Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular...Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular switch. The molecule comprises the switch which can exhibit different chiralities, that is, cis-form and trans-form by ultraviolet or visible irradiation. The results clearly reveal that the switching behaviors can be realized when the molecule converts between cis-form and trans-form. ~urthermore, the on-off ratio can be modulated by the chirality of the carbon nanotube electrodes. The maximum on-off ratio can reach 109 at 0.4 V for the armchair junction, suggesting potential applications of this type of junctions in future design of functional molecular devices.展开更多
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is ...We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot (-1.8 nm). This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.展开更多
High Te superconductor (HTS) technology has been used to develop a unique high Q resonant circuit. Such circuit or device has some special characteristics such as very high voltage generation. Theoretical study and ...High Te superconductor (HTS) technology has been used to develop a unique high Q resonant circuit. Such circuit or device has some special characteristics such as very high voltage generation. Theoretical study and experimental approaches have proceeded for the concept verification. This paper presents the theory about this high Q resonant circuit. The operation principle of the circuit is described. A practical prototype for HTS high voltage generation is also demonstrated. The experiment result shows that very high voltages can be achieved by the developed method using HTS technology.展开更多
High temperature superconducting (HTS) power inductor and its control technology have been studied and analyzed in the paper. Based on the results of simulations and practical experiments, a controlled release schem...High temperature superconducting (HTS) power inductor and its control technology have been studied and analyzed in the paper. Based on the results of simulations and practical experiments, a controlled release scheme has been proposed and verified for developing a practical HTS SMES prototype.展开更多
To achieve wide-range, high-integration, and real-time performance on the neutron flux measurement on the HL-2A tokamak, a digital neutron flux measuring(DNFM) system based on the peripheral component interconnectio...To achieve wide-range, high-integration, and real-time performance on the neutron flux measurement on the HL-2A tokamak, a digital neutron flux measuring(DNFM) system based on the peripheral component interconnection(PCI) e Xtension for Instrumentation express(PXIe) bus was designed.This system comprises a charge-sensitive preamplifier and a field programmable gate array(FPGA)-based main electronics plug-in. The DNFM totally covers source-range and intermediate-range neutron flux measurements, and increases system integration by a large margin through joining the pulse-counting mode and Campbell mode. Meanwhile, the neutron flux estimation method based on pulse piling proportions is able to choose and switch measuring modes in accordance with current flux, and this ensures the accuracy of measurements when the neutron flux changes suddenly. It has been demonstrated by simulated signals that the DNFM enhances the full-scale measuring range up to 1.9×10^8cm^-2s^-1, with relative error below 6.1%. The DNFM has been verified to provide a high temporal sensitivity at 10 ms time intervals on a single fission chamber on HL-2A.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 11004156the Natural Science Foundation of Shaanxi Province under Grant No 2014JM1025+2 种基金the Science and Technology Star Project of Shaanxi Province under Grant No2016KJXX-38the Special Foundation of Key Academic Subjects Development of Shaanxi Province under Grant No 2008-169the Xi'an Polytechnic University Young Scholar Supporting Plan under Grant No 2013-06
文摘Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular switch. The molecule comprises the switch which can exhibit different chiralities, that is, cis-form and trans-form by ultraviolet or visible irradiation. The results clearly reveal that the switching behaviors can be realized when the molecule converts between cis-form and trans-form. ~urthermore, the on-off ratio can be modulated by the chirality of the carbon nanotube electrodes. The maximum on-off ratio can reach 109 at 0.4 V for the armchair junction, suggesting potential applications of this type of junctions in future design of functional molecular devices.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303200the National Natural Science Foundation of China under Grant Nos U1732273,U1732159,91421109,91622115,11522432,11574217 and 61774133the Natural Science Foundation of Jiangsu Province under Grant No BK20160659
文摘We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot (-1.8 nm). This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.
文摘High Te superconductor (HTS) technology has been used to develop a unique high Q resonant circuit. Such circuit or device has some special characteristics such as very high voltage generation. Theoretical study and experimental approaches have proceeded for the concept verification. This paper presents the theory about this high Q resonant circuit. The operation principle of the circuit is described. A practical prototype for HTS high voltage generation is also demonstrated. The experiment result shows that very high voltages can be achieved by the developed method using HTS technology.
文摘High temperature superconducting (HTS) power inductor and its control technology have been studied and analyzed in the paper. Based on the results of simulations and practical experiments, a controlled release scheme has been proposed and verified for developing a practical HTS SMES prototype.
基金support by the HL-2A experimental teamsupported by National Natural Science Foundation of China(Nos.11375195,11575184)National Magnetic Confinement Fusion Energy Development Research(No.2013GB104003)
文摘To achieve wide-range, high-integration, and real-time performance on the neutron flux measurement on the HL-2A tokamak, a digital neutron flux measuring(DNFM) system based on the peripheral component interconnection(PCI) e Xtension for Instrumentation express(PXIe) bus was designed.This system comprises a charge-sensitive preamplifier and a field programmable gate array(FPGA)-based main electronics plug-in. The DNFM totally covers source-range and intermediate-range neutron flux measurements, and increases system integration by a large margin through joining the pulse-counting mode and Campbell mode. Meanwhile, the neutron flux estimation method based on pulse piling proportions is able to choose and switch measuring modes in accordance with current flux, and this ensures the accuracy of measurements when the neutron flux changes suddenly. It has been demonstrated by simulated signals that the DNFM enhances the full-scale measuring range up to 1.9×10^8cm^-2s^-1, with relative error below 6.1%. The DNFM has been verified to provide a high temporal sensitivity at 10 ms time intervals on a single fission chamber on HL-2A.