Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has a...Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.展开更多
High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were ...High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.展开更多
Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm...Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.展开更多
As interest in double perovskites is growing,especially in applications like photovoltaic devices,understanding their mechanical properties is vital for device durability.Despite extensive exploration of structure and...As interest in double perovskites is growing,especially in applications like photovoltaic devices,understanding their mechanical properties is vital for device durability.Despite extensive exploration of structure and optical properties,research on mechanical aspects is limited.This article builds a vacancyordered double perovskite model,employing first-principles calculations to analyze mechanical,bonding,electronic,and optical properties.Results show Cs_(2)Hfl_(6),Cs_(2)SnBr_(6),Cs_(2)SnI_(6),and Cs_(2)PtBr_(6)have Young's moduli below 13 GPa,indicating flexibility.Geometric parameters explain flexibility variations with the changes of B and X site composition.Bonding characteristic exploration reveals the influence of B and X site electronegativity on mechanical strength.Cs_(2)SnBr_(6)and Cs_(2)PtBr_(6)are suitable for solar cells,while Cs_(2)HfI_(6)and Cs_(2)TiCl_(6)show potential for semi-transparent solar cells.Optical property calculations highlight the high light absorption coefficients of up to 3.5×10^(5) cm^(-1)for Cs_(2)HfI_(6)and Cs_(2)TiCl_(6).Solar cell simulation shows Cs_(2)PtBr_(6)achieves 22.4%of conversion effciency.Cs_(2)ZrCl_(6)holds promise for ionizing radiation detection with its 3.68 eV bandgap and high absorption coefficient.Vacancy-ordered double perovskites offer superior flexibility,providing valuable insights for designing stable and flexible devices.This understanding enhances the development of functional devices based on these perovskites,especially for applications requiring high stability and flexibility.展开更多
Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) we...Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.展开更多
Fast neutron flux measurements with high count rates and high time resolution have important applications in equipment such as tokamaks.In this study,real-time neutron and gamma discrimination was implemented on a sel...Fast neutron flux measurements with high count rates and high time resolution have important applications in equipment such as tokamaks.In this study,real-time neutron and gamma discrimination was implemented on a self-developed 500-Msps,12-bit digitizer,and the neutron and gamma spectra were calculated directly on an FPGA.A fast neutron flux measurement system with BC-501A and EJ-309 liquid scintillator detectors was developed and a fast neutron measurement experiment was successfully performed on the HL-2 M tokamak at the Southwestern Institute of Physics,China.The experimental results demonstrated that the system obtained the neutron and gamma spectra with a time accuracy of 1 ms.At count rates of up to 1 Mcps,the figure of merit was greater than 1.05 for energies between 50 keV and 2.8 MeV.展开更多
In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are of...In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.展开更多
In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and perfo...In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.展开更多
Quantum key distribution(QKD),rooted in quantum mechanics,offers information-theoretic security.However,practi-cal systems open security threats due to imperfections,notably bright-light blinding attacks targeting sin...Quantum key distribution(QKD),rooted in quantum mechanics,offers information-theoretic security.However,practi-cal systems open security threats due to imperfections,notably bright-light blinding attacks targeting single-photon detectors.Here,we propose a concise,robust defense strategy for protecting single-photon detectors in QKD systems against blinding attacks.Our strategy uses a dual approach:detecting the bias current of the avalanche photodiode(APD)to defend against con-tinuous-wave blinding attacks,and monitoring the avalanche amplitude to protect against pulsed blinding attacks.By integrat-ing these two branches,the proposed solution effectively identifies and mitigates a wide range of bright light injection attempts,significantly enhancing the resilience of QKD systems against various bright-light blinding attacks.This method forti-fies the safeguards of quantum communications and offers a crucial contribution to the field of quantum information security.展开更多
The Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor(GECAM)mission is designed to monitor the Gamma-Ray Bursts(GRBs)associated with gravitational waves and other high-energy transient sources...The Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor(GECAM)mission is designed to monitor the Gamma-Ray Bursts(GRBs)associated with gravitational waves and other high-energy transient sources.The mission consists of two microsatellites which are planned to operate at the opposite sides of the Earth.Each GECAM satellite could detect and localize GRBs in about 8 keV-5 MeV with its 25 Gamma-Ray Detectors(GRDs).In this work,we report the in-flight energy calibration of GRDs using the characteristic gamma-ray lines in the background spectra,and show their performance evolution during the commissioning phase.Besides,a preliminary cross-calibration of energy response with Fermi GBM data is also presented,validating the energy response of GRDs.展开更多
The Solar X-ray Detector(SXD)on-board the Macao Science Satellite-1B(MSS-1B)was successfully launched via the Chinese Long March-2C rocket on 21 May 2023,and commenced operations in early June of the same year.The MSS...The Solar X-ray Detector(SXD)on-board the Macao Science Satellite-1B(MSS-1B)was successfully launched via the Chinese Long March-2C rocket on 21 May 2023,and commenced operations in early June of the same year.The MSS-1B/Soft X-ray Detection Units(SXDUs)employ two silicon drift detectors(SDDs),providing a wide range of energy spectra spanning from 0.7 to 24 keV.Notably,the SXDUs deliver a high-resolution capability of 0.14 keV@5.9 keV and operate with a time cadence of 1 second.Here,we perform thorough calibrations of the MSS-1B/SXDUs,employing a combination of ground experiments and simulations.In addition,quantitative analysis comparing the flux measurements obtained by the MSS-1B/SXDUs to the data collected by the Geostationary Operational Environmental Satellite(GOES),provides compelling evidence of their consistency.Furthermore,the preliminary spectral analysis results showcase the robustness and expected performance of the MSS-1B/SXDUs,unlocking their potential for facilitating the study of dynamic evolution of solar flares.Moreover,the innovative MSS-1B/Solar X-ray Detector facilitates concurrent observations of solar soft and hard X-rays,thereby making valuable contributions to the advancements in solar research.展开更多
The fluorine-containing organic polymer was synthesized from 3, 3', 4, 4'-Bisphenyltetracarboxylic (BPDA), and 2,2-Bis (3-amino-4-hydroxyyphenyl) hexafluoropropane (6FHP). It is a first-step preparation of a p...The fluorine-containing organic polymer was synthesized from 3, 3', 4, 4'-Bisphenyltetracarboxylic (BPDA), and 2,2-Bis (3-amino-4-hydroxyyphenyl) hexafluoropropane (6FHP). It is a first-step preparation of a preimided hydroxy-containing polyimide, followed by the covalent bonding of an active chromophore, dispersed red 19 (DR19), onto the backbone of the polyimide via the Mitsunobu reaction. The nonlinear optical (NLO) containing polyimide was synthesized. The differential scanning calorimeter (DSC)and thermal gravimetric analysis (TGA) exhibited Tg and the temperature Tg at which 5 % mass losses occurring of polymer were 248 and 309 ℃, respectively. A reflective electro-optic (EO) modulator using this polymer was fabricated. The optical nonlinearities were determined to be d33 = 5. 209×10^-9 esu (poling voltage of 3.6 kV, 205 ℃) and d33 =7. 418×10^-9esu (poling voltage of 3. 8 kV, 210 ℃) by the second harmonic generation method in in-situ condition at a fundamental wavelength of 1 064 nm. The EO coefficients 733 of the polymer layer in the EO modulator were determined to be 2. 182 pm/V (poling voltage of 3.6 kV, 205 ℃) and 3. 107 pm/V (poling voltage of 3.8 kV, 210 ℃) at 1064 nm by an attenuated-total-reflection (ATR) method.展开更多
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOl). Three gate-oxide layers embedded...We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOl). Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.展开更多
A Mach-Zehnder(MZ) electro-optic(EO) modulator are real iz ed,with three optical layers as polymer materials.The functional layer is the co rona poled crosslinkable polyurethane.The ridge waveguide is fabricated by us...A Mach-Zehnder(MZ) electro-optic(EO) modulator are real iz ed,with three optical layers as polymer materials.The functional layer is the co rona poled crosslinkable polyurethane.The ridge waveguide is fabricated by using the spin-coating,poling,photolithography and oxygen reactive ion etching(RIE) techniques.The mode and the modulation properties of these devices are demonstra ted in a micron control system,while the light source works at the wavelength of 1 31 or 1 55 micron.展开更多
After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military ...After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.展开更多
A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy. Unlike a common MZ interferometer, all the ...A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy. Unlike a common MZ interferometer, all the components are connected via polarization-maintaining fibers. At the same time, a polarized DFB laser with a maximum power output of 10mW is adopted as the light source to induce a large extinction ratio. Here,we take it to determine the electro-optical coefficients of a very thin superlattice structure with GaAs, KTP, and GaN as comparative samples. The measured EO coefficients show good comparability with the others.展开更多
Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many resear...Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.展开更多
Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different method...Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.展开更多
An accurate energy calibration of a 5"× 2" BC501A liquid scintillator-based neutron detector by means of photon sources and the unfolding of pulse height spectra are described. The photon responses were measure...An accurate energy calibration of a 5"× 2" BC501A liquid scintillator-based neutron detector by means of photon sources and the unfolding of pulse height spectra are described. The photon responses were measured with 22Na, 137Cs and 54Mn photon sources and simulated using the GRESP code, which was developed at the Physiknlisch Technische Bundesanstalt in Germany. Pulse height spectra produced by three different photon sources were employed to investigate the effects of the unfolding techniques. It was found that the four unfolding codes of the HEPRO and UMG3.3 packages, including GRAVEL, UNFANA, MIEKE and MAXED, performed well with the test spectra and produced generally consistent results. They could therefore be used to obtain neutron energy spectra in toknmak experiments.展开更多
基金supported by the project“PARIDE”(Perovskite Advanced Radiotherapy&Imaging Detectors),funded under the Regional Research and Innovation Programme POR-FESR Lazio 2014-2020(project number:A0375-2020-36698).
文摘Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.
基金Research of the photoelectric properties of theκ(ε)-Ga_(2)O_(3)films was supported by the Russian Science Foundation,grant number 20-79-10043-P.Fabrication of the ultraviolet detectors based on theκ(ε)-Ga_(2)O_(3)layers was supported by the grant under the Decree of the Government of the Rus-sian Federation No.220 of 09 April 2010(Agreement No.075-15-2022-1132 of 01 July 2022)Research of the structural prop-erties of theκ(ε)-Ga_(2)O_(3)was supported by the St.Petersburg State University,grant number 94034685.
文摘High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.
基金supported by the National Key Research and Development Program of China(No.2020YFE0202002)the National Natural Science Foundation of China(Nos.11875146 and U1932143)。
文摘Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.
基金supported by the National Natural Science Foundation of China(62305261,62305262)the Natural Science Foundation of Shaanxi Province(2024JC-YBMS-021,2024JC-YBMS-788,2023-JC-YB-065,2023-JC-QN-0693,2022JQ-652)+1 种基金the Xi’an Science and Technology Bureau of University Service Enterprise Project(23GXFW0043)the Cross disciplinary Research and Cultivation Project of Xi’an University of Architecture and Technology(2023JCPY-17)。
文摘As interest in double perovskites is growing,especially in applications like photovoltaic devices,understanding their mechanical properties is vital for device durability.Despite extensive exploration of structure and optical properties,research on mechanical aspects is limited.This article builds a vacancyordered double perovskite model,employing first-principles calculations to analyze mechanical,bonding,electronic,and optical properties.Results show Cs_(2)Hfl_(6),Cs_(2)SnBr_(6),Cs_(2)SnI_(6),and Cs_(2)PtBr_(6)have Young's moduli below 13 GPa,indicating flexibility.Geometric parameters explain flexibility variations with the changes of B and X site composition.Bonding characteristic exploration reveals the influence of B and X site electronegativity on mechanical strength.Cs_(2)SnBr_(6)and Cs_(2)PtBr_(6)are suitable for solar cells,while Cs_(2)HfI_(6)and Cs_(2)TiCl_(6)show potential for semi-transparent solar cells.Optical property calculations highlight the high light absorption coefficients of up to 3.5×10^(5) cm^(-1)for Cs_(2)HfI_(6)and Cs_(2)TiCl_(6).Solar cell simulation shows Cs_(2)PtBr_(6)achieves 22.4%of conversion effciency.Cs_(2)ZrCl_(6)holds promise for ionizing radiation detection with its 3.68 eV bandgap and high absorption coefficient.Vacancy-ordered double perovskites offer superior flexibility,providing valuable insights for designing stable and flexible devices.This understanding enhances the development of functional devices based on these perovskites,especially for applications requiring high stability and flexibility.
基金support of the Russian Science Foundation,grant number 20-79-10043-P.
文摘Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.
基金supported by the National Magnetic Confinement Fusion Program of China(No.2019YFE03020002)the National Natural Science Foundation of China(Nos.12205085 and12125502)。
文摘Fast neutron flux measurements with high count rates and high time resolution have important applications in equipment such as tokamaks.In this study,real-time neutron and gamma discrimination was implemented on a self-developed 500-Msps,12-bit digitizer,and the neutron and gamma spectra were calculated directly on an FPGA.A fast neutron flux measurement system with BC-501A and EJ-309 liquid scintillator detectors was developed and a fast neutron measurement experiment was successfully performed on the HL-2 M tokamak at the Southwestern Institute of Physics,China.The experimental results demonstrated that the system obtained the neutron and gamma spectra with a time accuracy of 1 ms.At count rates of up to 1 Mcps,the figure of merit was greater than 1.05 for energies between 50 keV and 2.8 MeV.
基金Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,62104237,62004205)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057)+1 种基金Shanghai Science and Technology Committee Rising-Star Program(20QA1410500)Shanghai Sail Plans(21YF1455000)。
文摘In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.
基金supported by the National Natural Science Foundation of China(Nos.11875274 and U1232202)。
文摘In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.
基金This work was supported by the Major Scientific and Technological Special Project of Anhui Province(202103a13010004)the Major Scientific and Technological Special Project of Hefei City(2021DX007)+1 种基金the Key R&D Plan of Shandong Province(2020CXGC010105)the China Postdoctoral Science Foundation(2021M700315).
文摘Quantum key distribution(QKD),rooted in quantum mechanics,offers information-theoretic security.However,practi-cal systems open security threats due to imperfections,notably bright-light blinding attacks targeting single-photon detectors.Here,we propose a concise,robust defense strategy for protecting single-photon detectors in QKD systems against blinding attacks.Our strategy uses a dual approach:detecting the bias current of the avalanche photodiode(APD)to defend against con-tinuous-wave blinding attacks,and monitoring the avalanche amplitude to protect against pulsed blinding attacks.By integrat-ing these two branches,the proposed solution effectively identifies and mitigates a wide range of bright light injection attempts,significantly enhancing the resilience of QKD systems against various bright-light blinding attacks.This method forti-fies the safeguards of quantum communications and offers a crucial contribution to the field of quantum information security.
基金supported by the Strategic Priority Program on Space Science,the Chinese Academy of Sciences,grant Nos.XDA15360102,XDA15360300 and E02212A02Sthe National Natural Science Foundation of China(Project:12061131007)。
文摘The Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor(GECAM)mission is designed to monitor the Gamma-Ray Bursts(GRBs)associated with gravitational waves and other high-energy transient sources.The mission consists of two microsatellites which are planned to operate at the opposite sides of the Earth.Each GECAM satellite could detect and localize GRBs in about 8 keV-5 MeV with its 25 Gamma-Ray Detectors(GRDs).In this work,we report the in-flight energy calibration of GRDs using the characteristic gamma-ray lines in the background spectra,and show their performance evolution during the commissioning phase.Besides,a preliminary cross-calibration of energy response with Fermi GBM data is also presented,validating the energy response of GRDs.
基金funded by the China National Space Administration(CNSA)the Macao Foundationsupported by the Science and Technology Development Fund(FDCT)of Macao(Grant Nos.0014/2022/A1,SKL-LPS(MUST)-20212023,0034/2024/AMJ)。
文摘The Solar X-ray Detector(SXD)on-board the Macao Science Satellite-1B(MSS-1B)was successfully launched via the Chinese Long March-2C rocket on 21 May 2023,and commenced operations in early June of the same year.The MSS-1B/Soft X-ray Detection Units(SXDUs)employ two silicon drift detectors(SDDs),providing a wide range of energy spectra spanning from 0.7 to 24 keV.Notably,the SXDUs deliver a high-resolution capability of 0.14 keV@5.9 keV and operate with a time cadence of 1 second.Here,we perform thorough calibrations of the MSS-1B/SXDUs,employing a combination of ground experiments and simulations.In addition,quantitative analysis comparing the flux measurements obtained by the MSS-1B/SXDUs to the data collected by the Geostationary Operational Environmental Satellite(GOES),provides compelling evidence of their consistency.Furthermore,the preliminary spectral analysis results showcase the robustness and expected performance of the MSS-1B/SXDUs,unlocking their potential for facilitating the study of dynamic evolution of solar flares.Moreover,the innovative MSS-1B/Solar X-ray Detector facilitates concurrent observations of solar soft and hard X-rays,thereby making valuable contributions to the advancements in solar research.
基金Jiangsu Planned Projects for Postdoctoral ResearchFunds(No0602037B)the Natural Science Foundation of Higher Edu-cation Institutions of Jiangsu Province (No05KJB150016)+1 种基金the Nation-al Natural Science Foundation of China (No50377005)the Fund ofJiangsu University (No06JDG015)
文摘The fluorine-containing organic polymer was synthesized from 3, 3', 4, 4'-Bisphenyltetracarboxylic (BPDA), and 2,2-Bis (3-amino-4-hydroxyyphenyl) hexafluoropropane (6FHP). It is a first-step preparation of a preimided hydroxy-containing polyimide, followed by the covalent bonding of an active chromophore, dispersed red 19 (DR19), onto the backbone of the polyimide via the Mitsunobu reaction. The nonlinear optical (NLO) containing polyimide was synthesized. The differential scanning calorimeter (DSC)and thermal gravimetric analysis (TGA) exhibited Tg and the temperature Tg at which 5 % mass losses occurring of polymer were 248 and 309 ℃, respectively. A reflective electro-optic (EO) modulator using this polymer was fabricated. The optical nonlinearities were determined to be d33 = 5. 209×10^-9 esu (poling voltage of 3.6 kV, 205 ℃) and d33 =7. 418×10^-9esu (poling voltage of 3. 8 kV, 210 ℃) by the second harmonic generation method in in-situ condition at a fundamental wavelength of 1 064 nm. The EO coefficients 733 of the polymer layer in the EO modulator were determined to be 2. 182 pm/V (poling voltage of 3.6 kV, 205 ℃) and 3. 107 pm/V (poling voltage of 3.8 kV, 210 ℃) at 1064 nm by an attenuated-total-reflection (ATR) method.
文摘We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOl). Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
文摘A Mach-Zehnder(MZ) electro-optic(EO) modulator are real iz ed,with three optical layers as polymer materials.The functional layer is the co rona poled crosslinkable polyurethane.The ridge waveguide is fabricated by using the spin-coating,poling,photolithography and oxygen reactive ion etching(RIE) techniques.The mode and the modulation properties of these devices are demonstra ted in a micron control system,while the light source works at the wavelength of 1 31 or 1 55 micron.
文摘After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.
文摘A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy. Unlike a common MZ interferometer, all the components are connected via polarization-maintaining fibers. At the same time, a polarized DFB laser with a maximum power output of 10mW is adopted as the light source to induce a large extinction ratio. Here,we take it to determine the electro-optical coefficients of a very thin superlattice structure with GaAs, KTP, and GaN as comparative samples. The measured EO coefficients show good comparability with the others.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400904)the National Natural Science Foundation for Distinguished Young Scholars,China(Grant No.61725403)+5 种基金the National Natural Science Foundation of China(Grant Nos.61574142,61322406,61704171,and 11705206)the Key Program of International Partnership Program of the Chinese Academy of Sciences(Grant No.181722KYSB20160015)the Special Project for Inter-government Collaboration of State Key Research and Development Program,China(Grant No.2016YFE0118400)the Science and Technology Service Network Initiative of the Chinese Academy of Sciences,the Jilin Provincial Science&Technology Department,China(Grant No.20180201026GX)the Interdisciplinary Innovation Team of the Chinese Academy of Sciencesthe Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2015171)
文摘Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11675198,11875097,11975257,61774072,61574026,and 61971090)the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and2016YFB0400601)+2 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.DUT19LK45)the China Postdoctoral Science Foundation(Grant No.2016M591434)the Science and Technology Plan of Dalian City,China(Grant No.2018J12GX060).
文摘Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.
基金supported by the State Key Development Program for Basic Research of China (Nos. 2008CB717803, 2009GB107001,2007CB209903)the Research Fund for the Doctoral Program of Higher Education of China (No. 200610011023)National Natural Science Foundation of China (No. 10875002)
文摘An accurate energy calibration of a 5"× 2" BC501A liquid scintillator-based neutron detector by means of photon sources and the unfolding of pulse height spectra are described. The photon responses were measured with 22Na, 137Cs and 54Mn photon sources and simulated using the GRESP code, which was developed at the Physiknlisch Technische Bundesanstalt in Germany. Pulse height spectra produced by three different photon sources were employed to investigate the effects of the unfolding techniques. It was found that the four unfolding codes of the HEPRO and UMG3.3 packages, including GRAVEL, UNFANA, MIEKE and MAXED, performed well with the test spectra and produced generally consistent results. They could therefore be used to obtain neutron energy spectra in toknmak experiments.