This study introduces a continuum medium approximation(CMA)and an empirical effective medium approxi-mation(EMA)-type formulation to estimate the transport properties,including electrical conductivity,thermal conducti...This study introduces a continuum medium approximation(CMA)and an empirical effective medium approxi-mation(EMA)-type formulation to estimate the transport properties,including electrical conductivity,thermal conductivity,Seebeck coefficient,and Hall mobility,of nanostructured composites.The CMA incorporates the interface parameters mediated by newly introduced distribution functions to resolve predictions that deviate from the inclusion properties at its volume fraction of 1 in current EMAs and yields predictions agreed well with both the empirical EMA and experimental data.The empirical EMA-type formulation resolves the differ-ences in CMA predictions for the media A_(1-x)B_(x)and B_(1-x)A_(x)and provides a unique prediction that agrees very well with experimental data at a given volume fraction ranging from 0 to 1.The effects of the interface param-eters on the transport properties were investigated.The results indicated that the efficiency of nanostructured composites could be further improved by optimizing the interface parameters.展开更多
The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness. It is found that the resistivity of the...The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness. It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm. Two significant effects of layer interface scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales. The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair （F-S） and Mayadas-Shatzkes （M-S） combined model.展开更多
Membrane/solution interface consists of a neutral concentration polai layer(CPL) and a charge layer(CL) under external electrical field, and the neutral CPL can be neglected under high frequency AC electrical field. T...Membrane/solution interface consists of a neutral concentration polai layer(CPL) and a charge layer(CL) under external electrical field, and the neutral CPL can be neglected under high frequency AC electrical field. The relationship of CL thickness e with electrolyte concentration C and fixed ion exchange sites density σ in membrane surface layer can be expressed as e展开更多
We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powe...We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest Nt of 5.68×10^11 cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage（V（ON）） of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio（I（ON）/I（OFF）） of^8 x 10^8.With increasing Nt,the V（ON）,S.S and I（ON）/I（OFF） were suppressed to-9.40 V,0.24 V/dec and 2.59×10^8,respectively.The V（TH） shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.展开更多
文摘This study introduces a continuum medium approximation(CMA)and an empirical effective medium approxi-mation(EMA)-type formulation to estimate the transport properties,including electrical conductivity,thermal conductivity,Seebeck coefficient,and Hall mobility,of nanostructured composites.The CMA incorporates the interface parameters mediated by newly introduced distribution functions to resolve predictions that deviate from the inclusion properties at its volume fraction of 1 in current EMAs and yields predictions agreed well with both the empirical EMA and experimental data.The empirical EMA-type formulation resolves the differ-ences in CMA predictions for the media A_(1-x)B_(x)and B_(1-x)A_(x)and provides a unique prediction that agrees very well with experimental data at a given volume fraction ranging from 0 to 1.The effects of the interface param-eters on the transport properties were investigated.The results indicated that the efficiency of nanostructured composites could be further improved by optimizing the interface parameters.
基金supported by the National Basic Research Program of China(No.2004CB619303)partially by the National Natural Science Foundation of China(No.50571103 and 50971125)(B.Zhang)appreciates the support from the Program for Changjiang Scholars and Innovative Research Team in Northeastern University(IRT0713)
文摘The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness. It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm. Two significant effects of layer interface scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales. The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair （F-S） and Mayadas-Shatzkes （M-S） combined model.
基金Project(02-09-01) supported by Panzhihua Iron and Steel Corporation,China
文摘Membrane/solution interface consists of a neutral concentration polai layer(CPL) and a charge layer(CL) under external electrical field, and the neutral CPL can be neglected under high frequency AC electrical field. The relationship of CL thickness e with electrolyte concentration C and fixed ion exchange sites density σ in membrane surface layer can be expressed as e
文摘We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest Nt of 5.68×10^11 cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage（V（ON）） of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio（I（ON）/I（OFF）） of^8 x 10^8.With increasing Nt,the V（ON）,S.S and I（ON）/I（OFF） were suppressed to-9.40 V,0.24 V/dec and 2.59×10^8,respectively.The V（TH） shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in Nt contributes to an improvement in the electrical properties and stability.
