Calculations of energies and absolute intensities of Auger electrons and X-rays arising from electron capture decay

Calculations of energies and absolute intensities of Auger electron and X-ray arising from electron cap- ture are introduced briefly. The calculation codes and main process are also presented. The application is also given by taking 55Fe ε decay as an example.

Surface Analysis of ZIRLO Alloy Implanted with Carbon

ZIRLO alloy specimens were implanted with carbon ions with fluence range from 1×10 16 to 1×10 18ions·cm -2, using a MEVVA source at an extraction voltage of 40 kV at maximum temperature of 380 ℃. The surfaces of the implanted samples were then analyzed and the TRIM 96 computer code was used to simulate the depth distribution of carbon. The valences of elements in the implanted surface of ZIRLO alloy were analyzed by X-ray photoemission spectroscopy (XPS); and then the depth distributions of the elements on the surface of the samples were obtained by Auger electron spectroscopy (AES). Scanning electron microscopy (SEM) was used to examine the micro-morphology of implanted samples. Glancing angle X-ray diffraction (GAXRD) at 0.30 incident angles was employed to examine the phase transformations of implanted samples. It shows that the as-received ZIRLO alloy is mainly composed of hexagonal alpha zirconium, as for implanted samples, there appeared hexagonal zirconia (H-ZrO_ 0.35) and sigma zirconium carbide (δ-Zr_3C_2), and the δ-Zr_3C_2 increased when increasing the fluence. When the fluence reached 1×10 18 ions·cm -2, the concentration of δ-Zr_3C_2 is the maximum in all the samples. The micro-morphology of implanted samples are similar, there are many pits with diameters ranging from 1 to 3 μm on the implanted surfaces.

Study the Characteristics of Titanium Oxide Hydrogen Ion Sensor Using XRD and AES

We study the extended gate ion sensitive structure,and deposit the titanium oxide (TiO_2) thin film on p-type (100) silicon substrate.The device of the hydrogen ion sensing structure is TiO_2/Si-substrate,and a commercial device of the metal oxide semiconductor field effect transistor (MOSFET) is connected to the separative sensing device.The sensitivity and linearity are measured under different work pressures.When the mixed ratio of Ar/O_2 is 80 ml·min^(-1)/20 ml·min^(-1),the work pressure is 4 Pa,the sputtering power is 150 W,and the sputtering time is two hours,the better sensing properties of the sensitivity and linearity are 36.49 mV/pH and 0.99654,respectively.However,some instruments are analyzed the surface of TiO_2 membrane,such as X-ray diffraction (XRD) and Auger Electron Spectrometer (AES).The characteristics of TiO_2 thin film can be demonstrated.

Influence of Aluminum Ions Implantation on Corrosion Behavior of Zircaloy-2 Alloy in 1 M H_2SO_4

The specimens were implanted with aluminum ions with fluence ranging from 1× 10^16 to 1× 10^17 ions/cm^2 to study the effect of aluminum ion implantation on the aqueous corrosion behavior of zircaloy-2 by metal vapor vacuum arc source （MEVVA） at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy （XPS） and Auger electron spectroscopy （AES）, respectively. Transmission electron microscopy （TEM） was used to examine the microstructure of the aluminum-implanted samples. Glancing angle X-ray diffraction （GAXRD） was employed to examine the phase transformation due to the aluminum ion implantation. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zircaloy-2 in a 1 M H2SO4 solution. It is found that a significant improvement was achieved in the aqueous corrosion resistance of zircaloy-2 implanted with aluminum ions. Finally, the mechanism of the corrosion behavior of aluminum- implanted zircaloy-2 was discussed.

Effect of copper ions implantation on the corrosion behavior of ZIRLO alloy in 1 mol/L H_2SO_4

In order to study the effect of copper ion implantation on the aqueous corrosion behavior of ZIRLO alloy, specimens were implanted with copper ions with fluences ranging from 1×10^16 to 1×10^ ions/cm^2, using a metal vapor vacuum arc source （MEVVA） at an extraction voltage of 40 kV, The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy （XPS） and Auger electron spectroscopy （AES）, respectively. Glancing angle X-ray diffraction （GAXRD） was employed to examine the phase transformation due to the copper ion implantation. The potcntiodynamic polarization technique was used to evaluate the aqueous corrosion resistance of implanted ZIRLO alloy in a 1 mol/L H2SO4 solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of ZIRLO alloy implanted with copper ions when the fluence is 5×10^16 ions/cm^2. When the fluence is 1×10^16 or 1×10^17 ions/cm^2, the corrosion resistance of implanted sanaples was bad. Finally, the mechanism of the corrosion behavior of copper-implanted ZIRLO alloy was discussed.

伴随电子俘获衰变的俄歇电子能量及强度计算

简要介绍了伴随电子俘获衰变的俄歇电子能量与强度的计算方法、计算程序与工作流程,并以^(55)Feε衰变为例说明其具体应用。

Chemical composition and Mott-Schottky analysis of passive film formed on G3 alloy in bicarbonate/carbonate buffer solution

The chemical composition and semi-conductive properties of passive film on nickel- based alloy （G3 alloy） in bicarbonate/carbonate buffer solution were investigated by Auger electron spectroscopy （AES）, X-ray photoelectron spectroscopy （XPS）, elec- trochemical impedance spectra （EIS） and Mott-Schottky plot. AES and XPS results showed that the passive film appeared double-layer structure, in which the inner film was composed of nickel oxide, the mixed nickel-chromium-molybdenum-manganese oxides were the major component of the outer film. The electrochemical results revealed that the factors including frequency, potential, time, temperature and pH value can affect the semi-conductive property, the doping densities decreased with increasing potential and pH value, prolonging time and decreasing temperature. According to the above results, it can be concluded that the film protection on the substrate was enhanced with increasing potential and pH value, prolonging time and decreasing temperature.

Studies on Surface Modification of Metals by Ion Beam Mixing Implanting With Plasma Source Ion Implantation

Ion implantation, as currently practiced, has been shown to be quite effective in production of semiconductor and integrated circuit as well as surface modification of metal. But it is a line-of-sight process and if the target is non-planar, target manipulation, such as translation or rotation, is required to implant all sides of the target. Even with sophisticated target manipulation system, the performance of beam-line implantor is still limited by the retained dose problem,, i.e. the maximum dose retained by the target is governed by the angle of incidence of the beam. In order to achieve reasonable dose uniformity on targets with curved surfaces, target masking may be employed to restrict the ion beam angle of incidence. Even though the target has sufficient symmetry to accommodate masking, the masking degrades the system performance, and furthermore, sputtering of the masking contaminates the target.