This paper investigated the effect of FA/O and hydrogen peroxide （H2O2） on ruthenium （Ru） removal rate （RR） and static etching rate （SER）. It was revealed that Ru RR and SER first linearly increased then slowl...This paper investigated the effect of FA/O and hydrogen peroxide （H2O2） on ruthenium （Ru） removal rate （RR） and static etching rate （SER）. It was revealed that Ru RR and SER first linearly increased then slowly decreaseed with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA/O could chelate Ru oxides （such as （RuO4）2- and RUO4- changed into soluble amine salts [R（NH3）4] （RuO4）2） and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.展开更多
Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barr...Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.展开更多
基金Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan(No.2009ZX02308)the Natural Science Foundation of Hebei Province(No.E2013202247)+2 种基金the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936)the Hebei Provincial Department of Education Fund(No.2011128)the Scientific Research Fund of Hebei Provincial Education(No.QN2014208)
文摘This paper investigated the effect of FA/O and hydrogen peroxide （H2O2） on ruthenium （Ru） removal rate （RR） and static etching rate （SER）. It was revealed that Ru RR and SER first linearly increased then slowly decreaseed with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA/O could chelate Ru oxides （such as （RuO4）2- and RUO4- changed into soluble amine salts [R（NH3）4] （RuO4）2） and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.
基金supported by the Special Project Items No.2 in National Long-Term Technology Development Plan(No.2009ZX02308)the Natural Science Foundation of Hebei Province(No.F2012202094)the Doctoral Program Foundation of Xinjiang Normal University Plan(No.XJNUBS1226)
文摘Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.
