Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence(EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.

Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investi-gated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research.

Blue-Green Electroluminescence of Free-Standing Diamond Thin Films

Blue-green electroluminescence has been observed in free-standing diamond films which were deposited by microwave plasma assisted CVD on silicon substrates.The electroluminescence device is driven by a 60 Hz power supply.The threshold voltage was about 112 V peak-to-peak.The electroluminescence spectrum at room temperature,showed a blue-green band with the peak centered at 485nm suggesting band A type emission.Electroluminescence was also observed at 77K.

Red Electroluminescence and Photoluminescence from Novel Binuclear Europium Complex with Squaric Acid Ligand

A novel binuclear europium P-diketone complex with squaric acid ligand was synthesized for the first time. Its structure was elucidated by IR, UV, and Elemental Analysis. Red light emitting diode (LED) was fabricated by using the novel europium complex as an emitting layer, tris(8-quinolinolate) aluminum (III) (Alq(3)) as an electron-transporting layer, N, N'-diphenyl-N, N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole-transporting layer. A cell structure of indium-tin-oxide/TPD/Eu-complex/Alq(3)/Mg: Ag was employed. Red electroluminescence was observed at room temperature with dc bias voltage of 2 V in this cell. 2 Red emission peaks at about 613 nm with maximum luminance of over 106 cd/m(2). Compared with the EL luminance from those europium complexes reported before, one from the Eu-complex is best in the same cells.

Synthesis,characterization,photoluminescence and electroluminescence properties of new 1,3,4-oxadiazole-containing rhenium(I)complex Re(CO)_3(Bphen)(PTOP)

A new 1,3,4-oxadiazole-contanining rhenium（I） complex, with the formula [Re（CO）a（Bphen）（PTOP）], （Bphen = bathophe- nardine, PTOP = 4-（5-p-tolyl-1,3, 4-oxadiazd-2-yl） pyridine）, is synthesized and characterized by elemental analysis, IR, 1H NMR, UV-vis and luminescence spectroscopy. The double-layer electroluminescence devices based on the Re（l） complex have been fabricated by spin-coating technique. The turn-on voltage, maximum efficiency, and brightness for green emission obtained from the devices are 9 V, 2.1 cd/A and 165 cd/m^2, respectively.

Mechanism of SrS∶Ce Thin Film Electroluminescence

Ｔｈｅｍｅｃｈａｎｉｓｍｏｆｅｘｃｉｔａｔｉｏｎａｎｄｅｍｉｓｉｏｎｆｏｒｔｈｉｎｆｉｌｍｅｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｃｅ（ＴＦＥＬ）ｈａｓｂｅｅｎｉｎｔｅｎｓｉｖｅｌｙｉｎｖｅｓｔｉｇａｔｅｄ．Ｏｎｅｉｓｄｉｓｃｒｅｔｅｌｕｍｉｎｅｓｃｅｎ...

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.

Doped Organic Electroluminescence from a Novel Rare Earth Complex Tb(3-metho)_3phen

A novel rare earth complex Tb(3 metho) 3phen was synthesized and characterized. The complex was doped into PVK to improve the conductivity and film forming property of Tb(3 metho) 3phen. A device with a structure of ITO/PVK∶Tb(3 metho) 3phen /Al was fabricated to study the electroluminescent properties of Tb(3 metho) 3phen. And the optoluminescent and AFM properties of this device were also studied, which proved the existence of energy transfer from PVK to Tb(3 metho) 3phen. As a result, a pure green emission with sharp spectral band at 547.5 nm was observed.

Research on Performance of ZnS∶TbF_3 Thin Film Electroluminescence Device

The electroluminescence of ZnS doped with terbium fluoride thin films prepared b y ra dio frequency magnetron sputtering method was reported. The characteristics of t h e ZnS∶TbF 3 thin film electroluminescence devices, such as film characteristi cs of the ZnS∶Tb active layer, substrate temperatures during magnetron sputteri ng and Tb concentration of the active layer, were systematically investigated. The results show that annealing can evidently improve the luminescence performance of the luminescence device.

Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

A GaN/Si nanoheterojunction is prepared through growing Ga N nanocrystallites（nc-GaN） on a silicon nanoporous pillar array（Si-NPA） by a chemical vapor deposition（CVD） technique at a relatively low temperature. The average size of nc-Ga N is determined to be ~10 nm. The spectral measurements disclose that the photoluminescence（PL） from GaN/SiNPA is composed of an ultraviolet（UV） band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence（EL）. The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of Ga N is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current（SCLC） model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.

White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices

An n-ZnO：A1/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying be- havior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm-485 nm （blue emission） and 570 nm-640 nm （yellow emission）. Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye.

Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers

A simplified n-ZnO/p-Si heterojunction has been prepared by growing n-type ZnO rods on p-type silicon wafer through the chemical wpour deposition method. The reflectance spectrum of the sample shows an independent absorption peak at 384 nm, which may be originated from the bound states at the junction. In the photoluminescence spectrum a new emission band is shown at 393 nm, besides the bandedge emission at 380nm. The electroluminescence spectrum of the n-ZnO/p-Si heterojunction shows a stable yellow luminescence band centred at 560 nm, which can be attributed to the emission from trapped states. Another kind of discrete ZnO rod has also been prepared on such silicon wafer and is encapsulated with carbonated polystyrene for electroluminescence detection. This composite structure shows a weak ultraviolet electroluminescence band at 395 nm and a yellow electroluminescence band. These data prove that surface modification which blocks the transverse movement of carriers between neighbouring nanorods plays important roles in the ultraviolet emission of ZnO nanorods. These findings are vital for future display device design.

Electroluminescence of double-doped diamond thin films

A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current （DC） power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m^-2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.

Green-Light Electroluminescence of Conjugated Copolymer Containing p-Phenylene-ethynylene and Oxadiazole

The title copolymer(PDEBO) was synthesized. The thermal characteristics of the polymer were determined by means of DSC and TGA, revealing that the polymer has a good thermal stability. The X-ray diffraction measurements of the thin films showed that the polymer is disorder. Electroluminescence(EL) in the green region of the spectrum with a maximum at 500 nm was observed from the polymer films sandwiched between indium-tin-oxide and an Al electrode.

Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature

Tensile-strained Ge/SiGe multiple quantum wells （MQWs） were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n＋-Si （001） substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed,

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

We report a lateral Ge-on-Si ridge waveguide light emitting diode （LED） grown by ultrahigh vacuum chemical vapor deposition （UHV-CVD）. Direct-bandgap electroluminescence （EL） of Ge waveguide under continuous current is observed at room temperature. The heat-enhancing luminescence and thermal radiation-induced superlinear increase of edge output optical power are found. The spontaneous emission and thermal radiation based on the generalized Planck radiation law are calculated and fit very well to the experimental results. The Ge waveguides with different lengths are studied and the shorter one shows stronger EL intensity.

Influence of Poly(methylmethacrylate) Dopant on Butadiene Derivative Electroluminescence

ＩｎｆｌｕｅｎｃｅｏｆＰｏｌｙ（ｍｅｔｈｙｌｍｅｔｈａｃｒｙｌａｔｅ）ＤｏｐａｎｔｏｎＢｕｔａｄｉｅｎｅＤｅｒｉｖａｔｉｖｅＥｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｃｅＷａｎｇＧｕａｎｇｍｉｎｇ１（王光明）ＷａｎｇＧｕａｎｇｍｉｎ２（王广民）ＹｕａｎＣｈｕ...

Photoluminescence and Electroluminescence Studies on Tb-Doped Silicon Rich Oxide Materials and Devices

Photoluminescence （PL） characteristics of Tb-doped silicon rich oxide （SRO） films prepared by DC-sputtering and post-annealing processes were studied. The silicon richness of the SRO film could be controlled by varying the sputtering power and oxygen concentration in the sputtering chamber. PL emission from the as-deposited sample was found to be composed of Th^3 ＋ intra 4f transition-related emission and the silicon nano particle-related broad bandwidth emission. Thermal annealing could significantly improve the material properties as well as the PL signals. PL properties depended strongly upon the annealing scheme and silicon richness. Annealing at high temperatures （900- 1050℃） enhanced Tbrelated emission and suppressed the silicon nano particle-related emission. For samples with different silicon richness, annealing at 950 ℃ was found to produce higher PL signals than at other temperatures. It was attributed more to lifetime quenching than to concentration quenching. Electroluminescent （EL） devices with a capacitor structure were fabricated, the optimized process condition for the EL device was found to be different from that of PL emission. Among the annealing schemes that were used, wet oxidation was found to improve device performance the most, whereas, dry oxidation was found to improve material property the most. Wet oxidation allowed the breakdown electrical field to increase significantly and to reach above 10 mV·cm^-1. The EL spectra showed a typical Th^3＋ emission, agreeing well with the PL spectra. The I-V measurements indicated that for 100 nm thick film, the Fowler-Nordheim tunneling started at an electrical field of around 6 mV·cm^-1 and the light emission became detectable at a current density of around 10-4 A·cm^-2 and higher. Strong electroluminescence light emission was detected when the electrical field was close to 10 mV·cm^-1.

Electroluminescence Based on Eu_(0.5)La_(0.5)(TTA)_3phen Doped Poly N-Vinylcarbazole

A novel rare earth complex Eu0 5La0.5 （TRA）3phen, displaying electroluminescent property, was synthesized, and monolayer and double-layer devices were fabricated by doping it into poly N-vinylcarbazole. The characteristics of these optimized devices were investigated, and the emitting mechanism was explained through the energy band diagram. Optimized double-layer devices with a turn-on voltage of 6.5 V were achieved. At the current density of 68.48 mA·cm^- 2, the maximum brightness and the current efficiency of the device reached 238.4 cd·m^-2 and 0.35 cd·A^-1, respectively.

Synthesis of Pyrazolines Used as Blue Organic Electroluminescence Materials

Three kinds of pyrazolines were designed and synthesized. Their structures were elucidated by IR, (HNMR)-H-1, MS, UV and elemental analysis. Their luminescent properties were determined, which indicated that they had strong blue fluorescent properties. One of them was designed to have good film formation. All the three kinds of pyrazolines can be used as blue organic electroluminescence materials (OELMs).