New Ideas and Strategies for Eliminating Obstacles to the Integration of Industry and Education in Vocational Education

The integration of industry and education in vocational education is related to the direction of vocational education reform and thequality of personnel training. Nowadays, there are institutional obstacles to the integration of industry and education in VocationalEducation in China in terms of government power boundary, governance system, governance model, safeguard measures andenvironmental atmosphere. Therefore, the author makes an analysis and Discussion on the new ideas and strategies for eliminatingthe obstacles to the integration of industry and education in Vocational education. The study found that during the social transitionperiod, the survival and development of vocational and technical education became crucial. And the results of the research showthat the integration of production and education in vocational education is an inevitable requirement for the establishment of amodern vocational education system. It is not an activity under the administrative instruction, but an inherent requirement for thedevelopment of vocational education.

The effect of substrate holder size on the electric field and discharge plasma on diamond-film formation at high deposition rates during MPCVD

The effect of the substrate holder feature dimensions on plasma density（ne）, power density（Qmw） and gas temperature（T） of a discharge marginal plasma（a plasma caused by marginal discharge） and homogeneous plasma were investigated for the microwave plasma chemical vapor deposition process. Our simulations show that decreasing the dimensions of the substrate holder in a radical direction and increasing its dimension in the direction of the axis helps to produce marginally inhomogeneous plasma. When the marginal discharge appears, the maximum plasma density and power density appear at the edge of the substrate. The gas temperature increases until a marginally inhomogeneous plasma develops. The marginally inhomogeneous plasma can be avoided using a movable substrate holder that can tune the plasma density, power density and gas temperature. It can also ensure that the power density and electron density are as high as possible with uniform distribution of plasma. Moreover, both inhomogeneous and homogeneous diamond films were prepared using a new substrate holder with a diameter of 30 mm. The observation of inhomogeneous diamond films indicates that the marginal discharge can limit the deposition rate in the central part of the diamond film. The successfully produced homogeneous diamond films show that by using a substrate holder it is possible to deposit diamond film at 7.2 μm h^（–1）at 2.5 kW microwave power.