Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability...Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.展开更多
The magnetic phase diagram (x,T) of the SmMn2(Ge1-xSix)2 system has been studied by susceptibility and magnetization measurement. With increasing silicon concentration the temperature region of ferromagnetic ordering ...The magnetic phase diagram (x,T) of the SmMn2(Ge1-xSix)2 system has been studied by susceptibility and magnetization measurement. With increasing silicon concentration the temperature region of ferromagnetic ordering decreases on the phaae diagram.展开更多
The rapid development of phosphor-converted white light emitting diodes(pc-WLEDs)requires new red phosphors with efficient and thermally stable luminescence for high-quality warm-white lighting.However,it is still a c...The rapid development of phosphor-converted white light emitting diodes(pc-WLEDs)requires new red phosphors with efficient and thermally stable luminescence for high-quality warm-white lighting.However,it is still a challenge to discover red phosphors with facile synthesis,high internal quantum efficiency(IQE),excellent thermal stability and high color purity.Herein,a novel red-emitting Eu^(3+)activated barium dialuminum digermanate(BaAl_(2)Ge_(3)O_(8),EAGO)phosphor showing strong red emission at 610 nm was prepared.The IQE is improved from 32.91%to 78.84%by employing a charge compensation strategy.The lithium-ion co-dop ed BAGO:Eu^(3+)phosphor exhibits a nearly twofold increase in integral photoluminescence(PL)intensity and the high color purity reaches 94.17%.Impressively,the PL intensity of the BAGO:Eu^(3+),Li^(+)phosphor drops by only 2.6%at 150℃of that at room temperature.Finally,the pc-WLED using the red BAGO:Eu^(3+),Li^(+)phosphor exhibits white light with the chromaticity coordinate of(0.3515,0.3495),a high color-rendering index of 92 and a low correlated color temperature of 4746 K.All these results manifest that BAGO:Eu^(3+),Li^(+)phosphor is a suitable red phosphor for nearultraviolet(NUV)chip-based pc-WLEDs.展开更多
This paper describes the solid-state production of a unique yellowish-grey microwave dielectric ceramic,Ca_(3)Fe_(2)Ge_(3)O_(12)(CFG).Rietveld refinement demonstrated that CFG corresponds to a cubic system(space group...This paper describes the solid-state production of a unique yellowish-grey microwave dielectric ceramic,Ca_(3)Fe_(2)Ge_(3)O_(12)(CFG).Rietveld refinement demonstrated that CFG corresponds to a cubic system(space group 230:Ia 3 d).The relative density of the ceramic initially increased and then decreased with the sintering temperature,reaching a maximum of 96.92%at 1330℃.According to scanning electron mi-croscopy and energy-dispersive spectroscopy results,the CFG ceramic grains are spherical and consistent in size;furthermore,they have distinct grain boundaries and a uniform distribution of the four con-stituent elements.The CFG ceramic has a superior crystal structure and a high crystallinity,according to transmission electron microscopy.Raman spectroscopy revealed that the Q×f value of the ceramic and the full width at half maximum of the Raman peak are negatively correlated.The ceramic possesses the best overall dielectric characteristics after sintering at 1330℃for 4 h:ε_(r)=10.31,Q×f=82636 GHz,andτ_(f)=-45.66×10^(-6)℃^(-1),showing that it is a promising candidate for use in mobile devices.展开更多
Threshold switching(TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low po...Threshold switching(TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage(0.38 V)and current(200 nA), an extremely steep slope(< 0.1 m V/dec), and a relatively large off/on ratio(> 10^(3)). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.展开更多
Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory(PCRAM)have attracted an extensive investigation.However,due to the intrinsic asymmetric reversible phase trans...Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory(PCRAM)have attracted an extensive investigation.However,due to the intrinsic asymmetric reversible phase transition,the defective weight update of PCRAM synapses in aspects of tuning range,linearity and continuity has long required a system-level complexity of circuits and al-gorithms.The cell-level improvements to a great extent may slim the system thus achieving efficient computing.We report in this work the great enhancement of Ge_(2)Sb_(2)Te_(5)(GST)based PCRAM synapses by combining materials engineering and pulse programming.It is found that carbon doping in GST retards the rate of phase changing thus increasing the controllability of the conductance,while non-linear programmable pulse excitations can eventually lead to a reliable synaptic potentiation and depression.A set of improved programmable pulse schemes for spike-timing dependent plasticity was then demonstrated,suggesting its potential superiority in flexible programming and reliable data collection.Our methods and results are of great significance for implementing PCRAM electronic synapses and high-performance neuro-inspired computing.展开更多
Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multi...Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multilevel cell(MLC)operation,potentially causing thermal crosstalk issues and phase separation issues,respectively.To address these challenges,we propose a high-aspect-ratio(25:1)lateral nanowire(NW)PCM device with conventional chalcogenide Ge_(2)Sb_(2)Te_(5)(GST-225)to realize stable MLC operations,i.e.,low intra-and inter-cell variability and low resistance drift(coefficient=0.009).The improved MLC performance is attributed to the high aspect ratio,which enables precise control of the amorphous region because of sidewall confinement,as confirmed by transmission electron microscopy analysis.In summary,the NW devices provide guidance for the design of future high-aspect-ratio threedimensional PCM devices with MLC capability.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62205231 and 22002102)the Postgraduate Research&Practice Innovation Program of Jiangsu Province,China(Grant No.KYCX223271)Jiangsu Key Laboratory for Environment Functional Materials。
文摘Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.
文摘The magnetic phase diagram (x,T) of the SmMn2(Ge1-xSix)2 system has been studied by susceptibility and magnetization measurement. With increasing silicon concentration the temperature region of ferromagnetic ordering decreases on the phaae diagram.
基金Project supported by the National Natural Science Foundation of China(52172008,51872255)the National Key R&D Program of China(2022YFB3503700)。
文摘The rapid development of phosphor-converted white light emitting diodes(pc-WLEDs)requires new red phosphors with efficient and thermally stable luminescence for high-quality warm-white lighting.However,it is still a challenge to discover red phosphors with facile synthesis,high internal quantum efficiency(IQE),excellent thermal stability and high color purity.Herein,a novel red-emitting Eu^(3+)activated barium dialuminum digermanate(BaAl_(2)Ge_(3)O_(8),EAGO)phosphor showing strong red emission at 610 nm was prepared.The IQE is improved from 32.91%to 78.84%by employing a charge compensation strategy.The lithium-ion co-dop ed BAGO:Eu^(3+)phosphor exhibits a nearly twofold increase in integral photoluminescence(PL)intensity and the high color purity reaches 94.17%.Impressively,the PL intensity of the BAGO:Eu^(3+),Li^(+)phosphor drops by only 2.6%at 150℃of that at room temperature.Finally,the pc-WLED using the red BAGO:Eu^(3+),Li^(+)phosphor exhibits white light with the chromaticity coordinate of(0.3515,0.3495),a high color-rendering index of 92 and a low correlated color temperature of 4746 K.All these results manifest that BAGO:Eu^(3+),Li^(+)phosphor is a suitable red phosphor for nearultraviolet(NUV)chip-based pc-WLEDs.
基金supported by Natural Science Foundation of China(Grant Nos.61761015,11664008)Natural Science Foundation of Guangxi(Grant No 2018GXNSFFA050001)the High Level Innovation Team and Outstanding Scholar Program of Guangxi Institutes.
文摘This paper describes the solid-state production of a unique yellowish-grey microwave dielectric ceramic,Ca_(3)Fe_(2)Ge_(3)O_(12)(CFG).Rietveld refinement demonstrated that CFG corresponds to a cubic system(space group 230:Ia 3 d).The relative density of the ceramic initially increased and then decreased with the sintering temperature,reaching a maximum of 96.92%at 1330℃.According to scanning electron mi-croscopy and energy-dispersive spectroscopy results,the CFG ceramic grains are spherical and consistent in size;furthermore,they have distinct grain boundaries and a uniform distribution of the four con-stituent elements.The CFG ceramic has a superior crystal structure and a high crystallinity,according to transmission electron microscopy.Raman spectroscopy revealed that the Q×f value of the ceramic and the full width at half maximum of the Raman peak are negatively correlated.The ceramic possesses the best overall dielectric characteristics after sintering at 1330℃for 4 h:ε_(r)=10.31,Q×f=82636 GHz,andτ_(f)=-45.66×10^(-6)℃^(-1),showing that it is a promising candidate for use in mobile devices.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61804079 and 61964012)the open research fund of the National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology (Grant No.KFJJ20200102)+2 种基金the Natural Science Foundation of Jiangsu Province of China (Grant Nos.BK20211273 and BZ2021031)the Nanjing University of Posts and Telecommunications (Grant No.NY220112)the Foundation of Jiangxi Science and Technology Department (Grant No.20202ACBL21200)。
文摘Threshold switching(TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage(0.38 V)and current(200 nA), an extremely steep slope(< 0.1 m V/dec), and a relatively large off/on ratio(> 10^(3)). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.
基金This work was supported by Key R&D Program of Shaanxi Province of China(2020GY-271 and 2018ZDXM-GY-150)the Fundamental Research Funds for the Central Universities(xjj2018016)+3 种基金the“111 Project”of China(B14040),the Open Project of State Key Laboratory of Electronic Thin Films and Integrated Devices(KFJJ201902)the Open Project of State Key Laboratory of Information Functional Materials(SKL-201908)the Natural Sci-ences and Engineering Research Council of Canada(NSERC,Dis-covery Grant No.RGPIN-2017-06915)the National Natural Science Foundation of China(91964204 and 61634008).
文摘Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory(PCRAM)have attracted an extensive investigation.However,due to the intrinsic asymmetric reversible phase transition,the defective weight update of PCRAM synapses in aspects of tuning range,linearity and continuity has long required a system-level complexity of circuits and al-gorithms.The cell-level improvements to a great extent may slim the system thus achieving efficient computing.We report in this work the great enhancement of Ge_(2)Sb_(2)Te_(5)(GST)based PCRAM synapses by combining materials engineering and pulse programming.It is found that carbon doping in GST retards the rate of phase changing thus increasing the controllability of the conductance,while non-linear programmable pulse excitations can eventually lead to a reliable synaptic potentiation and depression.A set of improved programmable pulse schemes for spike-timing dependent plasticity was then demonstrated,suggesting its potential superiority in flexible programming and reliable data collection.Our methods and results are of great significance for implementing PCRAM electronic synapses and high-performance neuro-inspired computing.
基金supported by the National Natural Science Foundation of China(62174065)the Key Research and Development Plan of Hubei Province(2020BAB007)+1 种基金Hubei Provincial Natural Science Foundation(2021CFA038)the support from Hubei Key Laboratory of Advanced Memories&Hubei Engineering Research Center on Microelectronics。
文摘Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multilevel cell(MLC)operation,potentially causing thermal crosstalk issues and phase separation issues,respectively.To address these challenges,we propose a high-aspect-ratio(25:1)lateral nanowire(NW)PCM device with conventional chalcogenide Ge_(2)Sb_(2)Te_(5)(GST-225)to realize stable MLC operations,i.e.,low intra-and inter-cell variability and low resistance drift(coefficient=0.009).The improved MLC performance is attributed to the high aspect ratio,which enables precise control of the amorphous region because of sidewall confinement,as confirmed by transmission electron microscopy analysis.In summary,the NW devices provide guidance for the design of future high-aspect-ratio threedimensional PCM devices with MLC capability.
