Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.

Distribution of electron traps in SiO_2/HfO_2 nMOSFET

In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO_2 layer have been extracted. Two peaks are observed, which are located at ？E ^-1.0 eV and-1.43 eV, respectively. It is found that the former one is close to the SiO_2/HfO_2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO_2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment,and reliability improvement for advanced semiconductor devices.

Lifetime measurement of the 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)at an electron beam ion trap

An experimental measurement of the lifetime of 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)is reported in this work.The Mo^(15+)ions are produced and trapped in an electron beam ion trap with a magnetic field of 0.65 T.The decay photons emitted from 3d^(9) ^(2)D_(3/2) level are subsequently recorded via a cooled photomultiplier tube.Through meticulous scrutiny of potential systematic uncertainties affecting the measurement outcomes,we have determined the lifetime of Mo^(15+)3d^(9)2D_(3/2)metastable level to be 2.83(22)ms.The experimental result provides a clear distinguishment from existing calculations based on various theoretical approaches.

The influence of trapping centres on the photoelectron decay in silver halide

Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.

Damping of Geodesic Acoustic Mode by Trapped Electrons

We study the Landau resonance between geodesic acoustic mode（GAM） and trapped electrons as a GAM’s collisionless damping. The assumption of ˉωde 〈〈ωbeis adopted.The damping rate induced by trapped electrons is found to be an increasing function of q. In low q range, circulating-ion-induced damping rate is larger than that induced by trapped electrons.As q increases, the latter becomes larger than the former. The reason is that trapped electrons’ resonant velocity is close to vtefrom the lower side, whiles circulating ions’ resonant velocity gets bigger further from vti. So the number of resonant trapped electrons increases, whiles the number of resonant circulating ions decreases. The amplitude of damping rate induced by trapped electrons in the edge plasma can be comparable to that induced by circulating ions in the low q range.Another phenomenon we found is that in the chosen range of, the damping caused by trapped electrons has a maximum value at point εq for different q. The reason is that as is close to q,trapped electorns’ resonant velocity is close to vte.

Effects of trapped electrons on the ion temperature gradient mode in tokamak plasmas with hollow density profiles

The ion temperature gradient(ITG)mode in the presence of impurity ions and trapped electrons(TEs)is numerically investigated in tokamak plasmas with hollow density profiles,using the gyrokinetic integral eigenmode equation.It is found that in the inverted density plasma,the increase of the ITG enhances the growth rate and frequency of the ITG,and the density gradient plays an important role in the ITG modes.For weak density gradient situations,the trapped electron effects increase the instability of the ITG,while the impurity has an obviously stabilizing effect.For the strong density gradient cases,both the impurities and trapped electrons enhance the ITG instabilities.In addition,it is shown that the growth rate of the ITG decreases with positive magnetic shear s while the real frequency increases with positive magnetic shear.The growth rate of the ITG increases with negative magnetic shear s while the real frequency decreases with negative magnetic shear.The length of the calculated mode structure in the positive and negative magnetic shear intervals is also presented.

Nonlinear Dust Acoustic Waves in a Magnetized Dusty Plasma with Trapped and Superthermal Electrons

In this work, the effects of superthermal and trapped electrons on the oblique propa- gation of nonlinear dust-acoustic waves in a magnetized dusty （complex） plasma are investigated. The dynamic of electrons is simulated by the generalized Lorentzian （k） distribution function （DF）. The dust grains are cold and their dynamics are simulated by hydrodynamic equations. Using the standard reductive perturbation technique （RPT） a nonlinear modified Korteweg-de Vries （mKdV） equation is derived. Two types of solitary waves; fast and slow dust acoustic solitons, exist in this plasma. Calculations reveal that compressive solitary structures are likely to propagate in this plasma where dust grains are negatively （or positively） charged. The properties of dust acoustic solitons （DASs） are also investigated numerically.

Observation of trapped and passing runaway electrons by infrared camera in the EAST tokamak

In EAST,synchrotron radiation is emitted by runaway electrons in the infrared band,which can be observed by infrared cameras.This synchrotron radiation is mainly emitted by passing runaway electrons with tens of MeV energy.A common feature of radiation dominated by passing runaway electrons is that it is strongest on the high field side.However,the deeply trapped runaway electrons cannot reach the high field side in principle.Therefore,in this case,the high field side radiation is expected to be weak.This paper reports for the first time that the synchrotron radiation from trapped runaway electrons dominates that from passing runaway electrons and is identifiable in an image.Although the synchrotron radiation dominated by trapped runaway electrons can be observed in experiment,the proportion of trapped runaway electrons is very low.

Effects of trapped electrons on off-axis lower hybrid current drive in tokamaks

The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.

K-shell excitation dielectronic recombination resonance strengths of highly charged Helike to O-like Xe ions

Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn （n=L, M, N and O） DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases.

Schamel equation in an inhomogeneous magnetized sheared flow plasma with q-nonextensive trapped electrons

An investigation is carried out for understanding the properties of ion–acoustic（IA） solitary waves in an inhomogeneous magnetized electron-ion plasma with field-aligned sheared flow under the impact of q-nonextensive trapped electrons. The Schamel equation and its stationary solution in the form of solitary waves are obtained for this inhomogeneous plasma. It is shown that the amplitude of IA solitary waves increases with higher trapping efficiency（β）, while the width remains almost the same. Further, it is found that the amplitude of the solitary waves decreases with enhanced normalized drift speed, shear flow parameter and the population of the energetic particles. The size of the nonlinear solitary structures is calculated to be a few hundred meters and it is pointed out that the present results are useful to understand the solar wind plasma.

Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al2O3 Nanocomposite Films Based on IDC and SAXS

The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.

Characteristics of dust acoustic waves in dissipative dusty plasma in the presence of trapped electrons

The formation and propagation of nonlinear dust acoustic waves（DAWs） as solitary and solitary/shock waves in an unmagnetized, homogeneous, dissipative and collisionless dusty plasma comprising negatively charged micron sized dust grains in the presence of free and trapped electrons with singly charged non-thermal positive ions is discussed in detail. The evolution characteristics of the solitary and shock waves are studied by deriving a modified Korteweg–de Vries–Burgers（mKdV–Burgers） equation using the reductive perturbation method. The mKdV–Burgers equation is solved considering the presence（absence） of dissipation. In the absence of dissipation the system admits a solitary wave solution, whereas in the presence of dissipation the system admits shock waves（both monotonic and oscillatory） as well as a combination of solitary and shock wave solutions. Standard methods of solving the evolution equation of shock（solitary） waves are used. The results are discussed numerically using standard values of plasma parameters. The findings may be useful for better understanding of formation and propagation of waves in astrophysical plasma.

Quasi-coherent mode in core plasma of SUNIST spherical tokamak

A quasi-coherent(QC)mode was observed in the core region of low-density ohmic plasmas in Sino-UNIted Spherical Tokamak.In experiments on the QC mode,two sets of moveable Langmuir probes(LPs)were used to measure the local parameters including floating potential,electron temperature,electron density,and so on,as well as their profiles.To monitor the magnetohydrodynamic activities,a Mirnov probe was used to measure the poloidal magnetic fluctuation.The QC mode can be seen in the spectra of floating potential,but there is no similar peak in the spectra of magnetic fluctuation.Thus,the QC mode is probably electrostatic.By analyzing the electrostatic potential fluctuations from the LPs,the features of the QC mode including frequency,wavenumber,propagation direction,and dependence on collisionality are identified,which are consistent with the characteristics of dissipative trapped electron mode.

Influence of La^(3+) and Dy^(3+) on the properties of the long afterglow phosphor CaAl_2O_4: Eu^(2+), Nd^(3+)

The long afterglow phosphor CaAl2O4： Eu^2＋, Nd^3＋ was prepared by the high temperature solid-state reaction method, and the influence of La^3＋ and Dy^3＋ on the properties of the long afterglow phosphor was studied by X-ray diffiaction （XRD）, photoluminescence （PL）, and thermoluminescence （TL）. The XRD pattem shows the host phase of CaAl2O4 is produced and no impurity phase appears. The peak wavelength of the phosphor does not vary with La^3＋ and Dy^3＋ doping. It implies that the crystal field, which affects the 5d electron states of Eu^2＋, is not changed dramatically after doping of La^3＋ and Dy^3＋. The TL spectra indicate that the phosphor doped with La^3＋ or Dy^3＋ produces different depths of trap energy level. In the mechanism of long afterglow luminescence, it is considered that La^3＋ or Dy^3＋ works as trap energy level. The decay time lies on the number of electrons in the trap energy level and the rate of the electrons returning to the excitation level.

Research on the radiation hardened SOI devices with single-step Si ion implantation

Silicon-on-insulator（SOI） devices are sensitive to the total ionizing dose effect due to the existence of buried oxide.In this paper,an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal–oxide–semiconductor transistor（CMOS） process is used to harden the SOI wafer.The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods.The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly.The metastable electron traps introduced by Si implantation is also investigated by electrical stress.The results show that these traps are very instable,and electrons will tunnel into or out of the metastable electron traps quickly after hot-electroninjection or hot-hole-injection.

Colour Centres and Energy Transfer in BaF_(2-x)Cl_x∶Eu^(2+) Phosphors

The optical absorption spectra of BaF2-x Clx ：Eu^2＋ after ultraviolet （UV） light excitation were investigated. The differences between the absorption spectra after and before excitation （DAS） were observed. The DAS increase at both the high and the low energy side of F band in BaF2-xClx ： Eu^2 ＋ after 245 nm UV light excitation. The bleach effect of UV light and the absorption of electrons in the valence band may account for the former and the formation of Fa centres （association of F（Cl^-） centres）, whose absorption band matches the HeNe laser better, may explain the latter. In the write-in process, the transfer of electrons is via tunneling, In the readout process, the transfer of electrons captured in F（F^-） and Fa centres is more likely via tunneling, and that of F（Cl^- ） centres is more likely via conduction band.

A New Promising X-Ray Storage Phosphor BaBrCl∶Eu^(2+)

Photostimulated luminescence was observed in X-ray irradiated BaBrCl doped with Eu^2 ＋ . It shows an emission band that peak at 413 nm, and two difference absorption spectra （DAS） bands that peak at - 550 nm and 675 nm respectively. The stimulation energy is lower than that of BaFX：Eu^2＋ （X = Cl, Br）, and matches the cheaper, more portable, and more convenient semiconductor laser better. The results indicate that BaBrCl ： Eu^2＋ shows positive potential as a promising X-ray storage phosphor for practical utilization.

Energy distribution extraction of negative charges responsible for positive bias temperature instability

A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of n MOSFET during positive bias temperature instability（PBTI） stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy,and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.

Photostimulated Luminescence and Optical Storage in Eu ^(2+)-Doped Fluoride-Oxide Glass Ceramics

Photostimulated luminescence (PSL) phenomenon was observed in a fluoride-oxide glass ceramics doped with Eu 2+. When the UV light irradiated glass ceramic was stimulated by a longer wavelength light, PSL at 447 nm due to the 5d-4f transition of Eu 2+ was observed. The PSl excitation band peaking at 543 nm is due to the electron trap centers which are located either in the Eu 2+-doped crystallites or in the glass; where exactly they are located in is not yet known. The optical storage properties of this kind of glass ceramic were also studied. By comparing with the investigations on PSL phosphor Eu 2+ doped alkali halides, PSL mechanism in glass ceramics which is still an open question and has to be investigated in further experiments was explained.