The spin-dependent Andreev reflection is investigated theoretically by analyzing the electronic transport in a thin-film topological insulator(TI)ferromagnet/superconductor(FM/SC)junction.The tunneling conductance and...The spin-dependent Andreev reflection is investigated theoretically by analyzing the electronic transport in a thin-film topological insulator(TI)ferromagnet/superconductor(FM/SC)junction.The tunneling conductance and shot noise are calculated based on the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk theory.It is found that the magnetic gap in ferromagnet can enhance the Andreev retro-reflection but suppress the specular Andreev reflection.The gate potential applied to the electrode on top of superconductor can enhance the two types of reflections.There is a transition between the two types of reflections at which both the tunneling conductance and differential shot noise become zero.These results provide a method to realize and detect experimentally the intra-band specular Andreev reflection in thin film TI-based FM/SC structures.展开更多
文摘The spin-dependent Andreev reflection is investigated theoretically by analyzing the electronic transport in a thin-film topological insulator(TI)ferromagnet/superconductor(FM/SC)junction.The tunneling conductance and shot noise are calculated based on the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk theory.It is found that the magnetic gap in ferromagnet can enhance the Andreev retro-reflection but suppress the specular Andreev reflection.The gate potential applied to the electrode on top of superconductor can enhance the two types of reflections.There is a transition between the two types of reflections at which both the tunneling conductance and differential shot noise become zero.These results provide a method to realize and detect experimentally the intra-band specular Andreev reflection in thin film TI-based FM/SC structures.