We report our studies of zero-frequency shot noise in tunneling through a parallel-coupled quantum dot interferometer by employing number-resolved quantum rate equations. We show that the combination of quantum interf...We report our studies of zero-frequency shot noise in tunneling through a parallel-coupled quantum dot interferometer by employing number-resolved quantum rate equations. We show that the combination of quantum interference effect between two pathways and strong Coulomb repulsion could result in a giant Fano factor, which is controllable by tuning the enclosed magnetic flux.展开更多
We investigate the Fano factor in a strained armchair and zigzag graphene nanoribbon nanodevice under the effect of ac field in a wide range of frequencies at different temperatures （10？K–70？K）. This nanodevice i...We investigate the Fano factor in a strained armchair and zigzag graphene nanoribbon nanodevice under the effect of ac field in a wide range of frequencies at different temperatures （10？K–70？K）. This nanodevice is modeled as follows： a graphene nanoribbon is connected to two metallic leads. These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this three-terminal nanodevice. Another metallic gate is used to govern the electrostatics and the switching of the graphene nanoribbon channel. The substances at the graphene nanoribbon/metal contact are controlled by the back gate. The photon-assisted tunneling probability is deduced by solving the Dirac eigenvalue differential equation in which the Fano factor is expressed in terms of this tunneling probability. The results show that for the investigated nanodevice, the Fano factor decreases as the frequency of the induced ac field increases, while it increases as the temperature increases. In general, the Fano factors for both strained armchair and zigzag graphene nanoribbons are different. This is due to the effect of the uniaxial strain. It is shown that the band structure parameters of graphene nanoribbons at the energy gap, the C–C bond length, the hopping integral, the Fermi energy and the width are modulated by uniaxial strain. This research gives us a promise of the present nanodevice being used for digital nanoelectronics and sensors.展开更多
基金The project supported by National Natural Science Foundation of China,the Shanghai Municipal Commission of Science and Technology,the Shanghai Pujiang Programsupported by the DURINT Program administered by the US Army Research Office
文摘We report our studies of zero-frequency shot noise in tunneling through a parallel-coupled quantum dot interferometer by employing number-resolved quantum rate equations. We show that the combination of quantum interference effect between two pathways and strong Coulomb repulsion could result in a giant Fano factor, which is controllable by tuning the enclosed magnetic flux.
文摘We investigate the Fano factor in a strained armchair and zigzag graphene nanoribbon nanodevice under the effect of ac field in a wide range of frequencies at different temperatures （10？K–70？K）. This nanodevice is modeled as follows： a graphene nanoribbon is connected to two metallic leads. These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this three-terminal nanodevice. Another metallic gate is used to govern the electrostatics and the switching of the graphene nanoribbon channel. The substances at the graphene nanoribbon/metal contact are controlled by the back gate. The photon-assisted tunneling probability is deduced by solving the Dirac eigenvalue differential equation in which the Fano factor is expressed in terms of this tunneling probability. The results show that for the investigated nanodevice, the Fano factor decreases as the frequency of the induced ac field increases, while it increases as the temperature increases. In general, the Fano factors for both strained armchair and zigzag graphene nanoribbons are different. This is due to the effect of the uniaxial strain. It is shown that the band structure parameters of graphene nanoribbons at the energy gap, the C–C bond length, the hopping integral, the Fermi energy and the width are modulated by uniaxial strain. This research gives us a promise of the present nanodevice being used for digital nanoelectronics and sensors.
