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RESEARCH ON THE PACKING ALGORITHM FOR ANTI-SEU OF FPGA BASED ON TRIPLE MODULAR REDUNDANCY AND THE NUMBERS OF FAN-OUTS OF THE NET
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作者 Cui Xiuhai Yang Haigang +1 位作者 Peng Yu Peng Xiyuan 《Journal of Electronics(China)》 2014年第4期284-289,共6页
Static Random Access Memory(SRAM) based Field Programmable Gate Array(FPGA) is widely applied in the field of aerospace, whose anti-SEU(Single Event Upset) capability becomes more and more important. To improve anti-F... Static Random Access Memory(SRAM) based Field Programmable Gate Array(FPGA) is widely applied in the field of aerospace, whose anti-SEU(Single Event Upset) capability becomes more and more important. To improve anti-FPGA SEU capability, the registers of the circuit netlist are tripled and divided into three categories in this study. By the packing algorithm, the registers of triple modular redundancy are loaded into different configurable logic block. At the same time, the packing algorithm considers the effect of large fan-out nets. The experimental results show that the algorithm successfully realize the packing of the register of Triple Modular Redundancy(TMR). Comparing with Timing Versatile PACKing(TVPACK), the algorithm in this study is able to obtain a 11% reduction of the number of the nets in critical path, and a 12% reduction of the time delay in critical path on average when TMR is not considered. Especially, some critical path delay of circuit can be improved about 33%. 展开更多
关键词 Field Programmable Gate Array(FPGA) Triple Modular Redundancy(TMR) Packing algorithm fan-outs of the net Critical path delay
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先进封装技术在三维闪存产品中的应用探讨
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作者 邵滋人 李太龙 汤茂友 《中国集成电路》 2023年第11期88-92,共5页
在存储技术发展过程中,三维闪存存储器以其单位面积内存储容量大、改写速度快等优点,正逐步取代机械硬盘成为大数据存储领域中的主角。但是目前市面上的Nand Flash产品封装还是多以传统金属线键合技术为主,这类传统方案会在一些特殊应... 在存储技术发展过程中,三维闪存存储器以其单位面积内存储容量大、改写速度快等优点,正逐步取代机械硬盘成为大数据存储领域中的主角。但是目前市面上的Nand Flash产品封装还是多以传统金属线键合技术为主,这类传统方案会在一些特殊应用和需求下存在较难进一步降低封装体的尺寸、传输速度受限等问题。为了应对产品尺寸持续向小、速度和带宽需求持续增大的趋势,三维闪存封装也需要更多的形式,可以结合当前涌现出的多种先进封装形式寻找新的解决方案。本文通过分析SiP、Fan-out、3D和Chiplet等先进封装形式,探讨在三维闪存封装中的可能应用方案,利用重新布线层(RDL)代替基板、TSV,Bumping代替金线的连接等技术,有效缩小封装体面积同时,提升产品的运行速度,增强数据处理能力。 展开更多
关键词 三维闪存 先进封装 SiP fan-in/fan-out 重新布线层(RDL) 硅通孔(TSV) Chiplet
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Adaptive Sub-Threshold Voltage Level Control for Voltage Deviate-Domino Circuits
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作者 C.Arun Prasath C.Gowri Shankar 《Intelligent Automation & Soft Computing》 SCIE 2023年第2期1767-1781,共15页
Leakage power and propagation delay are two significant issues found in sub-micron technology-based Complementary Metal-Oxide-Semiconductor(CMOS)-based Very Large-Scale Integration(VLSI)circuit designs.Positive Channel... Leakage power and propagation delay are two significant issues found in sub-micron technology-based Complementary Metal-Oxide-Semiconductor(CMOS)-based Very Large-Scale Integration(VLSI)circuit designs.Positive Channel Metal Oxide Semiconductor(PMOS)has been replaced by Negative Channel Metal Oxide Semiconductor(NMOS)in recent years,with low dimen-sion-switching changes in order to shape the mirror of voltage comparator.NMOS is used to reduce stacking leakage as well as total exchange.Domino Logic Cir-cuit is a powerful and versatile digital programmer that gained popularity in recent years.In this study regarding Adaptive Sub Threshold Voltage Level Control Pro-blem,the researchers intend to solve the contention issues,reduce power dissipa-tion,and increase the noise immunity by proposing Adaptive Sub Threshold Voltage Level Control(ASVLC)-based domino circuit.The efficiency and effec-tiveness of the domino circuit are demonstrated through simulation results.The suggested system makes use of high-speed broad fan-gate circuits,occupies mini-mum space,and consumes meagre amount of power.The proposed circuit was validated in Cadence simulation tool at a supply voltage of 1V,frequency of 100 MHz,and an operating temperature of 27°C with 64 input OR gates.As per the simulation results,the suggested Domino Gate reduced the power dissipa-tion by 17.58 percent and improved the noise immunity by 1.21 times in compar-ison with standard domino logic circuits. 展开更多
关键词 Domino logic power consumption figure of merit adaptive sub-threshold voltage level wide fan-in gates
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封测代工产业面临的挑战与机会
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作者 Mark LaPedus 瞿炼均 《集成电路应用》 2017年第10期65-68,共4页
在充满挑战的半导体商业环境中,封测代工(outsourced semiconductor assembly and test)工业能被预见到会有一个稳定的,在许多产品细分上强有力的增长。整个半导体行业兼并收购的活动进行得如火如荼,这对封测代工厂来说意味着越来越少... 在充满挑战的半导体商业环境中,封测代工(outsourced semiconductor assembly and test)工业能被预见到会有一个稳定的,在许多产品细分上强有力的增长。整个半导体行业兼并收购的活动进行得如火如荼,这对封测代工厂来说意味着越来越少的客户群。中国的封测代工生意任道而重远,扩张兼并的脚步仍在大踏步前行。 展开更多
关键词 集成电路制造 封测代工产业 fan-out晶圆级封装
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