Quantitative Analysis of Zero and High Order Laue Zones Effects on the Exit Wave Function

The exit wave function including zero and high order Laue zones has been simulated by both multi-slice method and electron dynamic diffraction analytical expression. Coincidence of the simulations by these two methods was achieved. The calculated results showed that the exit wave function highly dominated by zero order Laue zone, while high order ones modify the exit wave function to some extent depending on the situation. High order Laue zone effects become important for the following cases: sample consists of light elements, the thickness is very thin, lattice planar spacing perpendicular to the direction of the incident beam is large, and the electron beam has long wavelength. In these cases the exit wave function should be corrected by adding high order Laue zone effects. The analytical expression is effective and convenient for dealing with high order Laue zone effects.

SiC_f/Ti-6Al-4V基复合材料界面晶格常数变化的CBED研究

本实验采用会聚束电子衍射(CBED)方法,研究3种不同状态SiCf/Ti-6Al-4V复合材料界面附近α-Ti晶粒的晶格常数变化。结果表明:在纤维-基体界面区域,靠近界面处晶格常数变化较大,随距界面反应层距离增大,晶格常数的变化趋近缓慢。有C涂层SiC纤维制成的复合材料中晶格常数变化比无C涂层复合材料晶格常数变化小。相比制备态复合材料,热暴露无C涂层SiCf/Ti-6Al-4V复合材料界面处,晶格常数变化较为缓和。