Focused ion-beam-induced deposition （FIBID） and focused electron-beam-induced deposition （FEBID） are conve- nient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum prec...Focused ion-beam-induced deposition （FIBID） and focused electron-beam-induced deposition （FEBID） are conve- nient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the con- ductive lines directly written by focused ion-beam （FIB） and focused electron-beam （FEB） are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 ℃ for 30 min enhances the platinum content values from ~ 18% to 30% and ~ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current-voltage curve shows the Coulomb blockade effect.展开更多
We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems.Nanodots obtained from fixed electron beam irradi...We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems.Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend,with precursor concentrations from pure Si Cl4to 0%SiC l4in CH2Cl2,and electron beam intensity ranges of two orders of magnitude,showing good controllability of the deposition.Secondary electrons contributed to the determination of the lateral sizes of the nanostructures,while the primary beam appeared to have an effect in reducing the vertical growth rate.These results can be used to generate donut-shaped nanostructures.Using a scanning electron beam,line structures with both branched and unbranched morphologies were also obtained.The liquid-phase electron-beaminduced deposition technology is shown to be an effective tool for advanced nanostructured material generation.展开更多
基金Project supported by the Research Project of National University of Defense Technology,China(Grant No.JC13-02-14)the National Natural Science Foundation of China(Grant No.11104349)
文摘Focused ion-beam-induced deposition （FIBID） and focused electron-beam-induced deposition （FEBID） are conve- nient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the con- ductive lines directly written by focused ion-beam （FIB） and focused electron-beam （FEB） are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 ℃ for 30 min enhances the platinum content values from ~ 18% to 30% and ~ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current-voltage curve shows the Coulomb blockade effect.
基金supported by the U.S.Department of Energy under grants DE-FG02-07ER46453 and DEFG02-07ER46471supports from the Shanghai Leading Academic Discipline Project(B502)+4 种基金the Shanghai Key Laboratory Project(08DZ2230500)the Science and Technology Commission of Shanghai Municipality(11nm0507000)the State Key Laboratory of Functional Materials for Informatics Open Project(SKL201306)the Shanghai Pujiang Program(13PJ1401700)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry are highly acknowledged
文摘We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems.Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend,with precursor concentrations from pure Si Cl4to 0%SiC l4in CH2Cl2,and electron beam intensity ranges of two orders of magnitude,showing good controllability of the deposition.Secondary electrons contributed to the determination of the lateral sizes of the nanostructures,while the primary beam appeared to have an effect in reducing the vertical growth rate.These results can be used to generate donut-shaped nanostructures.Using a scanning electron beam,line structures with both branched and unbranched morphologies were also obtained.The liquid-phase electron-beaminduced deposition technology is shown to be an effective tool for advanced nanostructured material generation.
