This study explores the application of single photon detection(SPD)technology in underwater wireless optical communication(UWOC)and analyzes the influence of different modulation modes and error correction coding type...This study explores the application of single photon detection(SPD)technology in underwater wireless optical communication(UWOC)and analyzes the influence of different modulation modes and error correction coding types on communication performance.The study investigates the impact of on-off keying(OOK)and 2-pulse-position modulation(2-PPM)on the bit error rate(BER)in single-channel intensity and polarization multiplexing.Furthermore,it compares the error correction performance of low-density parity check(LDPC)and Reed-Solomon(RS)codes across different error correction coding types.The effects of unscattered photon ratio and depolarization ratio on BER are also verified.Finally,a UWOC system based on SPD is constructed,achieving 14.58 Mbps with polarization OOK multiplexing modulation and 4.37 Mbps with polarization 2-PPM multiplexing modulation using LDPC code error correction.展开更多
A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event ups...A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.展开更多
基金supported in part by the National Natural Science Foundation of China(Nos.62071441 and 61701464)in part by the Fundamental Research Funds for the Central Universities(No.202151006).
文摘This study explores the application of single photon detection(SPD)technology in underwater wireless optical communication(UWOC)and analyzes the influence of different modulation modes and error correction coding types on communication performance.The study investigates the impact of on-off keying(OOK)and 2-pulse-position modulation(2-PPM)on the bit error rate(BER)in single-channel intensity and polarization multiplexing.Furthermore,it compares the error correction performance of low-density parity check(LDPC)and Reed-Solomon(RS)codes across different error correction coding types.The effects of unscattered photon ratio and depolarization ratio on BER are also verified.Finally,a UWOC system based on SPD is constructed,achieving 14.58 Mbps with polarization OOK multiplexing modulation and 4.37 Mbps with polarization 2-PPM multiplexing modulation using LDPC code error correction.
基金the National Natural Science Foundation of China(Nos.12035019,11690041,and 11805244).
文摘A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.
