In this work, the effects of atomic-layer-deposited(ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si subst...In this work, the effects of atomic-layer-deposited(ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates have been investigated. The results of electrical measurements and X-ray photoelectron sepectroscopy(XPS) showed that 1-nm-thick Al2O3 passivation layer is optimized to obtain excellent electrical and interfacial properties for HfYO/Si gate stack. Then, the metal-oxide-semiconductor capacitors with HfYO/1-nm Al2O3/Si/Al gate stack were fabricated and annealed at different temperatures in forming gas(95% N2+5% H2). Capacitance-voltage(C-V) and current density-voltage(J-V) characteristics showed that the 250℃-annealed HYO high-k gate dielectric thin film demonstrated the lowest border trapped oxide charge density(-3.3 × 1010 cm-2), smallest gate-leakage current(2.45 × 10-6 A/cm2 at 2 V)compared with other samples. Moreover, the annealing temperature dependent leakage current conduction mechanism for Al/HfYO/Al2O3/Si/Al MOS capacitor has been investigated systematically. Detailed electrical measurements reveal that Poole-Frenkle emission is the main dominant emission in the region of low and medium electric fields while direct tunneling is dominant conduction mechanism at high electric fields.展开更多
Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In...Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In2O3：Sn （ITO） thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.展开更多
Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelect...Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.展开更多
The influences of rare earth elements（cerium and lanthanum） on the microstructure and phases of Al-3.0 wt%Mg alloys used for electromagnetic shielding wire were characterized by scanning electron microscopy（SEM）, ...The influences of rare earth elements（cerium and lanthanum） on the microstructure and phases of Al-3.0 wt%Mg alloys used for electromagnetic shielding wire were characterized by scanning electron microscopy（SEM）, energy-dispersive spectroscopy（EDS）, X-ray diffraction（XRD） and differential scanning calorimetry（DSC）. The mechanical properties and electrical resistivity were also investigated. The results indicated that a certain content of rare earth could improve the purification of the aluminum molten, enhance the strength, and reduce the electrical resistivity of Al-3.0 wt%Mg alloys. The strength reached the top value when RE content was 0.3 wt% while the alloy with 0.2 wt% RE addition had the smallest electrical resistivity. The elongation varied little when RE addition was no more than 0.2 wt%. But the excessive addition of rare earth would be harmful to the microstructure and properties of Al-3.0 wt%Mg alloys.展开更多
采用快速液相烧结法制备Bi_(1-x)Pr_(x)Fe_(1-x)Ti_(x)O_(3)(x=0.00、0.03、0.06、0.12)系列多铁陶瓷样品,研究Pr-Ti共掺杂对BiFe O_(3)结构、缺陷、电学和磁学特性的影响。XRD分析结果表明:所有样品均为菱方钙钛矿结构,Pr-Ti共掺杂可...采用快速液相烧结法制备Bi_(1-x)Pr_(x)Fe_(1-x)Ti_(x)O_(3)(x=0.00、0.03、0.06、0.12)系列多铁陶瓷样品,研究Pr-Ti共掺杂对BiFe O_(3)结构、缺陷、电学和磁学特性的影响。XRD分析结果表明:所有样品均为菱方钙钛矿结构,Pr-Ti共掺杂可有效抑制杂相生成,当掺杂量高于0.06时杂相基本消失,共掺杂引起结构畸变。正电子湮没寿命谱测试结果表明:所有样品中均存在阳离子空位型缺陷,空位尺寸和浓度均随Pr-Ti掺杂量增加而增大。电学和磁学性能测试结果表明:适量Pr-Ti共掺杂可有效提高Bi Fe O_(3)的介电、铁电和磁学性能。综合上述结果,认为BiFeO_(3)多铁性能的改善可能是由于Pr-Ti共掺杂引起晶格畸变、减少氧空位浓度、改变阳离子空位浓度等多种原因引起。展开更多
基金financially supported by the National Natural Science Foundation of China (Nos. 11774001 and 51572002)the Open Fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University (S01003101)+2 种基金Top talents in disciplines (Specialties) of universities in Anhui Province (gxbjZD2016006)the Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China (No. J05015131)the Anhui Provincial Natural Science Foundation (No. 1608085MA06)
文摘In this work, the effects of atomic-layer-deposited(ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates have been investigated. The results of electrical measurements and X-ray photoelectron sepectroscopy(XPS) showed that 1-nm-thick Al2O3 passivation layer is optimized to obtain excellent electrical and interfacial properties for HfYO/Si gate stack. Then, the metal-oxide-semiconductor capacitors with HfYO/1-nm Al2O3/Si/Al gate stack were fabricated and annealed at different temperatures in forming gas(95% N2+5% H2). Capacitance-voltage(C-V) and current density-voltage(J-V) characteristics showed that the 250℃-annealed HYO high-k gate dielectric thin film demonstrated the lowest border trapped oxide charge density(-3.3 × 1010 cm-2), smallest gate-leakage current(2.45 × 10-6 A/cm2 at 2 V)compared with other samples. Moreover, the annealing temperature dependent leakage current conduction mechanism for Al/HfYO/Al2O3/Si/Al MOS capacitor has been investigated systematically. Detailed electrical measurements reveal that Poole-Frenkle emission is the main dominant emission in the region of low and medium electric fields while direct tunneling is dominant conduction mechanism at high electric fields.
基金National Natural Science Foundation of China (50471004)
文摘Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In2O3：Sn （ITO） thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.
基金supported by the National Program for Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607)the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048)+2 种基金the National Science and Technology Major Projects (Grant No. 2009ZX02035)the State Key Laboratory of ASIC and System Project (Grant No. 11MS017)the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001)
文摘Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.
基金Funded by the National Natural Science Foundation of China(No.51379070)the Fundamental Research Funds for the Central Universities(No.2017B40314)
文摘The influences of rare earth elements（cerium and lanthanum） on the microstructure and phases of Al-3.0 wt%Mg alloys used for electromagnetic shielding wire were characterized by scanning electron microscopy（SEM）, energy-dispersive spectroscopy（EDS）, X-ray diffraction（XRD） and differential scanning calorimetry（DSC）. The mechanical properties and electrical resistivity were also investigated. The results indicated that a certain content of rare earth could improve the purification of the aluminum molten, enhance the strength, and reduce the electrical resistivity of Al-3.0 wt%Mg alloys. The strength reached the top value when RE content was 0.3 wt% while the alloy with 0.2 wt% RE addition had the smallest electrical resistivity. The elongation varied little when RE addition was no more than 0.2 wt%. But the excessive addition of rare earth would be harmful to the microstructure and properties of Al-3.0 wt%Mg alloys.
文摘采用快速液相烧结法制备Bi_(1-x)Pr_(x)Fe_(1-x)Ti_(x)O_(3)(x=0.00、0.03、0.06、0.12)系列多铁陶瓷样品,研究Pr-Ti共掺杂对BiFe O_(3)结构、缺陷、电学和磁学特性的影响。XRD分析结果表明:所有样品均为菱方钙钛矿结构,Pr-Ti共掺杂可有效抑制杂相生成,当掺杂量高于0.06时杂相基本消失,共掺杂引起结构畸变。正电子湮没寿命谱测试结果表明:所有样品中均存在阳离子空位型缺陷,空位尺寸和浓度均随Pr-Ti掺杂量增加而增大。电学和磁学性能测试结果表明:适量Pr-Ti共掺杂可有效提高Bi Fe O_(3)的介电、铁电和磁学性能。综合上述结果,认为BiFeO_(3)多铁性能的改善可能是由于Pr-Ti共掺杂引起晶格畸变、减少氧空位浓度、改变阳离子空位浓度等多种原因引起。
