At presure 1.0-4.0 GPa and temperature 1073-1423 K and under oxygen partial pressure conditions, a YJ-3000t multi-anvil solid high-pressure apparatus and Sarltron-1260 Impedance/Gain-Phase analyzer were employed to co...At presure 1.0-4.0 GPa and temperature 1073-1423 K and under oxygen partial pressure conditions, a YJ-3000t multi-anvil solid high-pressure apparatus and Sarltron-1260 Impedance/Gain-Phase analyzer were employed to conduct an in-situ measurement of the electrical conductivity of orthopyroxene. The buffering reagents consist of Ni＋NiO, Fe＋Fe3O4, Fe＋FeO and Mo＋MoO2 in order to control the environmental oxygen fugacity. Experimental results made clear that： （1） within the measuring frequency range from 10-1 to 106 Hz, the complex impedance （R） is of intensive dependence on the frequency; （2） The electrical conductivity （a） tends to increase along to the rise of temperature （T）, and Log a vs. 1/ T fit the Arrenhius linear relations; （3） Under the control of oxygen buffer Fe＋Fe3O4, with the rise of pressure, the activation enthalpy tends to increase whereas the electrical conductivity tends to decrease. The activation energy and activation volume of the main current carders of orthopyroxene have been obtained, which are （1.715±0.035） eV and （0.03±0.01） cm^3/mol, respectively; （4） Under given pressure and temperature, the electrical conductivity tends to increase with increasing oxygen fugacity, while under given pressure the activation enthalpy tends to decrease with increasing oxygen fugacity; and （5） The sample＇s small polarons mechanism has provided a reasonable explanations to the conduction behavior at high temperature and high pressure.展开更多
Five different compositions of KxV2O5-nH2O （where prepared by the sol-gel process. Electrical conductiv x=0.00, 0.0017, 0.0049, 0.0064 and 0.0091 mol） were ty and thermoelectric power were measured parallel to the s...Five different compositions of KxV2O5-nH2O （where prepared by the sol-gel process. Electrical conductiv x=0.00, 0.0017, 0.0049, 0.0064 and 0.0091 mol） were ty and thermoelectric power were measured parallel to the substrate surface in the temperature range of 300-480 K. The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content. The conductivity of the present system was primarily determined by hopping carrier mobility. The carrier density was evaluated as well. The conduction was confirmed to obey non-adiabatic small polaron hopping. The thermoelectric power or Seebeck effect, increased with increasing K ions content. The results obtained indicated that an n-type semiconducting behavior within the temperature range was investigated.展开更多
基金This research project was granted by the Knowledge-Innovation Program sponsored by the Chinese Academy of Sciences(KZCX3-SW-124).
文摘At presure 1.0-4.0 GPa and temperature 1073-1423 K and under oxygen partial pressure conditions, a YJ-3000t multi-anvil solid high-pressure apparatus and Sarltron-1260 Impedance/Gain-Phase analyzer were employed to conduct an in-situ measurement of the electrical conductivity of orthopyroxene. The buffering reagents consist of Ni＋NiO, Fe＋Fe3O4, Fe＋FeO and Mo＋MoO2 in order to control the environmental oxygen fugacity. Experimental results made clear that： （1） within the measuring frequency range from 10-1 to 106 Hz, the complex impedance （R） is of intensive dependence on the frequency; （2） The electrical conductivity （a） tends to increase along to the rise of temperature （T）, and Log a vs. 1/ T fit the Arrenhius linear relations; （3） Under the control of oxygen buffer Fe＋Fe3O4, with the rise of pressure, the activation enthalpy tends to increase whereas the electrical conductivity tends to decrease. The activation energy and activation volume of the main current carders of orthopyroxene have been obtained, which are （1.715±0.035） eV and （0.03±0.01） cm^3/mol, respectively; （4） Under given pressure and temperature, the electrical conductivity tends to increase with increasing oxygen fugacity, while under given pressure the activation enthalpy tends to decrease with increasing oxygen fugacity; and （5） The sample＇s small polarons mechanism has provided a reasonable explanations to the conduction behavior at high temperature and high pressure.
基金supported by funds from the Natural Science Fundation of China (No.40874034,40537033,)Program for New Century Excellent Talents in University (NCET-05-0553)+2 种基金the graduate innovation of USTC (No.KD2007059)funds of Heifei University Technology (No. 2009HGXJ002)COE-21 Collaborative Research Program at ISEI, Misasa, Japan
文摘Five different compositions of KxV2O5-nH2O （where prepared by the sol-gel process. Electrical conductiv x=0.00, 0.0017, 0.0049, 0.0064 and 0.0091 mol） were ty and thermoelectric power were measured parallel to the substrate surface in the temperature range of 300-480 K. The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content. The conductivity of the present system was primarily determined by hopping carrier mobility. The carrier density was evaluated as well. The conduction was confirmed to obey non-adiabatic small polaron hopping. The thermoelectric power or Seebeck effect, increased with increasing K ions content. The results obtained indicated that an n-type semiconducting behavior within the temperature range was investigated.
