In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （A...In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.展开更多
Conductivity dopants with processing properties suitable for industrial applications are of importance to the organic electronics field. However, the number of commercially available organic molecular dopants is limit...Conductivity dopants with processing properties suitable for industrial applications are of importance to the organic electronics field. However, the number of commercially available organic molecular dopants is limited. The electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) is the most utilized P-dopant;however, it has high volatility and a poor sticking coefficient, which makes it difficult to control doping levels and prevent vacuum system contamination. A design concept for P-type molecular dopants based on the TCNQ core which are substituted to improve processing properties without sacrificing the electronic properties necessary is presented. The correlation between the lowest unoccupied molecular orbital (LUMO) energy and the position of substitution as well as the choice of linker is evaluated. The position of substitution as well as the choice of linker has a significant effect on the electronic properties. However, the geometry of the substituted molecules was not significantly distorted from that of the parent F4-TCNQ, and the electron density was delocalized on the TCNQ core. We also put forward four possible molecular dopants with suitable energy levels.展开更多
文摘In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.
文摘Conductivity dopants with processing properties suitable for industrial applications are of importance to the organic electronics field. However, the number of commercially available organic molecular dopants is limited. The electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) is the most utilized P-dopant;however, it has high volatility and a poor sticking coefficient, which makes it difficult to control doping levels and prevent vacuum system contamination. A design concept for P-type molecular dopants based on the TCNQ core which are substituted to improve processing properties without sacrificing the electronic properties necessary is presented. The correlation between the lowest unoccupied molecular orbital (LUMO) energy and the position of substitution as well as the choice of linker is evaluated. The position of substitution as well as the choice of linker has a significant effect on the electronic properties. However, the geometry of the substituted molecules was not significantly distorted from that of the parent F4-TCNQ, and the electron density was delocalized on the TCNQ core. We also put forward four possible molecular dopants with suitable energy levels.
