This paper reports on the photol spectra of ZnSe single crystal with trace chlorine excited by the femtosecond laser pulse. Three emission bands, including second-harmonic-generation, two-photon-excited peak and a bro...This paper reports on the photol spectra of ZnSe single crystal with trace chlorine excited by the femtosecond laser pulse. Three emission bands, including second-harmonic-generation, two-photon-excited peak and a broad band at 500-700nm, were detected. The thermal strain induced by femtosecond pulse strongly influences the photoluminescence of ZnSe crystal. The corresponding strain ~ in ZnSe crystal is estimated to be about 8.8× 10^-3 at room temperature. The zinc-vacancy, as the main point defect induced by femtosecond pulse, is successfully used to interpret the broad emission at 500-700nm. The research shows that self-activated luminescence possesses the recombination mechanism of donor-vacancy pair, and it is also influenced by a few selenium defects and the temperature. The rapid decrease in photol intensity of two-photon-excited fluorescence and second-harmonic generation emission at lower temperature is attributed to the fact that more point defects result in the thermal activation of the two-photo-absorption energy converting to the stronger recombination emission of chlorine-zinc vacancy in 500-700nm. The experimental results indicate that the femtosecond exciting photoluminescence shows a completely different emission mechanism to that of He-Cd exciting luminescence in ZnSe single crystal. The femtosecond laser exhibits a higher sensitive to the impurity in crystal materials, which can be recommended as an efficient way to estimate the trace impurity in high quality crystals.展开更多
We demonstrated an Fe:ZnSe laser pumped by a 2.93-μm Cr, Er:YAG laser at liquid nitrogen and room temperature in single-shot free-running operation for the first time. The xenon flash lamp pumped Cr, Er:YAG laser had...We demonstrated an Fe:ZnSe laser pumped by a 2.93-μm Cr, Er:YAG laser at liquid nitrogen and room temperature in single-shot free-running operation for the first time. The xenon flash lamp pumped Cr, Er:YAG laser had a maximum single pulse energy of 1.414 J, and the threshold and slope efficiency were 141.70 J and 0.70% which were respectively reduced by 29.3% and increased by 52.2% compared with the Er:YAG laser. At liquid nitrogen temperature of 77 K, the maximum single pulse energy of the Fe:ZnSe laser was 197.6 m J, corresponding to a slope efficiency of 13.4%. The central wavelength and full width at half maximum(FWHM) linewidth were 4037.4 nm and 122.0 nm, respectively. At room temperature, the laser generated a maximum single pulse energy of 3.5 mJ at the central wavelength of 4509.6 nm with an FWHM linewidth of 171.5 nm.展开更多
Precursive iron films with different grain sizes were prepared by magnetron sputtering on substrates heated at different temperatures. The iron films were sulfurized at 673 K for 20 h to form pyrite films. The structu...Precursive iron films with different grain sizes were prepared by magnetron sputtering on substrates heated at different temperatures. The iron films were sulfurized at 673 K for 20 h to form pyrite films. The structural and electrical characters were determined. High substrate temperatures produce large crystallites in the precursive iron films. The pyrite films are composed of a surface layer with coarse columnar grains and a bottom layer with fine equiaxed grains. With the increase of iron grain scale, the carrier concentration decreases and the carrier mobility increases. The electrical resistivity of the pyrite films increases to a maximum in the precursive iron films with increasing the grain size to about 3g nm. Sufficient formation and growth of iron grains result in improved crystallinity and high continuity of the pyrite films. The crystal defect density, transformation stress level and atom diffusion behavior are responsible for the characteristics of the electrical properties dependent on the crystallinity and continuity of the pyrite films or the crystallizing status of the precursive iron films.展开更多
High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 ...High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 single crystals showed transmittance of higher than 80%in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol%Fe:β-Ga2O3 crystal reached to 3.63×1011Ω·cm.The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors(FETs).展开更多
Photorefractive properties of Hf：Fe：LiNbO3 crystals with various [Li]/[Nb] ratios have been investigated at 488 nm wavelength based on the two-wave coupling experiment. High diffraction efficiency and large recordin...Photorefractive properties of Hf：Fe：LiNbO3 crystals with various [Li]/[Nb] ratios have been investigated at 488 nm wavelength based on the two-wave coupling experiment. High diffraction efficiency and large recording sensitivity are observed and explained. The decrease in Li vacancies is suggested to be the main contributor to the increase in the photoconductivity and subsequently to the induction of the improvement of recording sensitivity. The saturation diffraction efficiency is measured up to 80.2%, and simultaneously the recording sensitivity of 0.91 cm/J is achieved to in the Hf：Fe：LiNbO3 crystal grown from the melt with the [Li]/[Nb] ratio of 1.20, which is significantly enhanced as compared with those of the Hf：Fe：LiNbO3 crystal with the [Li]/[Nb] ratio of 0.94 in melt under the same experimental conditions. Experimental results definitely show that increasing the [Li]/[Nb] ratio in crystal is an effective method＇for Hf：Fe：LiNbO3 crystal to improve its photorefractive properties.展开更多
Mg：Ru：Fe：LiN-bO3 crystals with various concentrations of MgO （in mole） and fixed content of RuO2 and Fe203 （in mass） are grown with the Czochralski method from the congruent melt. Their infrared transmission sp...Mg：Ru：Fe：LiN-bO3 crystals with various concentrations of MgO （in mole） and fixed content of RuO2 and Fe203 （in mass） are grown with the Czochralski method from the congruent melt. Their infrared transmission spectra are mea- sured and discussed to investigate the defect structure. With the increase of Mg2＋ concentration the blue nonvolatile holographic storage capability is enhanced. The nonvolatile holographic storage properties of dual-wavelength recording of Mg（7 mol%）：Ru：Fe：LiNbO3 nonvolatile diffraction efficiency, response time, and nonvolatile sensitivity reach 59.8%, 70 s, and 1.04 cm/J, respectively. Comparing Mg（7 mol%）：Ru：Fe：LiNbO3 with Ru：Fe：LiNbO3 crystal, the response time is shortened apparently. The nonvolatile diffraction efficiency and sensitivity are raised largely. The mechanism in blue photorefractive nonvolatile holographic storage is discussed.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant Nos 50502028 and 50336040） and the China Postdoctoral Science Foundation （Grant No 2004036139）.
文摘This paper reports on the photol spectra of ZnSe single crystal with trace chlorine excited by the femtosecond laser pulse. Three emission bands, including second-harmonic-generation, two-photon-excited peak and a broad band at 500-700nm, were detected. The thermal strain induced by femtosecond pulse strongly influences the photoluminescence of ZnSe crystal. The corresponding strain ~ in ZnSe crystal is estimated to be about 8.8× 10^-3 at room temperature. The zinc-vacancy, as the main point defect induced by femtosecond pulse, is successfully used to interpret the broad emission at 500-700nm. The research shows that self-activated luminescence possesses the recombination mechanism of donor-vacancy pair, and it is also influenced by a few selenium defects and the temperature. The rapid decrease in photol intensity of two-photon-excited fluorescence and second-harmonic generation emission at lower temperature is attributed to the fact that more point defects result in the thermal activation of the two-photo-absorption energy converting to the stronger recombination emission of chlorine-zinc vacancy in 500-700nm. The experimental results indicate that the femtosecond exciting photoluminescence shows a completely different emission mechanism to that of He-Cd exciting luminescence in ZnSe single crystal. The femtosecond laser exhibits a higher sensitive to the impurity in crystal materials, which can be recommended as an efficient way to estimate the trace impurity in high quality crystals.
基金Project supported by the National Natural Science Foundation of China(Grant No.61405047)
文摘We demonstrated an Fe:ZnSe laser pumped by a 2.93-μm Cr, Er:YAG laser at liquid nitrogen and room temperature in single-shot free-running operation for the first time. The xenon flash lamp pumped Cr, Er:YAG laser had a maximum single pulse energy of 1.414 J, and the threshold and slope efficiency were 141.70 J and 0.70% which were respectively reduced by 29.3% and increased by 52.2% compared with the Er:YAG laser. At liquid nitrogen temperature of 77 K, the maximum single pulse energy of the Fe:ZnSe laser was 197.6 m J, corresponding to a slope efficiency of 13.4%. The central wavelength and full width at half maximum(FWHM) linewidth were 4037.4 nm and 122.0 nm, respectively. At room temperature, the laser generated a maximum single pulse energy of 3.5 mJ at the central wavelength of 4509.6 nm with an FWHM linewidth of 171.5 nm.
基金supported by the National NaturalScience Foundation of China (Grant No. 50871103).
文摘Precursive iron films with different grain sizes were prepared by magnetron sputtering on substrates heated at different temperatures. The iron films were sulfurized at 673 K for 20 h to form pyrite films. The structural and electrical characters were determined. High substrate temperatures produce large crystallites in the precursive iron films. The pyrite films are composed of a surface layer with coarse columnar grains and a bottom layer with fine equiaxed grains. With the increase of iron grain scale, the carrier concentration decreases and the carrier mobility increases. The electrical resistivity of the pyrite films increases to a maximum in the precursive iron films with increasing the grain size to about 3g nm. Sufficient formation and growth of iron grains result in improved crystallinity and high continuity of the pyrite films. The crystal defect density, transformation stress level and atom diffusion behavior are responsible for the characteristics of the electrical properties dependent on the crystallinity and continuity of the pyrite films or the crystallizing status of the precursive iron films.
基金the Scientific and Innovative Action Plan of Shanghai,China(Grant No.18511110502)Equipment Pre-research Fund Key Project,China(Grant No.6140922010601).
文摘High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 single crystals showed transmittance of higher than 80%in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol%Fe:β-Ga2O3 crystal reached to 3.63×1011Ω·cm.The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors(FETs).
基金supported by the Fundamental Research Foundation of Commission of Science Technology,Industry for National Defense of China (Grant No.2320060089)and National Basic Research and Development Program of China (Grant No.2007CB3070001)Program of Excellent Team in Harbin Institute of Technology,China
文摘Photorefractive properties of Hf：Fe：LiNbO3 crystals with various [Li]/[Nb] ratios have been investigated at 488 nm wavelength based on the two-wave coupling experiment. High diffraction efficiency and large recording sensitivity are observed and explained. The decrease in Li vacancies is suggested to be the main contributor to the increase in the photoconductivity and subsequently to the induction of the improvement of recording sensitivity. The saturation diffraction efficiency is measured up to 80.2%, and simultaneously the recording sensitivity of 0.91 cm/J is achieved to in the Hf：Fe：LiNbO3 crystal grown from the melt with the [Li]/[Nb] ratio of 1.20, which is significantly enhanced as compared with those of the Hf：Fe：LiNbO3 crystal with the [Li]/[Nb] ratio of 0.94 in melt under the same experimental conditions. Experimental results definitely show that increasing the [Li]/[Nb] ratio in crystal is an effective method＇for Hf：Fe：LiNbO3 crystal to improve its photorefractive properties.
基金Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. DL12AB03)the National Natural Science Founda-tion of China (Grant No. 60777006)
文摘Mg：Ru：Fe：LiN-bO3 crystals with various concentrations of MgO （in mole） and fixed content of RuO2 and Fe203 （in mass） are grown with the Czochralski method from the congruent melt. Their infrared transmission spectra are mea- sured and discussed to investigate the defect structure. With the increase of Mg2＋ concentration the blue nonvolatile holographic storage capability is enhanced. The nonvolatile holographic storage properties of dual-wavelength recording of Mg（7 mol%）：Ru：Fe：LiNbO3 nonvolatile diffraction efficiency, response time, and nonvolatile sensitivity reach 59.8%, 70 s, and 1.04 cm/J, respectively. Comparing Mg（7 mol%）：Ru：Fe：LiNbO3 with Ru：Fe：LiNbO3 crystal, the response time is shortened apparently. The nonvolatile diffraction efficiency and sensitivity are raised largely. The mechanism in blue photorefractive nonvolatile holographic storage is discussed.
