The degradation of MOS transistor operation due to soft breakdown of the gate oxide is studied.Important transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown o...The degradation of MOS transistor operation due to soft breakdown of the gate oxide is studied.Important transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown occurred.The output and transfer characteristic have small change after soft breakdown as the degradations of drain current and threshold voltage is continuous.However,the increment of gate leakage current increases abruptly after the soft breakdown.The analysis to the increment of gate leakage current after the soft breakdown shows mechanism of similar Fowler Nordheim(FN) tunneling current.展开更多
文摘The degradation of MOS transistor operation due to soft breakdown of the gate oxide is studied.Important transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown occurred.The output and transfer characteristic have small change after soft breakdown as the degradations of drain current and threshold voltage is continuous.However,the increment of gate leakage current increases abruptly after the soft breakdown.The analysis to the increment of gate leakage current after the soft breakdown shows mechanism of similar Fowler Nordheim(FN) tunneling current.
