To address the serious pollution of heavy metals in AMD,the difficulty and the high cost of treatment,Fe_(3)O_(4)-L was prepared by the chemical co-precipitation method.Based on the single-factor and RSM,the effects o...To address the serious pollution of heavy metals in AMD,the difficulty and the high cost of treatment,Fe_(3)O_(4)-L was prepared by the chemical co-precipitation method.Based on the single-factor and RSM,the effects of particle size,total Fe concentration,the molar ratio of Fe^(2+)to Fe^(3+)and water bath temperature on the removal of AMD by Fe_(3)O_(4)-L prepared by chemical co-precipitation method were analyzed.Static adsorption experiments were conducted on Cu^(2+),Zn^(2+)and Pb^(2+)using Fe_(3)O_(4)-L prepared under optimal conditions as adsorbents.The adsorption properties and mechanisms were analyzed by combining SEM-EDS,XRD and FTIR for characterization.The study showed that the effects of particle size,total Fe concentration and the molar ratio of Fe^(2+)to Fe^(3+)are larger.Obtained by response surface optimization analysis,the optimum conditions for the preparation of Fe_(3)O_(4)-L were a particle size of 250 mesh,a total Fe concentration of 0.5 mol/L,and a molar ratio of Fe^(2+)to Fe^(3+)of 1:2.Under these conditions,the removal rates of Cu^(2+),Zn^(2+),and Pb^(2+)were 94.52%,88.49%,and 96.69%respectively.The adsorption of Cu^(2+),Zn^(2+)and Pb^(2+)by Fe_(3)O_(4)-L prepared under optimal conditions reached equilibrium at 180 min,with removal rates of 99.99%,85.27%,and 97.48%,respectively.The adsorption reaction of Fe_(3)O_(4)-L for Cu^(2+)and Zn^(2+)is endothermic,while that for Pb^(2+)is exothermic.Fe_(3)O_(4)-L can still maintain a high adsorption capacity after five cycles of adsorption-desorption experiments.Cu^(2+),Zn^(2+)and Pb^(2+)mainly exist as CuFe_(2)O_(4),Zn(OH)2,ZnFe_(2)O_(4)and PbS after being adsorbed by Fe_(3)O_(4)-L,which is the result of the combination of physical diffusion,ion exchange and surface complexation reaction.展开更多
The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The result...The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue val-ues. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect be-cause of the BZT film’s ferroelectric polarization.展开更多
基金This work was supported by the National Natural Science Foundation of China(41672247)Liaoning Province’s“Program for Promoting Liaoning Talents”(XLYC1807159)+1 种基金the Discipline Innovation Team of Liaoning Technical University(LNTU20TD-21)the Liaoning Provincial Department of Education(LJKZ0324).
文摘To address the serious pollution of heavy metals in AMD,the difficulty and the high cost of treatment,Fe_(3)O_(4)-L was prepared by the chemical co-precipitation method.Based on the single-factor and RSM,the effects of particle size,total Fe concentration,the molar ratio of Fe^(2+)to Fe^(3+)and water bath temperature on the removal of AMD by Fe_(3)O_(4)-L prepared by chemical co-precipitation method were analyzed.Static adsorption experiments were conducted on Cu^(2+),Zn^(2+)and Pb^(2+)using Fe_(3)O_(4)-L prepared under optimal conditions as adsorbents.The adsorption properties and mechanisms were analyzed by combining SEM-EDS,XRD and FTIR for characterization.The study showed that the effects of particle size,total Fe concentration and the molar ratio of Fe^(2+)to Fe^(3+)are larger.Obtained by response surface optimization analysis,the optimum conditions for the preparation of Fe_(3)O_(4)-L were a particle size of 250 mesh,a total Fe concentration of 0.5 mol/L,and a molar ratio of Fe^(2+)to Fe^(3+)of 1:2.Under these conditions,the removal rates of Cu^(2+),Zn^(2+),and Pb^(2+)were 94.52%,88.49%,and 96.69%respectively.The adsorption of Cu^(2+),Zn^(2+)and Pb^(2+)by Fe_(3)O_(4)-L prepared under optimal conditions reached equilibrium at 180 min,with removal rates of 99.99%,85.27%,and 97.48%,respectively.The adsorption reaction of Fe_(3)O_(4)-L for Cu^(2+)and Zn^(2+)is endothermic,while that for Pb^(2+)is exothermic.Fe_(3)O_(4)-L can still maintain a high adsorption capacity after five cycles of adsorption-desorption experiments.Cu^(2+),Zn^(2+)and Pb^(2+)mainly exist as CuFe_(2)O_(4),Zn(OH)2,ZnFe_(2)O_(4)and PbS after being adsorbed by Fe_(3)O_(4)-L,which is the result of the combination of physical diffusion,ion exchange and surface complexation reaction.
基金Supported by Natural Science Foundation of Hubei Province (Grant No. 2004ABA082)
文摘The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue val-ues. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect be-cause of the BZT film’s ferroelectric polarization.
