Red sensitive (Cu, In) doped CdS of high moisture-resistance was reported to have been prepared from heat-treatment of CdS with CuSO<sub>4</sub> and In<sub>2</sub> (SO<sub>4</sub>...Red sensitive (Cu, In) doped CdS of high moisture-resistance was reported to have been prepared from heat-treatment of CdS with CuSO<sub>4</sub> and In<sub>2</sub> (SO<sub>4</sub>)<sub>3</sub> in the presence of NaCl-CdCl<sub>2</sub> flux in high proportion (CdS: mixed flux ≤2: 1). In this work a new red sensitive and also strongly moisture-resistant (Cu, Bi) doped CdS polycrystalline semiconductor was successfully prepared by first admixing the substrate CdS powder with appropriate quantity of BiOCl in addition to CuCl<sub>2</sub> and then heat-treating with NaCl-CdCl<sub>2</sub>展开更多
The interfaces and interface electron states in Mylar/Al/UCL/CGL/CTL multi-layered photoreceptor are discussed. The interface electron states between CGL and CTL in sample A efficiently accelerated photogeneration car...The interfaces and interface electron states in Mylar/Al/UCL/CGL/CTL multi-layered photoreceptor are discussed. The interface electron states between CGL and CTL in sample A efficiently accelerated photogeneration carrier transport processes to bring about a lower V-r value and higher light sensitivity than sample B. The process might be interpreted as a kind of assistance sensitization effect based on interfacial electron states in the high fields; that is to say, the interface electron states between CGL and CTL accelerated carriers injection from CGL into the gap states of CTL, and followed by the interface electron states modulated transport processes of carriers in the CTL.展开更多
文摘Red sensitive (Cu, In) doped CdS of high moisture-resistance was reported to have been prepared from heat-treatment of CdS with CuSO<sub>4</sub> and In<sub>2</sub> (SO<sub>4</sub>)<sub>3</sub> in the presence of NaCl-CdCl<sub>2</sub> flux in high proportion (CdS: mixed flux ≤2: 1). In this work a new red sensitive and also strongly moisture-resistant (Cu, Bi) doped CdS polycrystalline semiconductor was successfully prepared by first admixing the substrate CdS powder with appropriate quantity of BiOCl in addition to CuCl<sub>2</sub> and then heat-treating with NaCl-CdCl<sub>2</sub>
文摘The interfaces and interface electron states in Mylar/Al/UCL/CGL/CTL multi-layered photoreceptor are discussed. The interface electron states between CGL and CTL in sample A efficiently accelerated photogeneration carrier transport processes to bring about a lower V-r value and higher light sensitivity than sample B. The process might be interpreted as a kind of assistance sensitization effect based on interfacial electron states in the high fields; that is to say, the interface electron states between CGL and CTL accelerated carriers injection from CGL into the gap states of CTL, and followed by the interface electron states modulated transport processes of carriers in the CTL.