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Distribution of donor states on the surface of AlGaN/GaN heterostructures
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作者 Yue-Bo Liu Hong-Hui Liu +7 位作者 Jun-Yu Shen Wan-Qing Yao Feng-Ge Wang Yuan Ren Min-Jie Zhang Zhi-Sheng Wu Yang Liu Bai-Jun Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第12期620-624,共5页
The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation.A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier dio... The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation.A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier diodes have been fabricated to verify the models,but the calculation results show the uniform distribution model can not provide enough electrons to form three separate 2DEGs in the triple-channel Al GaN/GaN heterostructure.Our experiments indicate the uniform distribution model is not quite right,especially for the multiple-channel AlGaN/GaN heterostructures.Besides,it is found the exponential distribution model possibly matches the actual distribution of the surface donor states better,which allows the 2DEG to form in each channel structure during the calculation.The exponential distribution model would be helpful in the research field. 展开更多
关键词 ALGAN/GAN surface states exponent distribution
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