An analytical model for the drain-source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer, as well ...An analytical model for the drain-source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer, as well as an n-type drift region by means of parabolic approximation of electrostatic potential. The model captures the influence of the p-type epitaxial layer doping concentration on the breakdown voltage, compared with the previously reported model, as well as the effect of the other device parameters. The analytical model is validated by comparing with a numerical device simulation and the measured characteristics of LDMOS transistors. Based on the model, optimization of LDMOS device parameters to achieve proper trade-off between the breakdown voltage and other characteristic parameters such as on-resistance and feedback capacitance is analyzed.展开更多
A new loop and fold wave-guide ion cyclotron resonance frequency （ICRF） antenna with a power output of 3 MW, which can operate at a frequency in the range of 30 MHz to 110 MHz, was designed. The design of key compon...A new loop and fold wave-guide ion cyclotron resonance frequency （ICRF） antenna with a power output of 3 MW, which can operate at a frequency in the range of 30 MHz to 110 MHz, was designed. The design of key components of the new ICRF antenna and the charac- ters of the new,.]~rototype ICRF antenna are presented. The thermo-mechanical analysis of both the Faraday shield and the current straps was conducted, and the stresses due to heat loads are studied in detail with different cooling-water velocities considered. In addition, the movability of prototype ICRF antenna under vacuum condition by the driving system was tested. An engineer- ing commissioning was successfully performed on the prototype ICRF antenna using the original transmitter. The results are close to the expected.展开更多
文摘An analytical model for the drain-source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer, as well as an n-type drift region by means of parabolic approximation of electrostatic potential. The model captures the influence of the p-type epitaxial layer doping concentration on the breakdown voltage, compared with the previously reported model, as well as the effect of the other device parameters. The analytical model is validated by comparing with a numerical device simulation and the measured characteristics of LDMOS transistors. Based on the model, optimization of LDMOS device parameters to achieve proper trade-off between the breakdown voltage and other characteristic parameters such as on-resistance and feedback capacitance is analyzed.
文摘A new loop and fold wave-guide ion cyclotron resonance frequency （ICRF） antenna with a power output of 3 MW, which can operate at a frequency in the range of 30 MHz to 110 MHz, was designed. The design of key components of the new ICRF antenna and the charac- ters of the new,.]~rototype ICRF antenna are presented. The thermo-mechanical analysis of both the Faraday shield and the current straps was conducted, and the stresses due to heat loads are studied in detail with different cooling-water velocities considered. In addition, the movability of prototype ICRF antenna under vacuum condition by the driving system was tested. An engineer- ing commissioning was successfully performed on the prototype ICRF antenna using the original transmitter. The results are close to the expected.
