The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to ...The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.展开更多
The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric fi...The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period （1 2 nm to 3.3 nm）, and then increases a little when the gate oxide becomes thinner and thinner （3.3 nm to 1.8 nm）.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.12004329)Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(Grant No.SKLIPR2115)+1 种基金Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant No.SJCX22_1704)Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University,China(Grant Nos.YZ202026301 and YZ202026306)。
文摘The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.
文摘The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period （1 2 nm to 3.3 nm）, and then increases a little when the gate oxide becomes thinner and thinner （3.3 nm to 1.8 nm）.
