The cartography of floods by two different approaches enabled us to determine the limits and the advantages of each one of them. This cartography has been applied to the El Maleh basin situated in the South-East of Mo...The cartography of floods by two different approaches enabled us to determine the limits and the advantages of each one of them. This cartography has been applied to the El Maleh basin situated in the South-East of Morocco. The HEC-RAS approach consists of a combination of the surface hydrologic model and the digital terrain model data. This combination allows thereafter the mapping of the flood zones by the use of the WMS software. Thus it can predict the probability occurrence of floods at various frequency times and determine the intensity of the flood (depth and velocity of flood water) inside the El Maleh river by using the existing hydrological data. Otherwise FHI method approach introduces a multi-criteria index to assess flood risk areas in a regional scale. Six parameters (flow accumulation, distance from drainage network, drainage network density, slope, land use, and geology) were used in this last method. The relative importance of each parameter for the occurrence and severity of flood has been connected to weight values. These values are calculated following an Analytical Hierarchy Process: AHP, a method originally developed for the solution of Operational Research problems. According to their weight values, information of the different parameters is superimposed, resulting to flood risk mapping. The use of the WMS model allowed us to accurately map the flood risk areas with precisely flood heights in different levels. However, this method is only applicable for a small portion of the basin located downstream of the hydrological station. Otherwise, the FHI method allows it to map the entire basin but without giving an indication of the water levels reached by floods. One method does not exclude the other since both approaches provide important information for flood risk assessment.展开更多
This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical...This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets. The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computational time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is -114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs. This indicates that GaAs can exhibit high transport property of the electron in the semiconductor which makes it suitable for optoelectronics devices while the wider band gap of AlAs indicates their potentials can be used in high temperature and strong electric fields device applications. The results reveal a good agreement within reasonable acceptable errors when compared with the theoretical and experimental values obtained in the work of Federico and Yin wang [1] [2].展开更多
文摘The cartography of floods by two different approaches enabled us to determine the limits and the advantages of each one of them. This cartography has been applied to the El Maleh basin situated in the South-East of Morocco. The HEC-RAS approach consists of a combination of the surface hydrologic model and the digital terrain model data. This combination allows thereafter the mapping of the flood zones by the use of the WMS software. Thus it can predict the probability occurrence of floods at various frequency times and determine the intensity of the flood (depth and velocity of flood water) inside the El Maleh river by using the existing hydrological data. Otherwise FHI method approach introduces a multi-criteria index to assess flood risk areas in a regional scale. Six parameters (flow accumulation, distance from drainage network, drainage network density, slope, land use, and geology) were used in this last method. The relative importance of each parameter for the occurrence and severity of flood has been connected to weight values. These values are calculated following an Analytical Hierarchy Process: AHP, a method originally developed for the solution of Operational Research problems. According to their weight values, information of the different parameters is superimposed, resulting to flood risk mapping. The use of the WMS model allowed us to accurately map the flood risk areas with precisely flood heights in different levels. However, this method is only applicable for a small portion of the basin located downstream of the hydrological station. Otherwise, the FHI method allows it to map the entire basin but without giving an indication of the water levels reached by floods. One method does not exclude the other since both approaches provide important information for flood risk assessment.
文摘This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets. The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computational time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is -114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs. This indicates that GaAs can exhibit high transport property of the electron in the semiconductor which makes it suitable for optoelectronics devices while the wider band gap of AlAs indicates their potentials can be used in high temperature and strong electric fields device applications. The results reveal a good agreement within reasonable acceptable errors when compared with the theoretical and experimental values obtained in the work of Federico and Yin wang [1] [2].
