactants used in synthesis are assumed to play a key “dual-template” role in determining the aspect ratio and shape of the resulting nanostructures. Elongated hexagonal bipyramid shaped La(OH)3nanorods were found to grow along the preferred orientation [0001]. Six equivalent crystallographic facets, (Formula presented.), and (Formula presented.) lattice planes, were found to be exposed on the side surfaces on each nanorod as confirmed by combined transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED) analyses. A double-polarization phenomenon was found to occur at the nanorod surfaces by employing off-axis electron holography, implying that the material could be used as an effective dielectric microwave absorber. La(OH)3nanorods with larger aspect ratios exhibit better absorption properties with respect to the maximum reflection loss and effective absorbing bandwidth. Thus, a novel method towards the reasonable design of bipyramid shaped La(OH)3nanorods exhibiting tunable microwave absorption properties is proposed based on our synthesis strategy. [Figure not available: see fulltext.] © 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

Abnormal electric transport property and magnetoresistance stability of La-Sr-K-Mn-O system

The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.

Preparation of Fluorine-free MXene Ti_(3)C_(2)T_(x) and Its Electrical Properties

The fluorine-free MXene was prepared by Lewis acid salt etching of ternary layered ceramic MAX phase material.The structure of fluorine-free MXene was characterized by scanning electron microscopy(SEM)and X-ray diffractometry(XRD).The study finds that the layer spacing of fluorine-free MXene is approximately twice that of MXene etched by the liquid-phase method,compared to the conventional liquidphase method.It also has greater capacitive properties.Therefore,the MXene prepared by this method shows a great potential for application in the field of capacitors.

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

A suitable contacting scheme for p-(Al)GaN facilitating quick feedback and accurate measurements is proposed in this study.22 nm p^(+)-GaN followed by 2 nm p-In_(0.2)Ga_(0.8)N was grown on p-type layers by metal-organic chemical vapor deposition.Samples were then cut into squares after annealing and contact electrodes using In balls were put at the corners of the squares.Good linearity between all the electrodes was confirmed inⅠ–Ⅴcurves during Hall measurements even with In metal.Serval samples taken from the same wafer showed small standard deviation of~4%for resistivity,Hall mobility and hole concentration.The influence of contact layer on the electrical characteristics of bulk p-type layers was then investigated by step etching technique using inductively coupled plasma etching and subsequent Hall-effect measurements.Identical values could be obtained consistently when a 28 nm non-conductive layer thickness at the surface was taken into account.Therefore,the procedures for evaluating the electrical properties of GaN-based p-type layers just using In balls proposed in this study are shown to be quick and useful as for the other conventionalⅢ–Ⅴmaterials.

Effect of Fluid Electrical Property Changes on Surface Transverse Wave Sensors

A fluid sensor based on the surface transverse wave (STW) delay line on ST-cut quartz has been developed and tested in a large number of fluids with different viscosity and permittivity levels.Influence of fluid mechanical and electrical properties on the sensor's response has been determined and the sensor's performance has been compared with a bulk acoustic wave (BAW) viscosity sensor.The result shows that the viscosity sensitivity of the developed STW sensor represented by the signal to noise ratio is lower than that of a 5 MHz BAW sensor.Applications of the sensor in detecting the quality of industrial fluids are discussed.

Nonlinear analysis on electrical properties in a bended composite piezoelectric semiconductor beam

In this paper,the interactions between the transverse loads and the electrical field quantities are investigated based on the nonlinear constitutive relation.By considering a composite beam consisting of a piezoelectric semiconductor and elastic layers,the nonlinear model is established based on the phenomenological theory and Euler’s beam theory.Furthermore,an iteration procedure based on the differential quadrature method(DQM)is developed to solve the nonlinear governing equations.Before analysis,the convergence and correctness are surveyed.It is found that the convergence of the proposed iteration is fast.Then,the transverse pressure induced electrical field quantities are investigated in detail.From the calculated results,it can be found that the consideration of nonlinear constitutive relation is necessary for a beam undergoing a large load.Compared with the linear results,the consideration of the nonlinear constitutive relation breaks the symmetry for the electric potential,the electric field,and the perturbation carrier density,and has little influence on the electric displacement.Furthermore,the non-uniform pressures are considered.The results show that the distributions of the electric field quantities are sensitively altered.It indicates that the electrical properties can be manipulated with the design of different transverse loads.The conclusions in this paper could be the guidance on designing and manufacturing electronic devices accurately.

Exploring heteroepitaxial growth and electrical properties of α-Ga_(2)O_(3) films on differently oriented sapphire substrates

This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction and Raman spectroscopy, and elucidate thin film epitaxial relationships with the underlying sapphire substrates. The oxygen vacancy concentration of α-Ga_(2)O_(3) thin films on m-plane and r-plane sapphire substrates are higher than α-Ga_(2)O_(3) thin film on a-plane sapphire substrates. All three thin films have a high transmission of over 80% in the visible and near-ultraviolet regions, and their optical bandgaps stay around 5.02–5.16 eV. Hall measurements show that the α-Ga_(2)O_(3) thin film grown on r-plane sapphire has the highest conductivity of 2.71 S/cm, which is at least 90 times higher than the film on a-plane sapphire. A similar orientation-dependence is seen in their activation energy as revealed by temperature-dependent conductivity measurements, with 0.266, 0.079, and 0.075eV for the film on a-, m-, r-plane, respectively. The origin of the distinct transport behavior of films on differently oriented substrates is suggested to relate with the distinct evolution of oxygen vacancies at differently oriented substrates. This study provides insights for the substrate selection when growing α-Ga_(2)O_(3) films with tunable transport properties.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Effects of filler loading and surface modification on electrical and thermal properties of epoxy/montmorillonite composite

Epoxy-based composites containing montmorillonite（MMT） modified by silylation reaction with γ-aminopropyltriethoxysilane（γ-APTES） and 3-（glycidyloxypropyl） trimethoxysilane（GPTMS） are successfully prepared.The effects of filler loading and surface modification on the electrical and thermal properties of the epoxy/MMT composites are investigated. Compared with the pure epoxy resin, the epoxy/MMT composite, whether MMT is surface-treated or not, shows low dielectric permittivity, low dielectric loss, and enhanced dielectric strength. The MMT in the epoxy/MMT composite also influences the thermal properties of the composite by improving the thermal conductivity and stability.Surface functionalization of MMT not only conduces to the better dispersion of the nanoparticles, but also significantly affects the electric and thermal properties of the hybrid by influencing the interfaces between MMT and epoxy resin.Improved interfaces are good for enhancing the electric and thermal properties of nanocomposites. What is more, the MMT modified with GPTMS rather than γ-APTES is found to have greater influence on improving the interface between the MMT filler and polymer matrices, thus resulting in lower dielectric loss, lower electric conductivity, higher breakdown strength, lower thermal conductivity, and higher thermal stability.

Electrochemical anodic oxidation assisted fabrication of memristors

Owing to the advantages of simple structure,low power consumption and high-density integration,memristors or memristive devices are attracting increasing attention in the fields such as next generation non-volatile memories,neuromorphic computation and data encryption.However,the deposition of memristive films often requires expensive equipment,strict vacuum conditions,high energy consumption,and extended processing times.In contrast,electrochemical anodizing can produce metal oxide films quickly(e.g.10 s) under ambient conditions.By means of the anodizing technique,oxide films,oxide nanotubes,nanowires and nanodots can be fabricated to prepare memristors.Oxide film thickness,nanostructures,defect concentrations,etc,can be varied to regulate device performances by adjusting oxidation parameters such as voltage,current and time.Thus memristors fabricated by the anodic oxidation technique can achieve high device consistency,low variation,and ultrahigh yield rate.This article provides a comprehensive review of the research progress in the field of anodic oxidation assisted fabrication of memristors.Firstly,the principle of anodic oxidation is introduced;then,different types of memristors produced by anodic oxidation and their applications are presented;finally,features and challenges of anodic oxidation for memristor production are elaborated.

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

Electronic properties of 2D materials and their junctions

With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.

Investigation on the Novel High-performance Copper/Graphene Composite Conductor for High Power Density Motor

High-performance Cu/Graphene composite wire synergistically strengthened by nano Cr_(3)C_(2) phase was directly synthesized via hot press sintering followed by severe cold plastic deformation, using liquid paraffin and CuCr alloy powder as the raw materials. Since graphene is in situ formed under the catalysis of copper powder during the sintering process, the problem that graphene is easy to agglomerate and difficult to disperse uniformly in the copper matrix has been solved. The nano Cr_(3)C_(2)-particles nailed at the interface favor to improve the interface bonding. The Cu/Graphene composite possesses high electrical conductivity, hardness, and plasticity. The composite wire exhibits high electrical conductivity of 96.93% IACS, great tensile strength of 488MPa, and excellent resistance to softening. Even after annealing at 400℃ for 1 h, the tensile strength can still reach 268 MPa with a conductivity of about 99.14% IACS.The wire's temperature coefficient of resistance(TCR) is largely reduced to 0.0035/℃ due to the complex structure,which leads the wire to present low resistivity at higher temperatures. Such Cu/Graphene composite wire with excellent comprehensive performance has a good application prospect in high-power density motors.

Structure and Electric Properties of (1-x)(Bi_(1/2)Na_(1/2)) TiO_3-xBaTiO_3 Systems

The structural, dielectric and piezoelectric properties of （1-x）（Bi1/2Na1/2） TiO3-xBaTiO3 ceramics were investigated for the compositional range, x=0.02, 0.04, 0.06, 0.08, 0.10. The samples were synthesized by a conventional solid-state reaction technique. All compositions show a single perovskite structure, and X-ray powder diffraction patterns can be indexed using a rhombohedral structure. Lattice constants and lattice distortion increase while the amount of BaTiO3 increases. The X-ray diffraction results show the morphotropic phase boundary （MPB） of （1-x）（Bi1/2Na12） TiO3-xBaTiO3 exists in near x=0.06-0.08. Temperature dependence of dielectric constant eT33/ε0 measurement reveals that all compositions experience one structural phase and two ferroelectric phases transition below 400℃： rhombohedral （or rhombohedral plus tetragonal） ferroelectric phase ←→ tetragonal antiferroelectric phase ←→ tetragonal paraelectric phase. Relaxor behaviors exist in the course of ferroelectric to antiferroelectric phase transition. Dielectric and piezoelectric properties are enhanced in the MPB range for （ 1-x）（Bi1/2Na1/2）TiO3-xBaTiO3.

Effect of SiO_2 addition on the microstructure and electrical properties of ZnO-based varistors

The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.

Microstructure and electrical properties of Y_2O_3-doped ZnO-based varistor ceramics prepared by high-energy ball milling

Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.

Microstructure and Electrical Properties of Er_2O_3-Doped ZnO-Based Varistor Ceramics Prepared by High-Energy Ball Milling

The microstructure, electrical properties and density of ZnO-based varistor ceramics with different Er2O3 content prepared by high-energy ball milling （HEBM） and sintered at 800℃ were investigated. With increasing Er2O3 content, the ZnO grain size decreases due to the Er-rich phases inhibiting grain growth ; and nonlinear coefficient （ α ） decreases because of the decrease of barrier height （φB） The breakdown voltage （Eb） and density increase, whereas leakage current （IL） decreases with increasing Er2O3 content. The barrier height （φB）, donor concentration （Nd）, density of interface states （Ns） decrease and barrier width （ω） increases with increasing Er2O3 content due to acceptor effect of Er2O3 in varistor ceramics.