Mesoporous silicon oxynitrides MCM-41 were synthesized successfully. The resulting materials not only have high nitrogen contents and good structural characteristics of MCM-41 (high surface area, narrow pore size dist...Mesoporous silicon oxynitrides MCM-41 were synthesized successfully. The resulting materials not only have high nitrogen contents and good structural characteristics of MCM-41 (high surface area, narrow pore size distribution and good order), but also are amorphous. The composition and structure of the materials were investigated by CNH element analysis, XPS, Si MAS NMR, XRD, HRTEM and N-2 sorption, respectively. Mesoporous silicon oxynitrides MCM-41 with a high nitrogen content are still non-crystal (amorphous).展开更多
Silicon oxynitride was added in shaped Al_2O_3-SiC-C refractory material to improve the slag resistance in this paper.Optimum adding quantity of silicon oxynitride powder was also studied. The results show that the sl...Silicon oxynitride was added in shaped Al_2O_3-SiC-C refractory material to improve the slag resistance in this paper.Optimum adding quantity of silicon oxynitride powder was also studied. The results show that the slag resistance of Al_2O_3-SiC-C shaped refractory is improved when 2% or 3% Si_2N_2O is added. A reasonable amount of Si_2N_2O added into Al_2O_3-Si C-C shaped refractory can produce silicon oxide into the slag, which can improve the viscosity of slag and prevent the slag erosion and penetration.展开更多
In this work, results on the study of the structure and photoluminescence (PL) properties of SiOxNy thin films are presented. The films were deposited at room temperature using a dual-ion-beam co-sputtering system. Th...In this work, results on the study of the structure and photoluminescence (PL) properties of SiOxNy thin films are presented. The films were deposited at room temperature using a dual-ion-beam co-sputtering system. The XRD and TEM results show that the deposited films have an amorphous structure. In the XPS result, we find N 1s spectra consist of one symmetric single peak at 397.8 eV, indicating that the nitrogen atoms are mainly bonded to silicon. It is in agreement to the result of FTIR. In SiOxNy films, an intense single PL peak at 590 nm is observed. Furthermore, with the increase of the N content in the SiOxNy films, the intensity of the PL peak at 590 nm increases a lot. The PL peak of 590 nm is suggested to originate from N-related defects.展开更多
We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiOxNy multil...We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiOxNy multilayer with thickness of 4 nm both for the Si and SiOxNy sublayers. The EL spectral profile exhibits some obviously modulated features upon the barrier material. By adjusting the nitride/oxygen ratio in the barrier layer, the EL peak position can be tuned from 750 nm to 695 nm. From the result of the Raman and Fourier transform infrared results, the EL is attributed to the radiative recombination of electrons and holes in luminescent centers related to the interface. The different interface characteristics induce the shift of EL peak position.展开更多
SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were investigated.The Cu...SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were investigated.The Cu/SiOxNy/ITO device with SiOxNy deposited in 0.8-sccm O2 flow shows a reliable resistive switching behavior,including good endurance and retention properties.As the conductivity of SiOxNy increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism.The temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.展开更多
以回收提纯硅片线锯屑粉与气相白炭黑为原料,合成出晶须状氮氧化硅粉体。实验研究了原料摩尔配比、保温温度、保温时间等工艺参数对氮氧化合成产物的影响。结果表明,回收提纯硅片线锯屑粉与气相白炭黑摩尔比为2.0∶1~2.6∶1、保温温度为...以回收提纯硅片线锯屑粉与气相白炭黑为原料,合成出晶须状氮氧化硅粉体。实验研究了原料摩尔配比、保温温度、保温时间等工艺参数对氮氧化合成产物的影响。结果表明,回收提纯硅片线锯屑粉与气相白炭黑摩尔比为2.0∶1~2.6∶1、保温温度为1380℃、保温时间为4 h条件下可获得较为纯净的氮氧化硅粉体。产物中同时伴生一种类似于O1-Si Al ON结构的氮氧化硅低温亚稳相（LM Si2N2O）,且该亚稳相含量随着原料摩尔配比的降低、温度的升高、时间的延长逐渐降低。所形成的氮氧化硅呈晶须状的原因与白炭黑的气化挥发及随后的氮氧化硅气相沉积生长机制有关。展开更多
文摘Mesoporous silicon oxynitrides MCM-41 were synthesized successfully. The resulting materials not only have high nitrogen contents and good structural characteristics of MCM-41 (high surface area, narrow pore size distribution and good order), but also are amorphous. The composition and structure of the materials were investigated by CNH element analysis, XPS, Si MAS NMR, XRD, HRTEM and N-2 sorption, respectively. Mesoporous silicon oxynitrides MCM-41 with a high nitrogen content are still non-crystal (amorphous).
文摘Silicon oxynitride was added in shaped Al_2O_3-SiC-C refractory material to improve the slag resistance in this paper.Optimum adding quantity of silicon oxynitride powder was also studied. The results show that the slag resistance of Al_2O_3-SiC-C shaped refractory is improved when 2% or 3% Si_2N_2O is added. A reasonable amount of Si_2N_2O added into Al_2O_3-Si C-C shaped refractory can produce silicon oxide into the slag, which can improve the viscosity of slag and prevent the slag erosion and penetration.
基金The project supported by the Nature Science Foundation of University of Jiangsu Province(No. 03KJB140116 )
文摘In this work, results on the study of the structure and photoluminescence (PL) properties of SiOxNy thin films are presented. The films were deposited at room temperature using a dual-ion-beam co-sputtering system. The XRD and TEM results show that the deposited films have an amorphous structure. In the XPS result, we find N 1s spectra consist of one symmetric single peak at 397.8 eV, indicating that the nitrogen atoms are mainly bonded to silicon. It is in agreement to the result of FTIR. In SiOxNy films, an intense single PL peak at 590 nm is observed. Furthermore, with the increase of the N content in the SiOxNy films, the intensity of the PL peak at 590 nm increases a lot. The PL peak of 590 nm is suggested to originate from N-related defects.
基金supported by the National Natural Science Foundation of China (Grant No. 60806046)the Foundation for Distinguished Young Talents in Higher Education of Guangdong (Grant Nos. LYM09101,LYM11090 and LYM10099)
文摘We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiOxNy multilayer with thickness of 4 nm both for the Si and SiOxNy sublayers. The EL spectral profile exhibits some obviously modulated features upon the barrier material. By adjusting the nitride/oxygen ratio in the barrier layer, the EL peak position can be tuned from 750 nm to 695 nm. From the result of the Raman and Fourier transform infrared results, the EL is attributed to the radiative recombination of electrons and holes in luminescent centers related to the interface. The different interface characteristics induce the shift of EL peak position.
基金Project supported by the Natural Science Foundation of Zhejiang Province(No.LY17F040001)the Open Project Program of Surface Physics Laboratory(National Key Laboratory)of Fudan University(No.KF2015_02)+2 种基金the Open Project Program of National Laboratory for Infrared Physics,Chinese Academy of Sciences(No.M201503)the Zhejiang Provincial Science and Technology Key Innovation Team(No.2011R50012)the Zhejiang Provincial Key Laboratory(No.2013E10022)
文摘SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were investigated.The Cu/SiOxNy/ITO device with SiOxNy deposited in 0.8-sccm O2 flow shows a reliable resistive switching behavior,including good endurance and retention properties.As the conductivity of SiOxNy increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism.The temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.
文摘以回收提纯硅片线锯屑粉与气相白炭黑为原料,合成出晶须状氮氧化硅粉体。实验研究了原料摩尔配比、保温温度、保温时间等工艺参数对氮氧化合成产物的影响。结果表明,回收提纯硅片线锯屑粉与气相白炭黑摩尔比为2.0∶1~2.6∶1、保温温度为1380℃、保温时间为4 h条件下可获得较为纯净的氮氧化硅粉体。产物中同时伴生一种类似于O1-Si Al ON结构的氮氧化硅低温亚稳相（LM Si2N2O）,且该亚稳相含量随着原料摩尔配比的降低、温度的升高、时间的延长逐渐降低。所形成的氮氧化硅呈晶须状的原因与白炭黑的气化挥发及随后的氮氧化硅气相沉积生长机制有关。
