Finite element analysis on factors influencing the clamping force in an electrostatic chuck

As one of the core components of IC manufacturing equipment, the electrostatic chuck （ESC） has been widely applied in semiconductor processing such as etching, PVD and CVD. The clamping force of the ESC is one of the most important technical indicators. A multi-physics simulation software COMSOL is used to analyze the factors influencing the clamping force. The curves between the clamping force and the main parameters such as DC voltage, electrode thickness, electrode radius, dielectric thickness and helium gap are obtained. Moreover, the effects of these factors on the clamping force are investigated by means oforthogonal experiments. The results show that the factors can be ranked in order of voltage, electrode radius, helium gap and dielectric thickness according to their importance, which may offer certain reference for the design of ESCs.

A novel measuring method of clamping force for electrostatic chuck in semiconductor devices

Electrostatic chucks are one of the core components of semiconductor devices. As a key index of electrostatic chucks, the clamping force must be controlled within a reasonable range. Therefore, it is essential to accurately measure the clamping force. To reduce the negative factors influencing measurement precision and repeatability, this article presents a novel method to measure the clamping force and we elaborate both the principle and the key procedure. A micro-force probe component is introduced to monitor, adjust, and eliminate the gap between the wafer and the electrostatic chuck. The contact force between the ruby probe and the wafer is selected as an important parameter to characterize de-chucking, and we have found that the moment of de-chucking can be exactly judged. Moreover, this article derives the formula calibrating equivalent action area of backside gas pressure under real working conditions, which can effectively connect the backside gas pressure at the moment of de-chucking and the clamping force. The experiments were then performed on a self-designed measuring platform.The de-chucking mechanism is discussed in light of our analysis of the experimental data. Determination criteria for de-chucking point are summed up. It is found that the relationship between de-chucking pressure and applied voltage conforms well to quadratic equation. Meanwhile, the result reveals that actual de-chucking behavior is much more complicated than the description given in the classical empirical formula.

Design space of electrostatic chuck in etching chamber

One of the core semiconductor devices is the electrostatic chuck. It has been widely used in plasma- based and vacuum-based semiconductor processing. The electrostatic chuck plays an important role in adsorbing and cooling/heating wafers, and has technical advantages on non-edge exclusion, high reliability, wafer planarity, particles reduction and so on. This article extracts key design elements from the existing knowledge and techniques of electrostatic chuck by the method proposed by Paul and Beitz, and establishes a design space systematically. The design space is composed of working objects, working principles and working structures. The working objects in- volve electrostatic chuck components and materials, classifications, and relevant properties; the working principles involve clamping force, residual force, and temperature control; the working structures describe how to compose an electrostatic chuck and to fulfill the overall functions. The systematic design space exhibits the main issues during electrostatic chuck design. The design space will facilitate and inspire designers to improve the design quality and shorten the design time in the conceptual design.