研究了Fe(Ⅲ)-EDDS体系在紫外光照射下对橙黄Ⅱ的光降解过程,对橙黄Ⅱ在不同条件下的降解过程进行了动力学分析,使用响应面分析法(RSA)得出了较佳的降解条件,并考察了氧化性物种·OH和O_2^-·对橙黄Ⅱ降解的影响.结果表明:UV/Fe...研究了Fe(Ⅲ)-EDDS体系在紫外光照射下对橙黄Ⅱ的光降解过程,对橙黄Ⅱ在不同条件下的降解过程进行了动力学分析,使用响应面分析法(RSA)得出了较佳的降解条件,并考察了氧化性物种·OH和O_2^-·对橙黄Ⅱ降解的影响.结果表明:UV/Fe(Ⅲ)-EDDS体系能有效降解橙黄Ⅱ,紫外光条件下该体系能在pH在3~9范围内对橙黄Ⅱ降解效果保持良好,橙黄Ⅱ在体系中的降解符合拟一级动力学反应规律.通过响应面分析得出了橙黄Ⅱ降解的最优条件为:pH=4.0,c[Fe(Ⅲ)]=0.06 m M,c(EDDS)=0.20 m M.猝灭实验反应产生了·OH和O_2^-·,其中·OH为橙黄Ⅱ光降解主要的反应物种.反应前后FT-IR图显示在光降解过程中,苯环发生开环,橙黄Ⅱ的结构被破坏,生成小分子物质.展开更多
Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 ...Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.展开更多
文摘研究了Fe(Ⅲ)-EDDS体系在紫外光照射下对橙黄Ⅱ的光降解过程,对橙黄Ⅱ在不同条件下的降解过程进行了动力学分析,使用响应面分析法(RSA)得出了较佳的降解条件,并考察了氧化性物种·OH和O_2^-·对橙黄Ⅱ降解的影响.结果表明:UV/Fe(Ⅲ)-EDDS体系能有效降解橙黄Ⅱ,紫外光条件下该体系能在pH在3~9范围内对橙黄Ⅱ降解效果保持良好,橙黄Ⅱ在体系中的降解符合拟一级动力学反应规律.通过响应面分析得出了橙黄Ⅱ降解的最优条件为:pH=4.0,c[Fe(Ⅲ)]=0.06 m M,c(EDDS)=0.20 m M.猝灭实验反应产生了·OH和O_2^-·,其中·OH为橙黄Ⅱ光降解主要的反应物种.反应前后FT-IR图显示在光降解过程中,苯环发生开环,橙黄Ⅱ的结构被破坏,生成小分子物质.
基金Projects(5110205551462005)supported by the National Natural Science Foundation of China
文摘Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.
