Epitaxial （0001）-oriented Zn1-xCoxO （x= 0.01, 0.05 and 0.1） thin films were grown on c-sapphire substrates by pulsed laser deposition. The XRD analysis, optical transmittance and XPS measurements revealed that the...Epitaxial （0001）-oriented Zn1-xCoxO （x= 0.01, 0.05 and 0.1） thin films were grown on c-sapphire substrates by pulsed laser deposition. The XRD analysis, optical transmittance and XPS measurements revealed that the Co2＋ substituted Zn2＋ ions were incorporated into the lattice of ZnO in Zn1-xCoxO thin films. The electrical properties measurements revealed that the Co concentration had a non- monotonic influence on the electrical properties of the Zn1-xCoxO thin films due to the defects resulted from imperfections induced by Co substitution. The resistivity remarkably increased and the carrier concentration remarkably decreased in Zn1-x CoxO thin films after oxygen annealing at 600 ℃ under 15 Pa O2 pressure for 60 mins. Room-temperature ferromagnetic was observed and the ferromagnetic Co amount was smaller than the nominal Co concentration for Zn1-xCoxO samples before oxygen annealing. After oxygen annealing, the Zn1-x CoxO thin films exhibited paramagnetic behavior. It is suggested that the room-temperature ferromagnetic ofZn1-x CoxO thin films may attribute to defects or carriers induced mechanism.展开更多
A series of nanocomposite thin films, composed of Nd2Fe14B and α-Fe, has been prepared by DC-magnetron sputtering combined ion beam sputtering onto Si (100) substrates. The effects of post annealing on the microstruc...A series of nanocomposite thin films, composed of Nd2Fe14B and α-Fe, has been prepared by DC-magnetron sputtering combined ion beam sputtering onto Si (100) substrates. The effects of post annealing on the microstructure and magnetic properties of [NdFeB/α-Fe/NdFeB]-type thin films have been investigated. The X-ray diffraction (XRD) study showed that annealing of the films for 30 min at temperatures 550, 600, 650, 700 ℃ resulted in the appearance of diffraction peaks, characteristic for Nd2Fe14B tetragonal structure, α-Fe and Nd2O3 phases. The investigation using the Vibrating Sample Magnetometer (VSM) with a maximum applied field of 2 T indicated that with the increase of the annealing temperature, the magnetic properties of the multilayer films were improved and reached peak value at 650 ℃ (Hci=41.72 kA·m-1, Mr/Ms=0.4, (BH)max=30.35 kJ·m-3), after which the magnetic properties were decreased greatly. Along with the increase of the thickness of α-Fe layer from Tα-Fe>16 nm, the coercivity Hci, saturation magnetization Ms, and remanence ratio Mr/Ms all declined. As the Atomic Force Microscope (AFM) indicated, after being annealed at 650 ℃ for 30 min, the sample was showed fine surface morphology with grain size 60 nm≤dα-Fe≤80 nm and 100 nm≤dNdFeB≤150 nm.展开更多
Yttria （Y） dispersed ferrum （Fe） films were prepared by a double-target magnetron co-sputtering method. Vacuum annealing and xenon ion irradiation were conducted to investigate the influence on the magnetic and me...Yttria （Y） dispersed ferrum （Fe） films were prepared by a double-target magnetron co-sputtering method. Vacuum annealing and xenon ion irradiation were conducted to investigate the influence on the magnetic and mechanical properties of the films. The crystal grain growth mechanism and second phase precipitation mechanism were conducted simultaneously in the vacuum annealing process. These two effects led to an opposite variation of nano-hardness and coercivity in the films. Xenon ion irradiation played a role in rapid annealing, which also affected the magnetic performance of the yttria dispersed ferrum films.展开更多
FePt films with a high degree of order S of the L10 structure （S 〉 0.90） and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition ...FePt films with a high degree of order S of the L10 structure （S 〉 0.90） and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition of ZnO and a successive rapid thermal annealing （RTA） process. The optimum condition to prepare high-ordering L10 FePtZnO films is 20 vol% ZnO addition and 450 ℃ annealing. The effect of the ZnO additive on the ordering process of the L10 FePtZnO films is discussed. In the annealing process, Zn atoms move to the film surface and evaporate. The motion of the Zn atoms accelerates the intergrain exchange and decreases the ordering temperature.展开更多
Dense, adhesive and uniform Sm-Co alloy films were prepared by potentiostatic electrolysis on copper substrates in urea-acetamide-NaBr-KBr melt at 353 K, which were observed by SEM. The electroreduction of Co2+ and Sm...Dense, adhesive and uniform Sm-Co alloy films were prepared by potentiostatic electrolysis on copper substrates in urea-acetamide-NaBr-KBr melt at 353 K, which were observed by SEM. The electroreduction of Co2+ and Sm3+ was investigated by cyclic voltammetry. The reduction of Co2+ is an irreversible process. Sm3+ can not be reduced alone, but Sm-Co can be co-deposited by induced deposition. The films could be crystallized by heat-treatment at different temperature from 723 to 923 K under Ar atmosphere. The annealed time was chosen as 30 s. The phases of deposited and annealed films were investigated by XRD. The content of Sm was analyzed by Inductive Coupled Plasma Emission Spectrometer (ICPES). The hysteresis loops of the Sm-Co alloy films have been measured by Vibrating Sample Magnetometer (VSM). The experimental results reveal that, the heat-treatment has important influence on coercive field Hc and remanent squareness S of Sm-Co alloy films; the deposited Sm-Co alloy films are amorphous, while the annealed those become polycrystalline; in addition, the magnetocrystalline anisotropy and preferring orientation of films depend strongly on the contents of crystal phases.展开更多
基金Funded by New Century Excellent Talents in University(No.NCET-10-0662)International Science and Technology Cooperation Project of Hubei Province(No.2010BFA017)International Science&Technology Cooperation Program of China(No.2011DFA52650)
文摘Epitaxial （0001）-oriented Zn1-xCoxO （x= 0.01, 0.05 and 0.1） thin films were grown on c-sapphire substrates by pulsed laser deposition. The XRD analysis, optical transmittance and XPS measurements revealed that the Co2＋ substituted Zn2＋ ions were incorporated into the lattice of ZnO in Zn1-xCoxO thin films. The electrical properties measurements revealed that the Co concentration had a non- monotonic influence on the electrical properties of the Zn1-xCoxO thin films due to the defects resulted from imperfections induced by Co substitution. The resistivity remarkably increased and the carrier concentration remarkably decreased in Zn1-x CoxO thin films after oxygen annealing at 600 ℃ under 15 Pa O2 pressure for 60 mins. Room-temperature ferromagnetic was observed and the ferromagnetic Co amount was smaller than the nominal Co concentration for Zn1-xCoxO samples before oxygen annealing. After oxygen annealing, the Zn1-x CoxO thin films exhibited paramagnetic behavior. It is suggested that the room-temperature ferromagnetic ofZn1-x CoxO thin films may attribute to defects or carriers induced mechanism.
基金Project supported by Natural Science Foundation of Shanxi Province (20021067)
文摘A series of nanocomposite thin films, composed of Nd2Fe14B and α-Fe, has been prepared by DC-magnetron sputtering combined ion beam sputtering onto Si (100) substrates. The effects of post annealing on the microstructure and magnetic properties of [NdFeB/α-Fe/NdFeB]-type thin films have been investigated. The X-ray diffraction (XRD) study showed that annealing of the films for 30 min at temperatures 550, 600, 650, 700 ℃ resulted in the appearance of diffraction peaks, characteristic for Nd2Fe14B tetragonal structure, α-Fe and Nd2O3 phases. The investigation using the Vibrating Sample Magnetometer (VSM) with a maximum applied field of 2 T indicated that with the increase of the annealing temperature, the magnetic properties of the multilayer films were improved and reached peak value at 650 ℃ (Hci=41.72 kA·m-1, Mr/Ms=0.4, (BH)max=30.35 kJ·m-3), after which the magnetic properties were decreased greatly. Along with the increase of the thickness of α-Fe layer from Tα-Fe>16 nm, the coercivity Hci, saturation magnetization Ms, and remanence ratio Mr/Ms all declined. As the Atomic Force Microscope (AFM) indicated, after being annealed at 650 ℃ for 30 min, the sample was showed fine surface morphology with grain size 60 nm≤dα-Fe≤80 nm and 100 nm≤dNdFeB≤150 nm.
基金support by the National Natural Science Foundation of China (No. 61076003)the National Basic Research and Development Program of China (Nos. 2010CB731600 and 2010CB832900)
文摘Yttria （Y） dispersed ferrum （Fe） films were prepared by a double-target magnetron co-sputtering method. Vacuum annealing and xenon ion irradiation were conducted to investigate the influence on the magnetic and mechanical properties of the films. The crystal grain growth mechanism and second phase precipitation mechanism were conducted simultaneously in the vacuum annealing process. These two effects led to an opposite variation of nano-hardness and coercivity in the films. Xenon ion irradiation played a role in rapid annealing, which also affected the magnetic performance of the yttria dispersed ferrum films.
文摘FePt films with a high degree of order S of the L10 structure （S 〉 0.90） and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition of ZnO and a successive rapid thermal annealing （RTA） process. The optimum condition to prepare high-ordering L10 FePtZnO films is 20 vol% ZnO addition and 450 ℃ annealing. The effect of the ZnO additive on the ordering process of the L10 FePtZnO films is discussed. In the annealing process, Zn atoms move to the film surface and evaporate. The motion of the Zn atoms accelerates the intergrain exchange and decreases the ordering temperature.
基金the National Key Project for Basic Research of China (20005CB623605)NSF of Fujian Province(A0510013)
文摘Dense, adhesive and uniform Sm-Co alloy films were prepared by potentiostatic electrolysis on copper substrates in urea-acetamide-NaBr-KBr melt at 353 K, which were observed by SEM. The electroreduction of Co2+ and Sm3+ was investigated by cyclic voltammetry. The reduction of Co2+ is an irreversible process. Sm3+ can not be reduced alone, but Sm-Co can be co-deposited by induced deposition. The films could be crystallized by heat-treatment at different temperature from 723 to 923 K under Ar atmosphere. The annealed time was chosen as 30 s. The phases of deposited and annealed films were investigated by XRD. The content of Sm was analyzed by Inductive Coupled Plasma Emission Spectrometer (ICPES). The hysteresis loops of the Sm-Co alloy films have been measured by Vibrating Sample Magnetometer (VSM). The experimental results reveal that, the heat-treatment has important influence on coercive field Hc and remanent squareness S of Sm-Co alloy films; the deposited Sm-Co alloy films are amorphous, while the annealed those become polycrystalline; in addition, the magnetocrystalline anisotropy and preferring orientation of films depend strongly on the contents of crystal phases.
