Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared ...Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared to Mg : Ag cathode, the combination of the Mg : PTCDA layer and silver provided enhanced electron injection into tris (8- quinolinolato) aluminium. The device with 1 : 2 Mg : PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg : Ag cathode. The properties of Mg : PTCDA composites were studied as well.展开更多
Relativistic electron injections are one of the mechanisms of relativistic(≥0.5 MeV) electron enhancements in the Earth’s outer radiation belt. In this study, we present a statistical observation of 600 keV electron...Relativistic electron injections are one of the mechanisms of relativistic(≥0.5 MeV) electron enhancements in the Earth’s outer radiation belt. In this study, we present a statistical observation of 600 keV electron injections in the outer radiation belt by using data from the Van Allen Probes. On the basis of the characteristics of different injections, 600 keV electron injections in the outer radiation belt were divided into pulsed electron injections and nonpulsed electron injections. The 600 keV electron injections were observed at 4.5 < L <6.4 under the geomagnetic conditions of 450 nT < AE < 1,450 nT. An L of ~4.5 is an inward limit for 600 keV electron injections. Before the electron injections, a flux negative L shell gradient for ≤0.6 MeV electrons or low electron fluxes in the injected region were observed. For600 keV electron injections at different L shells, the source populations from the Earth’s plasma sheet were different. For 600 keV electron injections at higher L shells, the source populations were higher energy electrons(~200 keV at X ~–9 R_(E)), whereas the source populations for 600 keV electron injections at lower L shells were lower energy electrons(~80 keV at X ~–9 R_(E)). These results are important to further our understanding of electron injections and rapid enhancements of 600 keV electrons in the Earth’s outer radiation belt.展开更多
We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first...We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device's maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.展开更多
We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su Schrieffer Heeger (SSH) model with a nonadiabatic dynamics method...We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su Schrieffer Heeger (SSH) model with a nonadiabatic dynamics method. It is found that a match between the Fermi level of electrodes and the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of organic molecules can be greatly affected by the length of the organic chains, which has a great impact on electron injection. The correlation between oligomers and electrodes is found to open more efficient channels for electron injection as compared with that in polymer/electrode structures. For oligomer/electrode structures, we show that the Schottky barrier essentially does not affect the electron injection as the electrode work function is smaller than a critical value work-function electrode. For polymer/electrode structures This means that the Schottky barrier is pinned for a small we find that it is possible for the Fermi level of electrodes to be pinned to the polaronic level. The condition under which the Fermi level of electrodes exceeds the polaronic level of polymers is shown to not always lead to spontneous electron transfer from electrodes to polymers.展开更多
Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase th...Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.展开更多
The performance of polymer light emitting devices(PLEDs)based on polyvinyl carbazole(PVK)is improved by introducing a nanoscale interfacial thin layer,made of poly(ethylene oxide)(PEO),between the calcium cathode and ...The performance of polymer light emitting devices(PLEDs)based on polyvinyl carbazole(PVK)is improved by introducing a nanoscale interfacial thin layer,made of poly(ethylene oxide)(PEO),between the calcium cathode and the PVK emissive layer.It is believed that the PEO layer plays a key role in enhancing the device performance.In comparison to the device with Ca/Al as the cathode,the performance of the PLED with PEO/Ca/Al cathode,including the driving voltage,luminance efficiency is significantly improved.These improvements are attributed to the introduction of a thin layer of PEO that can lower the interfacial barrier and facilitate electron injection.展开更多
Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentiona...Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.展开更多
Introduction: Mechanism of male androgenic alopecia (MAGA) is complex and leads to an excessive hair shedding and decreased hair density. Oral, topical, and injectable autologous treatments demonstrate ability to stim...Introduction: Mechanism of male androgenic alopecia (MAGA) is complex and leads to an excessive hair shedding and decreased hair density. Oral, topical, and injectable autologous treatments demonstrate ability to stimulate hair re-growth, but the response is suboptimal or plateaus off. Synthetic combination of the peptide complex and hyaluronic acid (P-HA) demonstrated hair regrowth in alopecia patients. Electronically-operated pneumatic injections (EPI) generate micro-trauma in the dermis and under wound-healing conditions may enhance regeneration effect of P-HA. Methods: Subjects seeking improvement of their male pattern hair loss (Hamilton-Norwood type 2-4) received the P-HA treatments through EPI. The course included 4 treatments every two weeks over the 8-week period. In 6 months, the hair growth was assessed comparative to baseline by global clinical photography and digital phototrichograms. The treatment safety and tolerability were documented through the whole study period. Results: Twelve men (30-45 years old) completed the treatment course with high tolerability and without adverse events. Post-treatment assessment of the previously bald areas showed improved coverage on the clinical photographs. The phototrichograms demonstrated statistically significant increase in terminal hair density by 36%, cumulative hair thickness by 37%, and follicular units by 20%;all contributing to a 38% increase in cumulated hair density (all p Conclusion: Electronic pneumatic injections are well tolerated and can be safely used for the needle-free administration of the peptide-hyaluronic acid combination in MAGA therapy. We achieved significant hair re-densification in the balding scalp. The exact role of the EPI-induced impact in the hair re-growth mechanism remains to be ascertained. .展开更多
A direct injection low compression ratios diesel rotary engine is designed and studied to find the appropriate application of the electronic controlled high pressure common rail injection system. Current development f...A direct injection low compression ratios diesel rotary engine is designed and studied to find the appropriate application of the electronic controlled high pressure common rail injection system. Current development focuses on the applied fuel injection and ignition strategies, especially concerning the combustion configurations of injectors, ignition source, and combustion chamber. The prototype engine, equipped with Bosch common rail system and high performance electronic control unit (ECU), is designed correspondingly. Studies show that the integration of a common rail injection system and the main and pilot duel injectors configurations, assisted with glow plug ignition device and flexible ECU, represents a promising approach to improve the potential of the low compression ratios diesel rotary engine. Currently the engine can run at 6 kr · min^-1 steadily and the power is about 68 kW/(4 kr ·min^- 1).展开更多
We investigate theoretically the spectral shift of the high-order harmonic generation(HHG)in ZnO driven by a combined laser field by solving the two-band semiconductor Bloch equations(SBEs)in the velocity gauge.The co...We investigate theoretically the spectral shift of the high-order harmonic generation(HHG)in ZnO driven by a combined laser field by solving the two-band semiconductor Bloch equations(SBEs)in the velocity gauge.The combined laser field is synthesized by a fundamental laser pulse and its seventh-frequency laser pulse.When the seventh-frequency laser pulse is added to the rising or falling parts of the fundamental laser field,we find that the spectral blueshift or redshift appears,which is due to the unequal contribution of the rising and falling parts in the fundamental laser field to the harmonics.By analyzing the time-dependent conduction band population in k space,we found that,in addition to the tunneling ionization channel,there is also the resonant electron injection channels which is induced by the seventh-frequency laser pulse.The harmonics generated by the different channels show the spectral redshift or the spectral blueshift,respectively.Through analyzing the k-integrated transient conduction band population of the electrons from different channels,we found that if there is a certain delay in the process of the electron excitation,it will lead to the delay in the harmonic emission,which results in the spectral redshift of the harmonics.展开更多
The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)s...The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)stress,and the degradation mechanism is studied.Under the channel hot electron injection stress,the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer,and that under the gate dielectric of the device.The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress,which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel.However,because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel,the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT.The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.展开更多
In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport laye...In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.展开更多
The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors(HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT's reliability. It is obser...The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors(HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT's reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the Al Ga N barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the Al Ga N barrier layer by electrons injected from 2DEG channel.Furthermore, our results show that there are few new traps generated in the Al Ga N barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons.展开更多
Dielectric capacitors have a high power density,and are widely used in military and civilian life.The main problem lies in the serious deterioration of dielectric insulation performance at high temperatures.In this st...Dielectric capacitors have a high power density,and are widely used in military and civilian life.The main problem lies in the serious deterioration of dielectric insulation performance at high temperatures.In this study,a polycarbonate(PC)-based energy storage dielectric was designed with BN/SiO_(2)heterojunctions on its surface.Based on this structural design,a synergistic suppression of the carrier injection and transport was achieved,significantly improving the insulating properties of the polymer film.In particular,the composite film achieves optimal high-temperature energy-storage properties.The composite film can withstand an electric field intensity of 760 MV m^(-1)at 100℃and obtain an energy storage density of 8.32 J cm^(-3),while achieving a breakthrough energy storage performance even at 150℃(610 MV m^(-1),5.22 J cm^(-3)).Through adjustment of the heterojunction structure,free adjustment of the insulation performance of the material can be realized;this is of great significance for the optimization of the material properties.展开更多
Recent progress in dye-sensitized solar cells (DSC) research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorp...Recent progress in dye-sensitized solar cells (DSC) research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorption onto Ti02, ultrafast electron injection, hot-electron injection, multiple-exciton generation, and electron-hole recombination. Advanced exper- imental techniques and theoretical approaches are briefly summarized, and then progressive achievements in photovoltaic device optimization based on insights from atomic scale investigations are introduced. Finally, some challenges and oppor- tunities for further improvement of dye solar cells are presented.展开更多
The degradation of transconductance (G) of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped elect...The degradation of transconductance (G) of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped electrons located in the gate oxide over the LDD region (QL) makes the effective drain voltage diminish. Accordingly, the G peak in depletion (GMD) and that in weak inversion (GMw) decrease. It is found that △GMD and △GMw each have a linear relationship with the n-th power of stress time (tn) in a dual-log coordinate: △GMD octn, AGMD octn (n = 0.25). During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel (Qc). As a result, GMW only recovers to circa 50% of the initial value after the hole-injection-stress (HIS). Instead, GMD almost recovers. The relevant mechanisms are given in detail.展开更多
A solubility model for Merocyanine-540 dye together with the interface’s electron transfer kinetics of MC-540/TiO2 has been investigated(Merocyanine 540-based dye has been used effectively in dye-sensitized solar cel...A solubility model for Merocyanine-540 dye together with the interface’s electron transfer kinetics of MC-540/TiO2 has been investigated(Merocyanine 540-based dye has been used effectively in dye-sensitized solar cells).The highest absorption peaks were recorded at 489 nm and 493 nm in Water and Ethanol solvent,vs.the vacuum phase which yielded 495 nm(associated with a modest electron injection-free energy value(Ginj)of−2.34 eV for both Water and Ethanol solvents).The time-dependent density functional theory(TD-DFT)method approach has been applied in this simulation.Additionally,the electronic structure and simulated UV-Vis spectra of the dye in different solvents have been determined,and the alignment with the solar spectrum has been discussed to a certain extent.The energy level diagrams and electron density of the primary molecular orbitals are shown,and the major issues that have an impact on our new interface’s performance are examined.It is concluded that the proposed Solvation Model(SM)can improve the performance of Dye-Sensitized Solar Cells.展开更多
We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su–Schrieffer–Heeger (SSH) model with a nonadiabatic dynamics method...We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su–Schrieffer–Heeger (SSH) model with a nonadiabatic dynamics method. It is found that a match between the Fermi level of electrodes and the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of organic molecules can be greatly affected by the length of the organic chains, which has a great impact on electron injection. The correlation between oligomers and electrodes is found to open more efficient channels for electron injection as compared with that in polymer/electrode structures. For oligomer/electrode structures, we show that the Schottky barrier essentially does not affect the electron injection as the electrode work function is smaller than a critical value. This means that the Schottky barrier is pinned for a small work-function electrode. For polymer/electrode structures, we find that it is possible for the Fermi level of electrodes to be pinned to the polaronic level. The condition under which the Fermi level of electrodes exceeds the polaronic level of polymers is shown to not always lead to spontaneous electron transfer from electrodes to polymers.展开更多
Within the framework of a discrete model of the nuclei of linear and planar defects, the variational principles of sliding in translational and rotational plasticity, fracture by separation (cleavage) and shear (shear...Within the framework of a discrete model of the nuclei of linear and planar defects, the variational principles of sliding in translational and rotational plasticity, fracture by separation (cleavage) and shear (shearing) in crystalline materials are considered. The analysis of mass transfer fluxes near structural kinetic transitions of slip bands into cells, cells into fragments of deformation origin, destruction by separation and shear for fractal spaces using fractional Riemann-Liouville derivatives, local and global criteria of destruction is carried out. One of the possible schemes of the crack initiation and growth mechanism in metals is disclosed. It is shown that the discrete model of plasticity and fracture does not contradict the known dislocation models of fracture and makes it possible to abandon the kinetic concept of thermofluctuation rupture of interatomic bonds at low temperatures.展开更多
Photosensitization of TiO2 colloid by hypocrellin B (HB),a natural photodynamic pigment with extremely high photosta-bility,has been studied by surface enhanced Raman spec-troscopy (SERS),laser flash photolysis and el...Photosensitization of TiO2 colloid by hypocrellin B (HB),a natural photodynamic pigment with extremely high photosta-bility,has been studied by surface enhanced Raman spec-troscopy (SERS),laser flash photolysis and electron paramagnetic resonance (EPR) techniques.The photoseiisitization of TiO2 occurred practically from the excited triplet dye and the electron injection rate constant is 1.3×106 s-1.The influences of donor and acceptor on the electron injection were investigated.展开更多
文摘Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared to Mg : Ag cathode, the combination of the Mg : PTCDA layer and silver provided enhanced electron injection into tris (8- quinolinolato) aluminium. The device with 1 : 2 Mg : PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg : Ag cathode. The properties of Mg : PTCDA composites were studied as well.
基金supported by the National Natural Science Foundation of China under grant 41974188。
文摘Relativistic electron injections are one of the mechanisms of relativistic(≥0.5 MeV) electron enhancements in the Earth’s outer radiation belt. In this study, we present a statistical observation of 600 keV electron injections in the outer radiation belt by using data from the Van Allen Probes. On the basis of the characteristics of different injections, 600 keV electron injections in the outer radiation belt were divided into pulsed electron injections and nonpulsed electron injections. The 600 keV electron injections were observed at 4.5 < L <6.4 under the geomagnetic conditions of 450 nT < AE < 1,450 nT. An L of ~4.5 is an inward limit for 600 keV electron injections. Before the electron injections, a flux negative L shell gradient for ≤0.6 MeV electrons or low electron fluxes in the injected region were observed. For600 keV electron injections at different L shells, the source populations from the Earth’s plasma sheet were different. For 600 keV electron injections at higher L shells, the source populations were higher energy electrons(~200 keV at X ~–9 R_(E)), whereas the source populations for 600 keV electron injections at lower L shells were lower energy electrons(~80 keV at X ~–9 R_(E)). These results are important to further our understanding of electron injections and rapid enhancements of 600 keV electrons in the Earth’s outer radiation belt.
基金supported by the National Natural Science Foundation of China(Grant No.60906022)the Natural Science Foundation of Tianjin,China(Grant No.10JCYBJC01100)+2 种基金the Scientific Developing Foundation of Tianjin Education Commission,China(Grant No.2011ZD02)the Key Science and Technology Support Program of Tianjin,China(Grant No.14ZCZDGX00006)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device's maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 20974101 and 21174135)
文摘We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su Schrieffer Heeger (SSH) model with a nonadiabatic dynamics method. It is found that a match between the Fermi level of electrodes and the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of organic molecules can be greatly affected by the length of the organic chains, which has a great impact on electron injection. The correlation between oligomers and electrodes is found to open more efficient channels for electron injection as compared with that in polymer/electrode structures. For oligomer/electrode structures, we show that the Schottky barrier essentially does not affect the electron injection as the electrode work function is smaller than a critical value work-function electrode. For polymer/electrode structures This means that the Schottky barrier is pinned for a small we find that it is possible for the Fermi level of electrodes to be pinned to the polaronic level. The condition under which the Fermi level of electrodes exceeds the polaronic level of polymers is shown to not always lead to spontneous electron transfer from electrodes to polymers.
基金supported by the National Natural Science Foundation of China(Grant Nos.61905086,62174067,62175085)Science and Technology Development Planning of Jilin Province(Project Nos.20190101024JH,20200201296JC)+1 种基金the Hong Kong Scholars Program(Project No.XJ2020028)grants from the Research Grants Council of the Hong Kong Special Administrative Region,China(Project Nos.11300418 and 11300419).
文摘Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.
基金the Office of R&D,National Cheng Kung University,Taiwan
文摘The performance of polymer light emitting devices(PLEDs)based on polyvinyl carbazole(PVK)is improved by introducing a nanoscale interfacial thin layer,made of poly(ethylene oxide)(PEO),between the calcium cathode and the PVK emissive layer.It is believed that the PEO layer plays a key role in enhancing the device performance.In comparison to the device with Ca/Al as the cathode,the performance of the PLED with PEO/Ca/Al cathode,including the driving voltage,luminance efficiency is significantly improved.These improvements are attributed to the introduction of a thin layer of PEO that can lower the interfacial barrier and facilitate electron injection.
基金supported by the National Natural Science Foundation of China(Grant No.61376109)the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202)
文摘Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.
文摘Introduction: Mechanism of male androgenic alopecia (MAGA) is complex and leads to an excessive hair shedding and decreased hair density. Oral, topical, and injectable autologous treatments demonstrate ability to stimulate hair re-growth, but the response is suboptimal or plateaus off. Synthetic combination of the peptide complex and hyaluronic acid (P-HA) demonstrated hair regrowth in alopecia patients. Electronically-operated pneumatic injections (EPI) generate micro-trauma in the dermis and under wound-healing conditions may enhance regeneration effect of P-HA. Methods: Subjects seeking improvement of their male pattern hair loss (Hamilton-Norwood type 2-4) received the P-HA treatments through EPI. The course included 4 treatments every two weeks over the 8-week period. In 6 months, the hair growth was assessed comparative to baseline by global clinical photography and digital phototrichograms. The treatment safety and tolerability were documented through the whole study period. Results: Twelve men (30-45 years old) completed the treatment course with high tolerability and without adverse events. Post-treatment assessment of the previously bald areas showed improved coverage on the clinical photographs. The phototrichograms demonstrated statistically significant increase in terminal hair density by 36%, cumulative hair thickness by 37%, and follicular units by 20%;all contributing to a 38% increase in cumulated hair density (all p Conclusion: Electronic pneumatic injections are well tolerated and can be safely used for the needle-free administration of the peptide-hyaluronic acid combination in MAGA therapy. We achieved significant hair re-densification in the balding scalp. The exact role of the EPI-induced impact in the hair re-growth mechanism remains to be ascertained. .
基金This project is supported by the Commission of Science Technology and Industry for National Defense, China(No.MKPT-02-291).
文摘A direct injection low compression ratios diesel rotary engine is designed and studied to find the appropriate application of the electronic controlled high pressure common rail injection system. Current development focuses on the applied fuel injection and ignition strategies, especially concerning the combustion configurations of injectors, ignition source, and combustion chamber. The prototype engine, equipped with Bosch common rail system and high performance electronic control unit (ECU), is designed correspondingly. Studies show that the integration of a common rail injection system and the main and pilot duel injectors configurations, assisted with glow plug ignition device and flexible ECU, represents a promising approach to improve the potential of the low compression ratios diesel rotary engine. Currently the engine can run at 6 kr · min^-1 steadily and the power is about 68 kW/(4 kr ·min^- 1).
基金the National Natural Science Foundation of China(Grant Nos.12074142 and 11904122).
文摘We investigate theoretically the spectral shift of the high-order harmonic generation(HHG)in ZnO driven by a combined laser field by solving the two-band semiconductor Bloch equations(SBEs)in the velocity gauge.The combined laser field is synthesized by a fundamental laser pulse and its seventh-frequency laser pulse.When the seventh-frequency laser pulse is added to the rising or falling parts of the fundamental laser field,we find that the spectral blueshift or redshift appears,which is due to the unequal contribution of the rising and falling parts in the fundamental laser field to the harmonics.By analyzing the time-dependent conduction band population in k space,we found that,in addition to the tunneling ionization channel,there is also the resonant electron injection channels which is induced by the seventh-frequency laser pulse.The harmonics generated by the different channels show the spectral redshift or the spectral blueshift,respectively.Through analyzing the k-integrated transient conduction band population of the electrons from different channels,we found that if there is a certain delay in the process of the electron excitation,it will lead to the delay in the harmonic emission,which results in the spectral redshift of the harmonics.
基金the Laboratory Open Fund of Beijing Smart-chip Microelectronics Technology Co.Ltd and the National Natural Science Foundation of China(Grant No.11690042)+1 种基金the Science Challenge Project,China(Grant Nos.TZ2018004 and 12035019)the National Major Scientific Research Instrument Projects,China(Grant No.61727804)。
文摘The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)stress,and the degradation mechanism is studied.Under the channel hot electron injection stress,the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer,and that under the gate dielectric of the device.The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress,which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel.However,because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel,the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT.The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.
基金Project supported by the National Key R&D Program of China(Grant Nos.2016YFB0401702 and 2017YFE0120400)the National Natural Science Foundation of China(Grant Nos.62005114,62005115,and 61875082)+5 种基金Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2019B010925001 and 2019B010924001)Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting(Grant No.2017KSYS007)Natural Science Foundation of Guangdong Province,China(Grant No.2017B030306010)Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2019A1515110437)Shenzhen Peacock Team Project(Grant No.KQTD2016030111203005)High Level University Fund of Guangdong Province,China(Grant No.G02236004).
文摘In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61474091)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Grant No.ZHD201206)+1 种基金the New Experiment Development Funds for Xidian University,China(Grant No.SY1213)the Scientific Research Foundation for the Returned Overseas Chinese Scholars
文摘The degradation mechanism of enhancement-mode Al Ga N/Ga N high electron mobility transistors(HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT's reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the Al Ga N barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the Al Ga N barrier layer by electrons injected from 2DEG channel.Furthermore, our results show that there are few new traps generated in the Al Ga N barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons.
基金This research was funded by the National Natural Science Foundation of China(No.U20A20308,52177017,and 51977050)Natural Science Foundation of Heilongjiang Province of China(No.YQ2021E036 and ZD2020E009)+3 种基金China Postdoctoral Science Foundation(No.2020T130156)Heilongjiang Postdoctoral Financial Assistance(No.LBHZ18098)Fundamental Research Foundation for Universities of Heilongjiang Province(No.2019-KYYWF-0207 and 2018-KYYWF-1624)University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province(UNPYSCT-2020177).
文摘Dielectric capacitors have a high power density,and are widely used in military and civilian life.The main problem lies in the serious deterioration of dielectric insulation performance at high temperatures.In this study,a polycarbonate(PC)-based energy storage dielectric was designed with BN/SiO_(2)heterojunctions on its surface.Based on this structural design,a synergistic suppression of the carrier injection and transport was achieved,significantly improving the insulating properties of the polymer film.In particular,the composite film achieves optimal high-temperature energy-storage properties.The composite film can withstand an electric field intensity of 760 MV m^(-1)at 100℃and obtain an energy storage density of 8.32 J cm^(-3),while achieving a breakthrough energy storage performance even at 150℃(610 MV m^(-1),5.22 J cm^(-3)).Through adjustment of the heterojunction structure,free adjustment of the insulation performance of the material can be realized;this is of great significance for the optimization of the material properties.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11222431 and 11074287)the National Basic Key Research Program of China(Grant No.2012CB921403)the Hundred-Talent Program of the Chinese Academy of Sciences
文摘Recent progress in dye-sensitized solar cells (DSC) research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorption onto Ti02, ultrafast electron injection, hot-electron injection, multiple-exciton generation, and electron-hole recombination. Advanced exper- imental techniques and theoretical approaches are briefly summarized, and then progressive achievements in photovoltaic device optimization based on insights from atomic scale investigations are introduced. Finally, some challenges and oppor- tunities for further improvement of dye solar cells are presented.
基金Project supported by the Shaanxi Provincial Research Project of Education Department,China (Grant No. 11JK0902)the Xi’an Municipal Applied Materials Innovation Fund,China (Grant No. XA-AM-201012)
文摘The degradation of transconductance (G) of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped electrons located in the gate oxide over the LDD region (QL) makes the effective drain voltage diminish. Accordingly, the G peak in depletion (GMD) and that in weak inversion (GMw) decrease. It is found that △GMD and △GMw each have a linear relationship with the n-th power of stress time (tn) in a dual-log coordinate: △GMD octn, AGMD octn (n = 0.25). During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel (Qc). As a result, GMW only recovers to circa 50% of the initial value after the hole-injection-stress (HIS). Instead, GMD almost recovers. The relevant mechanisms are given in detail.
基金Financial support for this work by the Natural Sciences and Engineering Research Council of Canada(NSERC),Grant No.RGPIN-2020-07016,Canada’s Federal Funding Agency for University-Based Research and Student Training is acknowledged.
文摘A solubility model for Merocyanine-540 dye together with the interface’s electron transfer kinetics of MC-540/TiO2 has been investigated(Merocyanine 540-based dye has been used effectively in dye-sensitized solar cells).The highest absorption peaks were recorded at 489 nm and 493 nm in Water and Ethanol solvent,vs.the vacuum phase which yielded 495 nm(associated with a modest electron injection-free energy value(Ginj)of−2.34 eV for both Water and Ethanol solvents).The time-dependent density functional theory(TD-DFT)method approach has been applied in this simulation.Additionally,the electronic structure and simulated UV-Vis spectra of the dye in different solvents have been determined,and the alignment with the solar spectrum has been discussed to a certain extent.The energy level diagrams and electron density of the primary molecular orbitals are shown,and the major issues that have an impact on our new interface’s performance are examined.It is concluded that the proposed Solvation Model(SM)can improve the performance of Dye-Sensitized Solar Cells.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 20974101 and 21174135)
文摘We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su–Schrieffer–Heeger (SSH) model with a nonadiabatic dynamics method. It is found that a match between the Fermi level of electrodes and the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of organic molecules can be greatly affected by the length of the organic chains, which has a great impact on electron injection. The correlation between oligomers and electrodes is found to open more efficient channels for electron injection as compared with that in polymer/electrode structures. For oligomer/electrode structures, we show that the Schottky barrier essentially does not affect the electron injection as the electrode work function is smaller than a critical value. This means that the Schottky barrier is pinned for a small work-function electrode. For polymer/electrode structures, we find that it is possible for the Fermi level of electrodes to be pinned to the polaronic level. The condition under which the Fermi level of electrodes exceeds the polaronic level of polymers is shown to not always lead to spontaneous electron transfer from electrodes to polymers.
文摘Within the framework of a discrete model of the nuclei of linear and planar defects, the variational principles of sliding in translational and rotational plasticity, fracture by separation (cleavage) and shear (shearing) in crystalline materials are considered. The analysis of mass transfer fluxes near structural kinetic transitions of slip bands into cells, cells into fragments of deformation origin, destruction by separation and shear for fractal spaces using fractional Riemann-Liouville derivatives, local and global criteria of destruction is carried out. One of the possible schemes of the crack initiation and growth mechanism in metals is disclosed. It is shown that the discrete model of plasticity and fracture does not contradict the known dislocation models of fracture and makes it possible to abandon the kinetic concept of thermofluctuation rupture of interatomic bonds at low temperatures.
基金Project (Nos. 29872038, 29772035) supported by the National Natural Science Foundation of China
文摘Photosensitization of TiO2 colloid by hypocrellin B (HB),a natural photodynamic pigment with extremely high photosta-bility,has been studied by surface enhanced Raman spec-troscopy (SERS),laser flash photolysis and electron paramagnetic resonance (EPR) techniques.The photoseiisitization of TiO2 occurred practically from the excited triplet dye and the electron injection rate constant is 1.3×106 s-1.The influences of donor and acceptor on the electron injection were investigated.