A novel red-emitting binuclear platinum complex (dfppy)2Pt2(C8OXT)2 was synthesized and characterized,in which dfppy represents 2-(4',6'-difluorophenyl)pyridinato unit and C8OXT is abbreviated for 5-(4-octylox...A novel red-emitting binuclear platinum complex (dfppy)2Pt2(C8OXT)2 was synthesized and characterized,in which dfppy represents 2-(4',6'-difluorophenyl)pyridinato unit and C8OXT is abbreviated for 5-(4-octyloxyphenyl)-1,3,4-oxadiazole-2-thiol as a bridging ancillary ligand.Its photophysical,electrochemical and electroluminescent characteristics were primarily studied.The made single-emissive-layer (SEL) polymer light-emitting devices using (dfppy)2Pt2(C8OXT)2 as emitter exhibited a saturated red emission peaked at 620nm.The best device performances were obtained in the device at 8wt% dopant concentration,with a maximum external quantum efficiency of 8.4%,a current efficiency of 4.2cd/A and brightness of 3228cd/m2.This work provides an effective approach to obtain high-efficiency red emission through construction of new binuclear platinum complex and its doped SEL devices.展开更多
An Electroluminescent device with PVK film doped with Eu(TTA) 3 Phen and PBD was fabricated. The device structure of glass substrate/indium tin oxide/PPV/PVK∶ Eu(TTA) 3 Phen∶PBD/Alq 3/Al was employed. A sharply...An Electroluminescent device with PVK film doped with Eu(TTA) 3 Phen and PBD was fabricated. The device structure of glass substrate/indium tin oxide/PPV/PVK∶ Eu(TTA) 3 Phen∶PBD/Alq 3/Al was employed. A sharply red electroluminescence with a maximum luminance of 56.8 cd/m 2 at 48 V was achieved.展开更多
Electroluminescent devices with PVK film doped with Eu(DBM)3(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)3-(phen):PBD/Alq3/Al was employed. The emissive layer...Electroluminescent devices with PVK film doped with Eu(DBM)3(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)3-(phen):PBD/Alq3/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m2 was achieved at 42 V.展开更多
基金supported by the National Natural Science Foundation of China(50973093,51273168,21202139)the Innovation Group Hunan Natural Science Foundation(12JJ7002)+2 种基金the Natural Science Foundation of Hunan(12JJ4019,11JJ3061)the Scientific Fundation of Hunan Provincial Education Department(10A119,11CY023,12B123)Postgraduate Science Foundation for Innovation in Hunan Province(CX2012B249)
文摘A novel red-emitting binuclear platinum complex (dfppy)2Pt2(C8OXT)2 was synthesized and characterized,in which dfppy represents 2-(4',6'-difluorophenyl)pyridinato unit and C8OXT is abbreviated for 5-(4-octyloxyphenyl)-1,3,4-oxadiazole-2-thiol as a bridging ancillary ligand.Its photophysical,electrochemical and electroluminescent characteristics were primarily studied.The made single-emissive-layer (SEL) polymer light-emitting devices using (dfppy)2Pt2(C8OXT)2 as emitter exhibited a saturated red emission peaked at 620nm.The best device performances were obtained in the device at 8wt% dopant concentration,with a maximum external quantum efficiency of 8.4%,a current efficiency of 4.2cd/A and brightness of 3228cd/m2.This work provides an effective approach to obtain high-efficiency red emission through construction of new binuclear platinum complex and its doped SEL devices.
文摘An Electroluminescent device with PVK film doped with Eu(TTA) 3 Phen and PBD was fabricated. The device structure of glass substrate/indium tin oxide/PPV/PVK∶ Eu(TTA) 3 Phen∶PBD/Alq 3/Al was employed. A sharply red electroluminescence with a maximum luminance of 56.8 cd/m 2 at 48 V was achieved.
基金Project supported by the National Committee of Sciences and Technology of China ((863-715-002-01307), CAS(KJ951-A1-501-01)), the National Natural Science Foundation of China and the Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of A
文摘Electroluminescent devices with PVK film doped with Eu(DBM)3(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)3-(phen):PBD/Alq3/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m2 was achieved at 42 V.
