Modification of Nano-α-Al2O3 and Its Influence on the Surface Properties of Waterborne Polyurethane Resin Composite Passivation Films

Silane coupling agent KH560 was used to modify the surface of nano-α-Al2O3 in ethanol-aqueous solution with different proportions. The particle size of nano-α-Al2O3 was determined by nano-particle size analyzer, and the effects of nano-α-Al2O3 content, ethanol-aqueous solution ratio and KH560 dosage on the dispersion and particle size of nano-α-Al2O3 were investigated. The material structure before and after modification was determined by Fourier transform infrared spectroscopy (FTIR). Aqueous polyurethane resin and inorganic components are combined with modified nano-α-Al2O3 dispersion to form chromium-free passivation solution. The solution is coated on the galvanized sheet, the adhesion and surface hardness are tested, the bonding strength of the coating and the surface hardness of the substrate are discussed. The corrosion resistance and surface morphology of the matrix were investigated by electrochemical test, neutral salt spray test and scanning electron microscope test. The chromium-free passivation film formed after the modification of nano-α-Al2O3 increases the surface hardness of galvanized sheet by about 85%. The corrosion resistance of the film is better than that of a single polyurethane film. The results show that the surface hardness and corrosion resistance of polyurethane resin composite passivation film are significantly improved by the introduction of nano-α-Al2O3.

Al掺杂对β-Ga_(2)O_(3)薄膜光学性质的影响研究

近年来,半导体器件向着高散热性、高击穿场强和低能耗的方向发展,因此超宽禁带半导体材料β-Ga_(2)O_(3)具有广阔的应用前景,而有效掺杂是实现β-Ga_(2)O_(3)器件的基础。实验采用磁控溅射法制备Ga_(2)O_(3)/Al/Ga_(2)O_(3)/Al/Ga_(2)O_(3)复合结构,经高温退火使Al原子热扩散进入薄膜中,形成Al掺杂的β-Ga_(2)O_(3)薄膜。采用激光区熔法使薄膜区域熔化再结晶,进一步提升掺杂质量。对Al掺杂β-Ga_(2)O_(3)薄膜的晶体性质、杂质含量及光学性质进行了测试表征。结果表明:Al掺杂不改变β-Ga_(2)O_(3)薄膜的晶体结构;随着Al层溅射时间延长,掺杂含量逐渐增加;当Al溅射时间为5和10 s时,薄膜紫外吸收率分别为40%和50%;随着Al溅射时间的增加,Al掺杂β-Ga_(2)O_(3)薄膜紫外区域光吸收率逐渐增强,Al溅射时间为300 s时,β-Ga_(2)O_(3)薄膜的光吸收率接近90%;低浓度的Al掺杂会导致β-Ga_(2)O_(3)薄膜的禁带宽度变窄。

Self-repairing Al_(2)O_(3)-TiO_(2)coatings fabricated through plasma electrolytic oxidation with various cathodic pulse parameters

The influence of cathodic pulse parameters was evaluated on plasma electrolytic oxidation(PEO)coatings grown on 7075 aluminum alloy in a silicate-based electrolyte containing potassium titanyl oxalate(PTO)using pulsed bipolar waveforms with various cathodic duty cycles and cathodic current densities.The coatings were characterized by SEM,EDS,and XRD.EIS was applied to investigate the electrochemical properties.It was observed that the increase of cathodic duty cycle and cathodic current density from 20%and 6 A/dm^(2) to 40%and 12 A/dm^(2) enhances the growth rate of the inner layer from 0.22 to 0.75μm/min.Adding PTO into the bath showed a fortifying effect on influence of the cathodic pulse and the mentioned change of cathodic pulse parameters,resulting in an increase of the inner layer growth rate from 0.25 to 1.10μm/min.Based on EDS analysis,Si and Ti were incorporated dominantly in the upper parts of the coatings.XRD technique merely detectedγ-Al_(2)O_(3),and there were no detectable peaks related to Ti and Si compounds.However,the EIS results confirmed that the incorporation of Ti^(4+)into alumina changed the electronic properties of the coating.The coatings obtained from the bath containing PTO using the bipolar waveforms with a cathodic duty cycle of 40%and current density values higher than 6 A/dm^(2) showed highly appropriate electrochemical behavior during 240 d of immersion due to an efficient repairing mechanism.Regarding the effects of studied parameters on the coating properties,the roles of cathodic pulse parameters and PTO in the PEO process were highlighted.

Al_(2)O_(3)在储能材料中的应用研究进展

Al_(2)O_(3)作为陶瓷材料、催化剂、催化剂载体及研磨磨料等有广泛的应用。因氧化铝具有优良的抗酸碱腐蚀性和力学等性能且热稳定性好、来源丰富,所以近年来逐渐开始应用在储能材料领域,进一步拓展了氧化铝的应用范围。主要针对氧化铝包覆后的二次储能电池正极材料、负极材料,以及改进隔膜的力学性能等方面进行研究。报道了近年来氧化铝在锂离子电池、钠离子电池、锂硫电池、电解液、隔膜方面的应用研究进展。

纳米TiO_(2)对NH_(3)-H_(2)O-LiBr工质降膜吸收性能的影响

为了探讨纳米TiO_(2)对三元NH_(3)-H_(2)O-LiBr工质降膜吸收的影响,本文利用数值分析建立了三元工作流体薄膜吸收的连续方程、能量方程和组分质量平衡方程,采用Matlab软件进行编程和计算纳米流体的降膜吸收性能,将其与实验数据进行对比验证,并进一步分析了纳米TiO_(2)质量分数、初始氨浓度、初始温度、冷却水进口温度、吸收压力和下降薄膜管长度对薄膜吸收性能的影响。研究表明:添加纳米TiO_(2)可以增强降膜吸收的传质速率,主要原因为液膜中氨的扩散系数增加。当纳米TiO_(2)质量分数从0%增加到0.1%、0.3%和0.5%时,扩散系数分别增加了3.44倍、6.42倍和11.76倍。此外,增加初始氨浓度、降低初始温度、提高冷却水进口温度或降低吸收压力都可以提高最终溶液的饱和度。

Investigation of Sprayed Lu2O3 Thin Films Using XPS

Spray pyrolysis method was used to deposit Lutetium Oxide (Lu2O3) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu2O3 thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.

XPS Depth Profile Study of Sprayed Ga2O3 Thin Films

Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

Effects of dopant content on optical and electrical properties of In_2O_3: W transparent conductive films

The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.

Synthesis of free-standing Ga_2O_3 films for flexible devices by water etching of Sr_3Al_2O_6 sacrificial layers

Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.

Effect of Al_2O_3 Buffer Layers on the Properties of Sputtered VO_2 Thin Films

VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.

EIS Characterization of Sealed Anodic Oxide Films on Titanium Alloy Ti-10V-2Fe-3Al

Anodic oxide films grown on titanium alloy Ti-10V-2Fe-3Al in the solution of sodium tartrate, then sealed in boiling deionised water and calcium acetate solution were observed by using field emission scanning electron microscopy （FE-SEM）, and were chemically analysed by using energy dispersive spectroscopy （EDS）. Corrosion behaviour was investigated in a 3.5% sodium chloride solution, using electrochemical impedance spectroscopy （EIS）. The morphology of the anodic oxide films was dependent on the sealing processes. The surface sealed in calcium acetate solution presented a more homogeneous and smooth structure compared with that sealed in boiling deionised water. The corrosion resistance of the oxide films sealed in calcium acetate solution was better than that sealed in boiling deionised water.

Optical and Magnetic Properties of Fe_2O_3/SiO_2 Nano-composite Films

Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al_2O_3 films

Chemical and field-effect passivation of atomic layer deposition （ALD） Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）, respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.

纯铜组元对Al_(2)O_(3)弥散强化铜变形性能的影响

为改善Al_(2)O_(3)弥散强化铜的变形性能,通过向弥散强化铜中加入软质相纯铜组元,研究纯铜组元对弥散强化铜烧结坯变形性能的影响。对弥散铜烧结坯进行热压缩变形实验,获得了其不同热变形条件下的真应力应变曲线,建立了基于双曲正弦本构关系Arrhenius流变应力模型的本构方程,并计算获得热激活能值Q与应变速率敏感系数值m;对热挤压试样,进行室温性能检测和微观组织表征。结果表明:加入纯铜组元后,弥散铜烧结坯应力应变曲线峰值应力下降,曲线走势波动减弱,变形试样缺陷减少,热激活能Q降低,变形难度下降。应变速率较低时,纯铜组元的加入使得m值增加,弥散强化铜的塑性变好;应变速率较高时,纯铜组元的加入加剧基体软硬相不协调变形,m值降低,塑性变差。纯铜组元的加入使热挤压弥散铜的强化相浓度降低,硬度下降,导电率提升,晶粒变大。

Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al_2O_3 Thin Films

Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance （ECR） plasma-assisted atomic layer deposition （ALD） device with Al（CH3）3 （trimethylaluminum; TMA） and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was in- troduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction （XRD）, an X-ray photo- electric spectroscope （XPS）, a scanning electron microscope （SEM）, an atomic force microscope （AFM） and a high-resolution transmission electron microscope （HRTEM）. It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between theAl2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can growAl2O3 films with an excellent quality at a high growth rate at ambient temperature.

The microwave response of MgB2 /Al2O3 superconducting thin films

Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.

Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al2O3 Nanocomposite Films Based on IDC and SAXS

The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.

Interfacial Electronic Structure of Thin Cu Films Grown on Ar^+-ion Sputter-cleaned α-Al_2O_3 Substrates

The bonding and electronic structure of Cu/(0001)Al2O3 and Cu/(1120)Al2O3 interfaces has been studied experimentally using spatially-resolved transmission electron energy loss spectroscopy. The specimen were prepared by depositing Cu on single-crystal α-AI2O3 substrates, which have been Ar+-ion sputter-cleaned prior to the growth of Cu. For both orientations of the α-Al2O3 substrate, atomically abrupt interfaces formed as determined by high-resolution transmission electron microscopy. The investigations of the interfacial Cu-L2,3, Al-L2,3 and 0-K energy loss near-edge structures, which are proportional to the site- and angular-momentum-projected unoccupied density of states above the Fermi level, indicate the existence of metallic Cu-AI bonds at the Cu/AI2O3 interface independent of the substrate orientation.

High Jc Epitaxial Superconducting YBa_2Cu_3O_(7-x) Thin Films

Excellent epitaxial growth of supercon-ducting YBaCuOthin films have beenrealized on(100)SrTiOand(100)ZrOsubstrates by a planar rf or DC-magnetronsputtering apparatus with UHV system.Thequality of growth and the epitaxial orientationof the film strongly depended on substratetemperature,the substrate orientation and ox-ygen partial pressure.The films exhibitedsuperconducting onset at 92K and zero resist-ance at 90K with critical current density of

氮掺杂碳改性Ni/Al2O3催化剂的甲烷干重整反应性能研究

在甲烷干重整反应(DRM)中,常规浸渍法制备的Ni/Al2O3催化剂常因过多积炭导致催化剂失活,因此研究如何提高Ni/Al2O3催化剂的抗积炭能力具有重要意义。通过浸渍法和高温碳化法制备的氮掺杂碳表面修饰的Ni/Al2O3催化剂Ni/Al2O3@NC-3和Ni/Al2O3@NC-5(3和5分别代表多巴胺聚合时间为3 h和5 h)在DRM中表现出了较强的抗积炭性能。使用X射线衍射(XRD)、拉曼(Raman)光谱、X射线光电子能谱(XPS)、热重(TG)和扫描电镜(SEM)等表征手段对催化剂的结构和电性质进行了分析,并探讨了氮掺杂碳的引入对催化剂稳定性和抗积炭性能的影响。XPS结果表明,Ni/Al2O3@NC-3和Ni/Al2O3@NC-5催化剂中金属Ni与氮掺杂碳发生了电子相互作用,形成了催化惰性的Ni+物种,由此减缓了CH_(4)的裂解速率,进而有效地减少了积炭的产生。在经8 h活性测试后,Ni/Al2O3@NC-3催化剂的CH_(4)转化率和CO_(2)转化率分别维持在52.2%和62.3%,且反应后Ni/Al2O3@NC-3催化剂的积炭量仅为7%(质量分数,下同),远远低于Ni/Al2O3催化剂的积炭量(25%)。