Electrical characterization of an individual nanowire using flexible nanoprobes fabricated by atomic force microscopy-based manipulation

Nanowires have emerged as promising one-dimensional materials with which to construct various nanocircuits and nanosensors.However,measuring the electrical properties of individual nanowires directly remains challenging because of their small size,thereby hindering the comprehensive understanding of nanowire-based device performance.A crucial factor in achieving reliable electrical characterization is establishing well-determined contact conditions between the nanowire sample and the electrodes,which becomes particularly difficult for soft nanowires.Introduced here is a novel technique for measuring the conductivity of an individual nanowire with the aid of automated nanomanipulation using an atomic force microscope.In this method,two nanowire segments cut from the same silver nanowire are positioned onto a pair of gold electrodes,serving as flexible nanoprobes to establish controllable contact with the sample.By changing the contact points along the nanowire sample,conductivity measurements can be performed on different regions,thereby eliminating the influence of contact resistance by analyzing multiple current–voltage curves.Using this approach,the resistivity of a 100-nm-diameter silver nanowire is determined to be 3.49×10^(−8)Ωm.

Pick-up strategies for and electrical characterization of ZnO nanowires with a SEM-based nanomanipulator

Because of their unique mechanical and electrical properties,zinc oxide(ZnO)nanowires are used widely in microscopic and nanoscopic devices and structures,but characterizing them remains challenging.In this paper,two pick-up strategies are proposed for characterizing the electrical properties of ZnO nanowires using SEM equipped with a nanomanipulator.To pick up nanowires efficiently,direct sampling is compared with electrification fusing,and experiments show that direct sampling is more stable while electrification fusing is more efficient.ZnO nanowires have cut-off properties,and good Schottky contact with the tungsten probes was established.In piezoelectric experiments,the maximum piezoelectric voltage generated by an individual ZnO nanowire was 0.07 V,and its impedance decreased with increasing input signal frequency until it became stable.This work offers a technical reference for the pick-up and construction of nanomaterials and nanogeneration technology.

Synthesis and electrical characterization of tungsten oxide nanowires

Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition （CVD） method with vapour-solid （VS） mechanism.Tin powders are used to control oxygen concentration in the furnace,thereby assisting the growth of the tungsten oxide nanowires.The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I-V curves are measured by an in situ transmission electron microscope （TEM） to investigate the electrical properties of the nanowires.All of the I-V curves observed are symmetric,which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I-V curves by using a metal semiconductor-metal （MSM） model give some intrinsic parameters of the tungsten oxide nanowires,such as the carrier concentration,the carrier mobility and the conductivity.

A comparison of power measurement techniques and electrical characterization of an atmospheric pressure plasma jet

In the last two decades a growing interest has been shown in the investigation of atmospheric pressure plasma jets(APPJs)that operate in contact with liquid samples.In order to form a complete picture about such experimental systems,it is necessary to perform detailed diagnostics of plasma jets,as one step that will enable the adjustment of system properties for applications in different areas.In this work,we conducted a detailed electrical characterisation of a plasma system configuration used for water treatment.A helium plasma jet,with a pin electrode powered by a continuous sine wave at a frequency of 330 k Hz,formed a streamer that was in contact with a distilled water sample.An electrical circuit allowed the monitoring of electrical signals supplied to the jet and also to the plasma itself.An electrical characterisation together with power consumption measurements was obtained by using two different methods.The first method was based on the direct measurements of voltage and current signals,while in the second method we used'Lissajous figures'.We compared these two methods when used for discharge power estimation and addressed their advantages and limitations.The results showed that both of these methods could be used to successfully determine power consumed by a discharge in contact with water,but only when taking into account power dissipation without plasma.

Novel electrical characterization for advanced CMOS gate dielectrics

This paper reviews the following electrical characterization techniques for measuring the microscopic bonding structures, impurities, and electrically active defects in advanced CMOS gate stacks： 1） inelastic electron tunneling spectroscopy （IETS）, 2） lateral profiling of threshold voltages, interface-trap density, and oxide charge density distributions along the channel of an MOSFET, and 3） pulse agitated substrate hot electron injection （PASHEI） technique for measuring trapping effects in the gate dielectric at low and modest gate voltages.

Studies on conjugated fluoro-polymers Ⅱ. Characterization and electrical conductivity of polyperfluorobutyne-2

Polyperfluorobutyne-2 (PPFB), a conjugated polymer, was characterized with IR, UV-VIS, fluorescence spectra etc. The electrical conductivities of the polymer doped with various dopants were investigated. The effect of the molecular structure of PPFB on the electrical properties was discussed.

Antimony fluoride(SbF_(3)):A potent hole suppressor for tin(II)-halide perovskite devices

Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidization characteristics make Sn^(2+)-based perovskites highly p-doped with excessive hole concentrations,which significantly hinder their applications.Herein,we demonstrate a potent hole inhibitor of antimony fluoride(SbF_(3)),which possesses a higher hole-suppression capability than conventional tin fluo-ride(SnF_(2)).A small amount of SbF_(3) allows a wide range of hole-density modulation with no or less SnF_(2) addition,thus mitigating the negative effects of using only SnF_(2).A SnF_(2)/SbF_(3) co-additive approach was further developed to achieve high-performance Sn 2+perovskite thin-film transis-tors operated in the enhancement mode with a five-fold enhancement of the field-effect mobility and improved operational stability compared to using only SnF_(2).We expect that the SbF 3 hole suppressor and co-additive approach can provide opportunities for the development of high-efficiency Sn^(2+)-perovskite optoelectronic devices.

Technical Characteristics Analysis for Toyota Prius Hybrid Vehicle

In order to solve the problem effectively that increasing car ownership relies on limited resources like oil and the resulting environmental pollution because of vehicle exhaust,＂New energy vehicles＂is not a new conception which is mentioned frequently and has been used in practical applications in our daily life. As a typical representative of the use of new energy vehicles,Prius,a kind of gas-electric hybrid cars which are made by Toyota is a very typical type in technique and application. Using Prius as an example,we will focus on its chemical reaction principle of electrical energy storage device and evaluation parameters,the structure of driving motors and gives the dqmodel of the electrical machine in dqcoordinates,the structure of dynamic coupling device,convertor assembly which including four kinds of convertor and its function,finally,introducing the working principles and characteristics of the system assembly in this paper.