Gd3Sc2Ga3O12 polycrystalline material for single crystal growth was prepared with Ga, Gd2O3 and Sc2O3 as starting materials and aqueous ammonia as the precipitator by co-precipitation method. The precursors sintered a...Gd3Sc2Ga3O12 polycrystalline material for single crystal growth was prepared with Ga, Gd2O3 and Sc2O3 as starting materials and aqueous ammonia as the precipitator by co-precipitation method. The precursors sintered at various temperatures were characterized by infrared spectra （IR）, X-ray diffractometry （XRD） and transmitted electron microscopy （TEM）. The results showed that pure GSGG phase could be obtained at 900 ℃. The sintered powders were well-dispersed and less-aggregated in the sintered temperature range of 900 - 1000 ℃. XRD and TEM show that the polycrystalline particle sizes of the polycrystalline powders were about 20 - 50 nm. Compared with the method that Ga2O3, Gd2O3 and Sc2O3 were mixed directly and sintered to get polycrystalline materials, the synthesized temperature was lower and sintered time was shorter. Thus co-precipitation was a good method to synthesize GSGG polycrystalline material.展开更多
Single crystal of cobalt (Co)-doped Y3Sc2Ga3O12 (YSGG) with the dimensions up to Φ20×40 mm3 and undoped YSGG crystal with the dimensions up to Φ28×60 mm3 have been grown using the Czochralski technique. Th...Single crystal of cobalt (Co)-doped Y3Sc2Ga3O12 (YSGG) with the dimensions up to Φ20×40 mm3 and undoped YSGG crystal with the dimensions up to Φ28×60 mm3 have been grown using the Czochralski technique. The structure of the crystal was characterized by the X-ray powder diffraction (XRPD) method. The absorbance spectra of the crystal shows that it has strong absorption bands at 606 and 1540 nm. The results indicate that the crystal Y3Sc2Ga3O12 may be a kind of good Q-switch material.展开更多
Absorption, excitation and emission spectra as well as decay time measurements at 10, 77, and 300 K were perfumed for Gd3Sc2Ga3O12 garnet single-crystal doped with Cr^3＋ and Nd^3＋ ions. Strong reabsorption of Cr3＋ ...Absorption, excitation and emission spectra as well as decay time measurements at 10, 77, and 300 K were perfumed for Gd3Sc2Ga3O12 garnet single-crystal doped with Cr^3＋ and Nd^3＋ ions. Strong reabsorption of Cr3＋ emission by Nd3＋ absorption lines was ob- served. The assignments of f-f and d-d transitions were proposed. The broad emission band of chromium ions is an indication that weak/intermediate crystal field strength is present at the Cr3＋ site.展开更多
The photoluminescence （PL） property effect of Sc3＋ on the Er3＋/Y3＋/Yb3＋ doped Al2O3 powders prepared by sol-gel method has been investigated. The X-ray diffraction （XRD） and transmission electron microscopy （...The photoluminescence （PL） property effect of Sc3＋ on the Er3＋/Y3＋/Yb3＋ doped Al2O3 powders prepared by sol-gel method has been investigated. The X-ray diffraction （XRD） and transmission electron microscopy （TEM） implied that the distribution of dopants （Er3＋ , Y3＋ , Yb3＋ , Sc3＋） was improved effectively with the rise of Sc3＋ concentration. The Fourier transform infrared spectra （FTIR） results demonstrated that the ligand around the quenching center -OH and the population of -OH were altered by introducing different amounts of Sc3＋ . The PL intensity centered at 1530 nm was increasingly improved with the rise of Sc3＋ concentration, as well as the corresponding full widths at the half maximum （FWHM） and lifetime. The optimized PL intensity was 4.7 times higher than that non-Sc3＋ doped sample for the Al2O3 powders codoped with 10mol% Sc3＋ . This material can be promising candidates for optical fiber amplifier.展开更多
Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal c...Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal constituents would be arranged at the lattice sites by precisely controlling the crystal growth process.Growing interface is the position where the phase transition of crystal constituents occurs during pulling growth process.The precise control of energy at the growing interface becomes a key technique in pulling growth.In this work,we review some recent advances of pulling technique towards rare earth single crystal growth.In Czochralski pulling growth,the optimized growth parameters were designed for rare earth ions doped Y_3Al_5O_(12)and Ce:(Lu_(1-x)Y_x)_2Si O_5on the basis of anisotropic chemical bonding and isotropic mass transfer calculations at the growing interface.The fast growth of high quality rare earth single crystals is realized by controlling crystallization thermodynamics and kinetics in different size zones.On the other hand,the micro pulling down technique can be used for high throughput screening novel rare earth optical crystals.The growth interface control is realized by improving the crucible bottom and temperature field,which favors the growth of rare earth crystal fibers.The rare earth laser crystal fiber can serve as another kind of laser gain medium between conventional bulk single crystal and glass fiber.The future work on pulling technique might focus on the mass production of rare earth single crystals with extreme size and with the size near that of devices.展开更多
基金Project supported by the National Natural Science Foundation of China (50472104 60478025)
文摘Gd3Sc2Ga3O12 polycrystalline material for single crystal growth was prepared with Ga, Gd2O3 and Sc2O3 as starting materials and aqueous ammonia as the precipitator by co-precipitation method. The precursors sintered at various temperatures were characterized by infrared spectra （IR）, X-ray diffractometry （XRD） and transmitted electron microscopy （TEM）. The results showed that pure GSGG phase could be obtained at 900 ℃. The sintered powders were well-dispersed and less-aggregated in the sintered temperature range of 900 - 1000 ℃. XRD and TEM show that the polycrystalline particle sizes of the polycrystalline powders were about 20 - 50 nm. Compared with the method that Ga2O3, Gd2O3 and Sc2O3 were mixed directly and sintered to get polycrystalline materials, the synthesized temperature was lower and sintered time was shorter. Thus co-precipitation was a good method to synthesize GSGG polycrystalline material.
基金Project was supported bythe National Natural Science Foundation of China (50372034 ,50323006)
文摘Single crystal of cobalt (Co)-doped Y3Sc2Ga3O12 (YSGG) with the dimensions up to Φ20×40 mm3 and undoped YSGG crystal with the dimensions up to Φ28×60 mm3 have been grown using the Czochralski technique. The structure of the crystal was characterized by the X-ray powder diffraction (XRPD) method. The absorbance spectra of the crystal shows that it has strong absorption bands at 606 and 1540 nm. The results indicate that the crystal Y3Sc2Ga3O12 may be a kind of good Q-switch material.
基金supported by Ministry of Science and Higher Education (N N507 372335)
文摘Absorption, excitation and emission spectra as well as decay time measurements at 10, 77, and 300 K were perfumed for Gd3Sc2Ga3O12 garnet single-crystal doped with Cr^3＋ and Nd^3＋ ions. Strong reabsorption of Cr3＋ emission by Nd3＋ absorption lines was ob- served. The assignments of f-f and d-d transitions were proposed. The broad emission band of chromium ions is an indication that weak/intermediate crystal field strength is present at the Cr3＋ site.
基金supported by the Natural Science Foundation of Fujian Province (No. 2008J0146)
文摘The photoluminescence （PL） property effect of Sc3＋ on the Er3＋/Y3＋/Yb3＋ doped Al2O3 powders prepared by sol-gel method has been investigated. The X-ray diffraction （XRD） and transmission electron microscopy （TEM） implied that the distribution of dopants （Er3＋ , Y3＋ , Yb3＋ , Sc3＋） was improved effectively with the rise of Sc3＋ concentration. The Fourier transform infrared spectra （FTIR） results demonstrated that the ligand around the quenching center -OH and the population of -OH were altered by introducing different amounts of Sc3＋ . The PL intensity centered at 1530 nm was increasingly improved with the rise of Sc3＋ concentration, as well as the corresponding full widths at the half maximum （FWHM） and lifetime. The optimized PL intensity was 4.7 times higher than that non-Sc3＋ doped sample for the Al2O3 powders codoped with 10mol% Sc3＋ . This material can be promising candidates for optical fiber amplifier.
基金supported by Jilin Province Science and Technology Development Project(Grant No.21521092JH)
文摘Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal constituents would be arranged at the lattice sites by precisely controlling the crystal growth process.Growing interface is the position where the phase transition of crystal constituents occurs during pulling growth process.The precise control of energy at the growing interface becomes a key technique in pulling growth.In this work,we review some recent advances of pulling technique towards rare earth single crystal growth.In Czochralski pulling growth,the optimized growth parameters were designed for rare earth ions doped Y_3Al_5O_(12)and Ce:(Lu_(1-x)Y_x)_2Si O_5on the basis of anisotropic chemical bonding and isotropic mass transfer calculations at the growing interface.The fast growth of high quality rare earth single crystals is realized by controlling crystallization thermodynamics and kinetics in different size zones.On the other hand,the micro pulling down technique can be used for high throughput screening novel rare earth optical crystals.The growth interface control is realized by improving the crucible bottom and temperature field,which favors the growth of rare earth crystal fibers.The rare earth laser crystal fiber can serve as another kind of laser gain medium between conventional bulk single crystal and glass fiber.The future work on pulling technique might focus on the mass production of rare earth single crystals with extreme size and with the size near that of devices.
