Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrea...Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.展开更多
LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks w...LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks with predominant (111) orientation representing cubic spinel structure of Fd3m symmetry with an evaluated lattice parameter of 8.199 ?. The surface topography of films exhibited pyramidal shaped grains oriented vertical to the substrate surface with root mean square surface roughness of 90 nm. The Pt/LiMn2O4 electrochemical cell in aqueous region exhibited two step de-insertion and insertion kinetics of Li ion during oxidation and reduction reaction with an initial discharge capacity of 36 μAh?cm_2?μm_1.展开更多
Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate t...Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial fihn is well crystaiHzed. In the film plane the orientation relationship between the film and the substrate is [lOOjMn3 04 ｜｜[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.展开更多
文摘Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.
文摘LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks with predominant (111) orientation representing cubic spinel structure of Fd3m symmetry with an evaluated lattice parameter of 8.199 ?. The surface topography of films exhibited pyramidal shaped grains oriented vertical to the substrate surface with root mean square surface roughness of 90 nm. The Pt/LiMn2O4 electrochemical cell in aqueous region exhibited two step de-insertion and insertion kinetics of Li ion during oxidation and reduction reaction with an initial discharge capacity of 36 μAh?cm_2?μm_1.
基金Supported by the National Basic Research Program of China under Grant Nos 2011CB921904 and 2012CB927402the National Natural Science Foundation of China under Grant Nos 11074142 and 11021464the Key Project of the Ministry of Education of China under Grant No 309003
文摘Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial fihn is well crystaiHzed. In the film plane the orientation relationship between the film and the substrate is [lOOjMn3 04 ｜｜[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.
