EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices,and the doped one could be a good spin injector.Herein,we fabricate a spin-functional tunnel junction by epitaxially growing...EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices,and the doped one could be a good spin injector.Herein,we fabricate a spin-functional tunnel junction by epitaxially growing the ferromagnetic EuS film on Nb-doped SrTiO3.The improvement of Curie temperature up to 35 K is associated with indirect exchange through additional charge carriers at the interface of EuS/Nb:STO junction.Its magnetic field controlled current-voltage curves indicate the large magnetoresistance(MR)effect in EuS barriers as a highly spin-polarized injector.The negative MR is up to 60%in 10-nm EuS/Nb:STO at 4 T and 30 K.The MR is enhanced with increasing thickness of EuS barrier.The large negative MR effect over a wide temperature range makes this junction into a potential candidate for spintronic devices.展开更多
The third-order optical nonlinearities, includ- ing third-order nonlinear susceptibility χ(3), nonlinear refrac- tive index (n2) and temporal response, were measured with forward DFWM using Nd:YAG mode-locked pulse l...The third-order optical nonlinearities, includ- ing third-order nonlinear susceptibility χ(3), nonlinear refrac- tive index (n2) and temporal response, were measured with forward DFWM using Nd:YAG mode-locked pulse laser. The results show that Eu2O3 doped 5ZnO-20Nb2O5-75TeO2 glasses have large n2 and ultra-fast temporal response. Ra- man spectra show that Eu2O3 dopant induces the changes in the local structure of glasses. The higher the dopant concen- tration, the larger the nonlinear refractive n2 and the faster the temporal response. The enhancement on the third-order optical nonlinearities can be attributed to the deformation of the electronic clouds in [TeO4] enhanced by Eu2O3 dopant.展开更多
基金Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB28000000 and XDB07000000)the National Key Research and Development Program of China(Grant No.2016YFA0300600)the Fund from the Beijing Municipal Science&Technology Commission(Grant No.Z191100007219012).
文摘EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices,and the doped one could be a good spin injector.Herein,we fabricate a spin-functional tunnel junction by epitaxially growing the ferromagnetic EuS film on Nb-doped SrTiO3.The improvement of Curie temperature up to 35 K is associated with indirect exchange through additional charge carriers at the interface of EuS/Nb:STO junction.Its magnetic field controlled current-voltage curves indicate the large magnetoresistance(MR)effect in EuS barriers as a highly spin-polarized injector.The negative MR is up to 60%in 10-nm EuS/Nb:STO at 4 T and 30 K.The MR is enhanced with increasing thickness of EuS barrier.The large negative MR effect over a wide temperature range makes this junction into a potential candidate for spintronic devices.
文摘The third-order optical nonlinearities, includ- ing third-order nonlinear susceptibility χ(3), nonlinear refrac- tive index (n2) and temporal response, were measured with forward DFWM using Nd:YAG mode-locked pulse laser. The results show that Eu2O3 doped 5ZnO-20Nb2O5-75TeO2 glasses have large n2 and ultra-fast temporal response. Ra- man spectra show that Eu2O3 dopant induces the changes in the local structure of glasses. The higher the dopant concen- tration, the larger the nonlinear refractive n2 and the faster the temporal response. The enhancement on the third-order optical nonlinearities can be attributed to the deformation of the electronic clouds in [TeO4] enhanced by Eu2O3 dopant.
