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Magnetic and electronic properties of bulk and two-dimensional FeBi_(2)Te_(4):A first-principles study
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作者 王倩倩 赵建洲 +4 位作者 吴维康 周胤宁 Qile Li Mark T.Edmonds 杨声远 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第8期450-456,共7页
Layered magnetic materials,such as MnBi_(2)Te_(4),have drawn much attention owing to their potential for realizing twodimensional(2D)magnetism and possible topological states.Recently,FeBi_(2)Te_(4),which is isostruct... Layered magnetic materials,such as MnBi_(2)Te_(4),have drawn much attention owing to their potential for realizing twodimensional(2D)magnetism and possible topological states.Recently,FeBi_(2)Te_(4),which is isostructural to MnBi_(2)Te_(4),has been synthesized in experiments,but its detailed magnetic ordering and band topology have not been clearly understood yet.Here,based on first-principles calculations,we investigate the magnetic and electronic properties of FeBi_(2)Te_(4)in bulk and 2D forms.We show that different from MnBi_(2)Te_(4),the magnetic ground states of bulk,single-layer,and bilayer FeBi_(2)Te_(4)all favor a 120°noncollinear antiferromagnetic ordering,and they are topologically trivial narrow-gap semiconductors.For the bilayer case,we find that a quantum anomalous Hall effect with a unit Chern number is realized in the ferromagnetic state,which may be achieved in experiment by an external magnetic field or by magnetic proximity coupling.Our work clarifies the physical properties of the new material system of FeBi_(2)Te_(4)and reveals it as a potential platform for studying magnetic frustration down to 2D limit as well as quantum anomalous Hall effect. 展开更多
关键词 febi_(2)te_(4) two-dimensional(2D)magnetism noncollinear antiferromagnet quantum anomalous Hall effect first-principles calculation
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本征磁性拓扑绝缘体MnBi_(2)Te_(4)研究进展
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作者 谢向男 李成 +2 位作者 曾俊炜 周珅 江天 《物理学报》 SCIE EI CAS CSCD 北大核心 2023年第18期75-93,共19页
本征磁性拓扑绝缘体非平庸拓扑态和磁有序的相互作用使其具备量子反常霍尔效应和轴子绝缘体等奇异物理性质,在低功耗拓扑自旋电子器件及拓扑量子计算等方面展现广泛应用前景.自2019年第一种本征磁性拓扑绝缘体MnBi_(2)Te_(4)在实验上被... 本征磁性拓扑绝缘体非平庸拓扑态和磁有序的相互作用使其具备量子反常霍尔效应和轴子绝缘体等奇异物理性质,在低功耗拓扑自旋电子器件及拓扑量子计算等方面展现广泛应用前景.自2019年第一种本征磁性拓扑绝缘体MnBi_(2)Te_(4)在实验上被发现以来,该材料体系领域迅速吸引了大量研究者的目光,引发了研究热潮.本文将从MnBi_(2)Te_(4)基本性质出发,介绍近期本征磁性拓扑绝缘体MnBi_(2)Te_(4)的一些重要研究成果,着重阐述MnBi_2T_e4系列的量子反常霍尔效应、轴子绝缘体态和马约拉纳零能模等拓扑量子态,并列举该材料体系其他研究方向及目前存在的问题.最后,总结并展望MnBi_(2)Te_(4)的下一步研究,期望为相关领域人员的研究提供一定参考价值. 展开更多
关键词 本征磁性拓扑绝缘体 MnBi_(2)te_(4) 拓扑量子态
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Er掺杂MnBi_(2)Te_(4)晶体生长及其微结构研究
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作者 欧鑫林 王进 赵可 《人工晶体学报》 CAS 北大核心 2023年第9期1635-1640,共6页
MnBi_(2)Te_(4)是首次被发现的一种本征磁性拓扑绝缘体,具有重要的研究意义。本文通过在MnBi_(2)Te_(4)晶体中进行稀土元素掺杂,合成了Er掺杂MnBi_(2)Te_(4)晶体,Er原子进入晶格并取代Mn位。在晶体制备过程中,考虑到目前晶体制备工艺周... MnBi_(2)Te_(4)是首次被发现的一种本征磁性拓扑绝缘体,具有重要的研究意义。本文通过在MnBi_(2)Te_(4)晶体中进行稀土元素掺杂,合成了Er掺杂MnBi_(2)Te_(4)晶体,Er原子进入晶格并取代Mn位。在晶体制备过程中,考虑到目前晶体制备工艺周期较长,生成物存在Bi_(2)Te_(3)助熔剂等杂质的问题,对晶体制备工艺进行了优化探索。XRD测试结果表明,利用改进工艺制备的Er掺杂MnBi_(2)Te_(4)晶体结晶性能良好,不含杂质相。磁电输运测量结果显示,少量Er掺杂MnBi_(2)Te_(4)晶体的磁性增强,掺杂样品在25.2 K发生反铁磁相变。使用原子力显微镜对Er掺杂MnBi_(2)Te_(4)晶体层间距进行了研究,发现层间距为单层MnBi_(2)Te_(4)的整数倍。通过拉曼测试研究了Er掺杂MnBi_(2)Te_(4)晶体声子振动模式,结果表明,Er掺杂是调节MnBi_(2)Te_(4)磁性的一种可行方法。 展开更多
关键词 MnBi_(2)te_(4) 反铁磁拓扑绝缘体 Er掺杂 结晶性 磁性 声子振动模式
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硫系相变材料Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜相变速度及电学输运性质研究
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作者 刘文强 仝亮 +7 位作者 徐岭 刘妮 杨菲 廖远宝 刘东 徐骏 马忠元 陈坤基 《固体电子学研究与进展》 CAS CSCD 北大核心 2011年第3期310-314,共5页
利用磁控溅射方法制备了Ge_1Sb_2Te_4和Ge_2Sb_2Te_5两种相变存贮材料的薄膜。原位X射线衍射(XRD)的结果表明,随着退火温度的升高,Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜都逐步晶化,材料结构发生了从非晶态到面心立方结构、再到六角密堆结构... 利用磁控溅射方法制备了Ge_1Sb_2Te_4和Ge_2Sb_2Te_5两种相变存贮材料的薄膜。原位X射线衍射(XRD)的结果表明,随着退火温度的升高,Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜都逐步晶化,材料结构发生了从非晶态到面心立方结构、再到六角密堆结构的转变。由衍射峰的半宽高可以看出,在达到第一次相变温度后,Ge_2Sb_2Te_5比Ge_1Sb_2Te_4结晶更快。原位变温电阻测量的结果显示,在相同的升温速率下,Ge_2Sb_2Te_5的热致晶化速率更快。而且Ge_2Sb_2Te_5非晶态与晶态的电阻差值更高。故Ge_2Sb_2Te_5比Ge_1Sb_2Te_4更适合作为相变存储器的材料。另外,对两种薄膜的电学输运性质进行了研究,霍尔效应的测量表明,Ge_1Sb_2Te_4材料电导的变化是迁移率和载流子浓度共同作用的结果,而Ge_2Sb_2Te_5材料电导的变化主要是由于载流子浓度的变化引起。 展开更多
关键词 相变存贮材料 Ge_1Sb_2te_4 Ge_2Sb_2te_5
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Superconductivity in CuIr_(2-x)Al_(x)Te_(4) telluride chalcogenides
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作者 严冬 曾令勇 +6 位作者 曾宜杰 林一石 殷俊杰 王猛 王熠华 姚道新 罗惠霞 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第3期538-544,共7页
The relationship between charge-density-wave(CDW) and superconductivity(SC), two vital physical phases in condensed matter physics, has always been the focus of scientists’ research over the past decades. Motivated b... The relationship between charge-density-wave(CDW) and superconductivity(SC), two vital physical phases in condensed matter physics, has always been the focus of scientists’ research over the past decades. Motivated by this research hotspot, we systematically studied the physical properties of the layered telluride chalcogenide superconductors CuIr_(2-x)Al_(x)Te_(4)(0 ≤x≤ 0.2). Through the resistance and magnetization measurements, we found that the CDW order was destroyed by a small amount of Al doping. Meanwhile, the superconducting transition temperature(T_(c)) kept changing with the change of doping amount and rose towards the maximum value of 2.75 K when x = 0.075. The value of normalized specific heat jump(△C/γT_(c)) for the highest T_(c) sample CuIr_(2-x)Al_(x)Te_(4)was 1.53, which was larger than the BCS value of 1.43 and showed the bulk superconducting nature. In order to clearly show the relationship between SC and CDW states,we propose a phase diagram of T_(c) vs. doping content. 展开更多
关键词 layered telluride chalcogenide SUPERCONDUCTIVITY CHARGE-DENSITY-WAVE CuIr_(2-x)Al_(x)te_(4)
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Band modification towards high thermoelectric performance of SnSb_(2)Te_(4) with strong anharmonicity driven by cation disorder
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作者 Hong Wu Peng Chen +13 位作者 Zizhen Zhou De Zhang Xiangnan Gong Bin Zhang Yang Zhou Kunling Peng Yanci Yan Guiwen Wang Jun Liu Dengfeng Li Guang Han Guoyu Wang Xu Lu Xiaoyuan Zhou 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2023年第23期140-148,共9页
As a typical (IV–VI)_(x)(V_(2)VI_(3))_(y) compound, the tetradymite-like layered SnSb_(2)Te_(4) -based compounds have attracted increasing attention in the thermoelectric community owing to the intrinsically low latt... As a typical (IV–VI)_(x)(V_(2)VI_(3))_(y) compound, the tetradymite-like layered SnSb_(2)Te_(4) -based compounds have attracted increasing attention in the thermoelectric community owing to the intrinsically low lattice thermal conductivity. Nevertheless, the effect of cations disorder on the inherent physical characteristics remains puzzling, and its inferior Seebeck coefficient is the bottleneck to achieving high thermoelectric performance. In this work, the thermoelectric properties of polycrystalline In_(x)Sn_(1−x)Sb_(2)(Te_(1−y)Se_(y))_(4) (0≤x≤0.1,0≤y≤0.15) samples are comprehensively investigated. In conjunction with the calculated band structure and experimental results, the Seebeck coefficient and power factor are markedly improved after the introduction of indium and selenium, which originates from the combined effects of the emergent resonant states and converged valence bands along with optimal carrier concentration. Additionally, compared with the ordered lattice structure, the disordered cations occupancy in SnSb_(2)Te_(4) further strengthens lattice anharmonicity and reduces phonon group velocity verified by first-principles calculations, securing intrinsically low lattice thermal conductivity. Finally, a record zT value of ∼0.6 at 670 K and an average zT of ∼0.4 between 320 and 720 K are obtained in the In0.1 Sn0.9 Sb2 Te3.4 Se0.6 sample, being one of the highest zT values among SnSb2 Te4 -based materials. This work not only demonstrates that SnSb2 Te4 -based compounds are promising thermoelectric candidates, but also provides guidance for the promotion of thermoelectric performance in a broad temperature range. 展开更多
关键词 THERMOELECTRIC SnSb_(2)te_(4) Lattice anharmonicity Resonant level Band Convergence
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Spin-flop transition and Zeeman effect of defect-localized bound states in the antiferromagnetic topological insulator MnBi_(2)Te_(4)
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作者 Guojian Qian Mengzhu Shi +6 位作者 Hui Chen Shiyu Zhu Jiawei Hu Zihao Huang Yuan Huang Xian-Hui Chen Hong-Jun Gao 《Nano Research》 SCIE EI CSCD 2023年第1期1101-1106,共6页
The correlation of surface impurity states with the antiferromagnetic ground states is crucial for understanding the formation of the topological surface state in the antiferromagnetic topological insulators MnBi_(2)T... The correlation of surface impurity states with the antiferromagnetic ground states is crucial for understanding the formation of the topological surface state in the antiferromagnetic topological insulators MnBi_(2)Te_(4).By using low-temperature scanning tunneling microscopy and spectroscopy,we observed a localized bound state around the Mn-Bi antisite defect at the Teterminated surface of the antiferromagnetic topological insulator MnBi_(2)Te_(4).When applying a magnetic field perpendicular to the surface(Bz)from–1.5 to 3.0 T,the bound state shifts linearly to a lower energy with increasing Bz,which is attributed to the Zeeman effect.Remarkably,when applying a large range of Bz from–8.0 to 8.0 T,the magnetic field induced reorientation of surface magnetic moments results in an abrupt jump in the local density of states(LDOS),which is characterized by LDOSchange-ratio■quantitatively.Interestingly,two asymmetric critical field,–2.0 and 4.0 T determined by the two peaks in■are observed,which is consistent with simulated results according to a Mills-model,describing a surface spin flop transition(SSF).Our results provide a new flatform for studying the interplay between magnetic order and topological phases in magnetic topological materials. 展开更多
关键词 antiferromagnetic topological insulators MnBi_(2)te_(4) scanning tunneling microscope Mills model surface spin flop transition
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自旋依赖强度可调谐的相变超构透镜
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作者 李洁 田喜敏 +3 位作者 许军伟 武婷 陈霆枫 旷金芝 《红外与激光工程》 EI CSCD 北大核心 2022年第11期224-231,共8页
超表面是一种基于亚波长各向异性单元结构的超薄平面光学器件,能够在微观尺度下调制电磁波相位、偏振和振幅等,从而实现波前的任意调控。超构透镜作为超表面走向实用化的重要代表,凭借其超强的光波操控能力、超紧凑结构、多功能性及与... 超表面是一种基于亚波长各向异性单元结构的超薄平面光学器件,能够在微观尺度下调制电磁波相位、偏振和振幅等,从而实现波前的任意调控。超构透镜作为超表面走向实用化的重要代表,凭借其超强的光波操控能力、超紧凑结构、多功能性及与半导体工艺兼容等突出优点,引起了研究学者的极大兴趣。然而,已报道的超构透镜受限于相位分布设计,难以同时实现偏振复用及强度可调谐聚焦功能;且结构一旦确定,其电磁性能就被锁定,在灵活调制电磁波方面受到很大限制。为此,文中从各向异性单元结构的设计和优化入手,协同PB相位和传输相位,设计了两种能够在不同空间取向(横向和纵向)上实现自旋分裂的Ge_(2)Sb2Se_(4)Te_(1)(GSST)相变超构透镜。通过改变入射圆偏振光的椭偏度,两超构透镜均可实现强度可调谐聚焦性能;通过调控相变材料Ge_(2)Sb2Se_(4)Te_(1)从非晶态逐渐转变为结晶态,两超构透镜均可实现聚焦性能的连续调谐并最终达到“ON”和“OFF”的动态切换。所设计的自旋依赖强度可调谐相变超构透镜有望在多成像系统、机器视觉和显微成像等领域发挥重要作用。 展开更多
关键词 光学超表面 超构透镜 相变材料Ge_(2)Sb2Se_(4)te_(1) 自旋依赖 强度可调谐
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