Research on Silicon Carbide Dispersion-Reinforced Hypereutectic Aluminum-Silicon Electronic Packaging Materials

The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon electronic packaging materials to meet the needs of aviation,aerospace,and electronic packaging fields.We used the powder metallurgy method and high-temperature hot pressing technology to prepare SiC/Al-Si composite materials with different SiC contents(5vol%,10vol%,15vol%,and 20vol%).The results showed that as the SiC content increased,the tensile strength of the composite material first increased and then decreased.The tensile strength was the highest when the SiC content was 15%;the sintering temperature significantly affected the composite material’s structural density and mechanical properties.Findings indicated 700℃was the optimal sintering and the optimal SiC content of SiC/Al-Si composite materials was between 10%and 15%.Besides,the sintering temperature should be strictly controlled to improve the material’s structural density and mechanical properties.

Literature Review of Electronic Packaging Technology and Residual Stress

The rapid development of the electronic information industry brings to the irreplaceable role of electronic components, therefore the search of a more reliable packaging material has become increasingly important. In the electronic packaging system, the failure phenomenon caused by residual stress is one of the key factors restricting the development of electronic packaging technology. In order to use the in-situ characterization technology to explore the residual stress inducing mechanism and failure mechanism of epoxy-based advanced packaging materials, this paper gives a review of related previous research, and lays a theoretical foundation for the upcoming research. The classification and generation mechanism of residual stress are clarified in this paper, which provides data support for future related research.

Effects of rolling and annealing on microstructures and properties of Cu/Invar electronic packaging composites prepared by powder metallurgy

The Cu/Invar composites of 40% Cu were prepared by powder metallurgy, and the composites were rolled with 70% reduction and subsequently annealed at 750 ℃. Phases, microstructures and properties of the composites were then studied. After that, the amount of a-Fe（Ni,Co） in the composites is reduced, because a-Fe（Ni,Co） partly transfers into y-Fe（Ni,Co） through the diffusion of the Ni atoms into a-Fe（Ni,Co） from Cu. When the rolling reduction is less than 40%, the deformation of Cu takes place, resulting in the movement of the Invar particles and the seaming of the pores. When the rolling reduction is in the range from 40% to 60%, the deformations of Invar and Cu occur simultaneously to form a streamline structure. After rolling till 70% and subsequent annealing, the Cu/Invar composites have fine comprehensive properties with a relative density of 98.6%, a tensile strength of 360 MPa, an elongation rate of 50%, a thermal conductivity of 25.42 W/（m.K） （as-tested） and a CTE of 10.79× 10-6/K （20-100 ℃）.

Microstructure and properties of Cu matrix composites reinforced with surface-modified Kovar particles

The thermal conductivity of Cu/Kovar composites was improved by suppressing element diffusion at the interfaces through the formation of FeWO_(4)coating on the Kovar particles via vacuum deposition.Cu matrix composites reinforced with unmodified(Cu/Kovar)and modified Kovar(Cu/Kovar@)particles were prepared by hot pressing.The results demonstrate that the interfaces of Cu/FeWO_(4)and FeWO_(4)/Kovar in the Cu/Kovar@composites exhibit strong bonding,and no secondary phase is generated.The presence of FeWO_(4)impedes interfacial diffusion within the composite,resulting in an increase in grain size and a decrease in dislocation density.After surface modification of the Kovar particle,the thermal conductivity of Cu/Kovar@composite is increased by 110%from 40.6 to 85.6 W·m^(-1)·K^(-1).Moreover,the thermal expansion coefficient of the Cu/Kovar@composite is 9.8×10^(-6)K^(-1),meeting the electronic packaging requirements.

Preparation,crystallization,and wetting of ZnO-Al_2O_3-B_2O_3-SiO_2 glass-ceramics for sealing to Kovar

A novel type of ZnO-Al2O3-B2O3-SiO2 glass-ceramics sealing to Kovar in electronic packaging was developed, whose thermal expansion coefficient and electrical resistance are 5.2× 10^-6/℃ and over 1×10^13 Ω·cm, respectively. The major crystalline phases in the glass-ceramic seals were ZnAl2O4, ZnB2O4, and NaSiAl2O4. The dielectric resistance of the glass-ceramic could be remarkably enhanced through the control of alkali metal ions into crystal lattices. It was found that crystallization happened first on the surface of the sample, leaving the amorphous phase in the inner, which made the glass suitable for sealing. The glass-ceramic showed better wetting on the Kovar surface, and sealing atmosphere and temperature had great effect on the wetting angle. Strong interracial bonding was obtained, which was mainly attributed to the interracial reaction between SiO2 and FeO or Fe3O4.