Abnormality Degree Detection Method Using Negative Potential Field Group Detectors

Online monitoring methods have been widely used in many major devices, however the normal and abnormal states of equipment are estimated mainly based on the monitoring results whether monitored parameters exceed the setting thresholds. Using these monitoring methods may cause serious false positive or false negative results. In order to precisely monitor the state of equipment, the problem of abnormality degree detection without fault sample is studied with a new detection method called negative potential field group detectors（NPFG-detectors）. This method achieves the quantitative expression of abnormality degree and provides the better detection results compared with other methods. In the process of Iris data set simulation, the new algorithm obtains the successful results in abnormal detection. The detection rates for 3 types of Iris data set respectively reach 100%, 91.6%, and 95.24% with 50% training samples. The problem of Bearing abnormality degree detection via an abnormality degree curve is successfully solved.

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.

立体定向放射治疗小射野探测器研究进展

由于侧向带电粒子平衡的缺失、主光子源的遮挡,以及在小射野测量中可以选择的探测器有限,对现代放射治疗技术进行小野剂量学测定提出诸多挑战,这些挑战极大影响了剂量学的准确性。过量辐射事故表明对小野剂量学测定的适当方法了解不足。本综述介绍了目前适合在小野剂量学测量中应用的各类型探测器,包括微型电离室、半导体探测器、金刚石探测器、塑料闪烁体探测器、放射变色胶片、热释光探测器、放射光致发光玻璃探测器、光受激发光探测器、聚合物凝胶剂量计,为物理师在选择小野探测器时提供参考。

用于氚产生率在线测量的小型背靠背锂玻璃探测器

为了实现强伽马场环境下的造氚率在线测量,研制了小型“背靠背”6Li/7Li玻璃探测器。每块锂玻璃闪烁体的尺寸为3.0 mm×3.0 mm×0.4 mm,闪烁体之间及侧面采用0.5 mm二氧化钛作为反射层,整体尺寸为4.0 mm×4.0 mm×1.3 mm。7Li玻璃探测器测量伽马产生的信号作为6Li玻璃探测器的伽马本底扣除。通过对标准60Co源的伽马射线脉冲幅度谱测量,验证了两个闪烁体对伽马场响应的一致性;在反应堆热中子孔道处和252Cf中子源直照等强伽马环境下测量了脉冲幅度谱,获得的中子伽马信噪比都大于1,表明可以有效扣除伽马本底。验证实验研制的锂玻璃探测器在强伽马场环境下仍能有效甄别伽马,可用于聚变堆和聚变-裂变混合堆实验包层模块内造氚率高精度在线测量。

基于磁传感器阵列的管道移位变形内检测

海底管道的结构变形会增加管道断裂风险,从而造成极大的经济损失。本文提出一种基于球形内检测器和多通道磁传感器阵列的管道移位变形检测方法。根据磁机械效应,分析管道移位变形导致的管壁应力及管道内磁通密度变化规律。设计了检测器结构布局及磁阵列采集方案,实现了管道内空间旋转磁通密度的高覆盖率采样。设计算法将旋转磁信号转换为管道坐标系下的平动磁信号,提取管道内等高线的磁数据,实现了多通道磁信息融合,提高了磁异常检出率。最后,开展了管道竖向加载和等效横向加载等移位变形的内检测试验。结果表明,管道在纵向受力变形状态下,管道内等高线上磁通密度纵向分量的离散度降低136.1μT;管道在等效横向受力变形状态下,管道内等高线上磁通密度横向分量的离散度降低123.1μT;球形内检测器所测得的磁通密度离散度能够反映出管道不同方向的移位变形,且管道变形越大,磁通密度离散度越小。

一种用于个人剂量当量H_(p)(0.07)监测的剂量计研制

鉴于目前国内生产的个人剂量当量H_(p)(0.07)剂量计对低能β辐射响应较差,以及对β、γ混合场中H_(p)(0.07)剂量测量误差较大的问题,基于LiF:Mg,Cu,P热释光探测器,结合模拟计算,研制了一种ZF-P7型H_(p)(0.07)剂量计。其性能指标测试结果表明:对于最大能量为225 keV~2.274 MeV的β射线,响应在0.67~0.95之间;对16 keV~1 250 keV的X、γ射线,响应在0.66~1.45之间;在剂量100μSv~1.2 Sv范围内,剂量线性在0.91~1.10范围内;在入射角为0~±60°,对65 keV X射线的角度响应在0.99~1.09范围之内,对^(85)Kr β射线角度响应在0.94~1.11范围之内。经实验验证,ZF-P7型H_(p)(0.07)剂量计的各项指标均满足行业标准EJ/T 1178—2005和检定规程JJG(军工)37—2014要求。由于该ZF-P7型剂量计性能优良,特别是对不同能量的X、γ、β辐射响应较好,可解决混合辐射场作业人员H_(p)(0.07)的剂量准确监测难题,将来可以广泛应用于辐射工作人员的H_(p)(0.07)剂量监测中。

场效应晶体管太赫兹探测器在太赫兹成像领域的研究进展(下)

太赫兹(Terahertz,THz)波具有能量低、穿透性强、分辨率高等特性,因而THz成像技术在安全检测、医学诊断、无损探伤等领域具有广阔的应用前景。THz探测器作为THz成像系统的重要组成部分,其性能对成像分辨率、成像速度等有重要影响。由于具备可室温工作、易大面积集成、响应速度快等特性,场效应晶体管(Field Effect Transistor,FET)THz探测器在成像应用中潜力巨大。综述了近年来FET THz探测器在THz成像领域的研究进展(包括成像阵列、材料选择等方面),分析了设计和制造中存在的问题;指出天线和像素间距是限制大规模阵列化的重要因素,并在此基础上对未来的研究方向进行了展望;指出新的材料和结构设计将进一步改善器件性能,从而实现更快速、更清晰的THz成像。

场效应晶体管太赫兹探测器在太赫兹成像领域的研究进展(上)

太赫兹(Terahertz,THz)波具有能量低、穿透性强、分辨率高等特性,因而THz成像技术在安全检测、医学诊断、无损探伤等领域具有广阔的应用前景。THz探测器作为THz成像系统的重要组成部分,其性能对成像分辨率、成像速度等有重要影响。由于具备可室温工作、易大面积集成、响应速度快等特性,场效应晶体管(Field Effect Transistor,FET)THz探测器在成像应用中潜力巨大。综述了近年来FET THz探测器在THz成像领域的研究进展(包括成像阵列、材料选择等方面),分析了设计和制造中存在的问题;指出天线和像素间距是限制大规模阵列化的重要因素,并在此基础上对未来的研究方向进行了展望;指出新的材料和结构设计将进一步改善器件性能,从而实现更快速、更清晰的THz成像。

堆内自给能中子探测器信号电流计算方法研究

自给能中子探测器(Self-Powered Neutron Detectors,SPNDs)是核反应堆监测和保护系统的核心设备,其测量到的电流直接反映堆芯功率的大小和分布。探测器绝缘体是影响信号电流计算精度的主要因素,在SPND的研发设计中占有重要地位。为进一步提升SPND信号电流计算方法的精度,本文根据SPND电流产生机理以及绝缘体中固有的空间电场效应,提出了三种不同的中子、光子电流计算方法,并进行了详细的对比验证。结果表明:三种方法计算结果的差异小于1%,显示了相当的精度。此外,以反应堆工程中应用广泛的铑SPND为例,计算结果表明其信号电流主要由中子产生,光子引起的电流一般不超过5%。本文所提出的电流计算方法在反应堆上经过了大量的实验验证,理论和实验结果的差异均小于3%,证明了其有效性和精度。该方法已经应用于中国第三代先进大型压水反应堆——“华龙一号”,并具有通用性。它可用于不同类型自给能探测器的电流分析,也可为其他反应堆(如第四代快中子堆和后续的聚变堆)的堆芯监测系统提供有益的参考。

基于地理探测器的元阳梯田地质灾害影响因素及滑坡成因分析

元阳梯田受其特殊的地理位置、地表植被和农耕文化影响,表生地质灾害频发,对其生态价值和文化价值造成极大损害,梯田区域的地质灾害防治显得尤为关键。在详细野外调查基础上,结合元阳梯田区15 m分辨率遥感影像数据,利用空间叠加分析和地理探测器模型对研究区地质灾害影响因素开展了详细研究。结果表明:元阳梯田区地质灾害(隐患)点中滑坡灾害(隐患)点数量占比为93.39%,小型规模灾害(隐患)点数量占比为87.69%,总体表现为以滑坡性质的小型灾害为主;地质灾害分布的影响因素主要为地形坡度,其次为地质构造,受地貌单元影响最弱;滑坡灾害形成的影响因素具有复合性特点,其中强烈的河流侵蚀作用、地壳抬升作用和活跃的断裂构造活动是其成灾的主要地质环境背景,丰富的降雨量和人类工程活动是其成灾的主要触发因素。通过研究可进一步认识元阳梯田地质灾害影响因素及形成条件,可更好地助力于地方防灾减灾体系提升,也可为区域地质灾害风险分析提供一定的参考。

核电贯穿件气密检漏仪现场校准方式探讨

文章介绍了基于流量补充法的核电安全壳贯穿件泄漏率试验的试验原理和设备,结合工程现场经验,分析了目前国内安全壳贯穿件泄漏率试验的现场实施情况,提出了对试验设备气密检漏仪的现场校准。依据试验原理提出了现场校准方式并分析了核电现场试验环境,以供参考。

小型风速发生装置在风速现场校准量值溯源中的应用与研究

国内各大型家电企业积极推动空调行业向绿色低碳持续转型,为了适应人们在日常生活中,对房间空调器合理的通风,适当的风速和空气的均匀分布,是取得既定的空气品质和舒适性的关键所在。风速参量可测,成为一个重要的指引性指标。基于本文对适用于空调器的性能和工作原理的分析,提出针对现场校准热式风速传感器的校准方法研究,以确保空调器检测线能满足日常检测使用要求。

Simulation of GaN micro-structured neutron detectors for improving electrical properties

Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.

A practical image reconstruction and processing method for symmetrically off-center detector CBCT system

CBCT scanners have been widely used in angiography,radiotherapy guidance,mammography and oral maxillofacial imaging.To cut detector size,reduce manufacturing costs and radiation dose while keeping a reasonable FOV,the flat panel detector can be placed off-center horizontally.This scanning configuration extends the FOV effectively.However,each projection is transversely truncated,bringing errors and artifacts in reconstruction.In this paper,a simple but practical method is proposed for this scanning geometry based on truncation compensation and the modified FDK algorithm.Numerical simulations with jaw phantom were conducted to evaluate the accuracy and practicability of the proposed method.A novel CBCT system for maxillofacial imaging is used for clinical test,which is equipped with an off-center small size flat panel detector.Results show that reconstruction accuracy is acceptable for clinical use,and the image quality appears sufficient for specific diagnostic requirements.It provides a novel solution for clinical CBCT system,in order to reduce radiation dose and manufacturing cost.

A method to measure the in situ magnetic field in a Hall thruster based on the Faraday rotation effect

This paper presents a method to measure the in situ magnetic field in a Hall thruster by optical non-invasive means, based on the optical Faraday rotation effect.This method does not affect the discharge of the thruster.Furthermore, its time resolution depends on the speed of the photodetector, and measurement at a MHz scale can be achieved.

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.

Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.

The origin of distorted intensity pattern sensed by a lens and antenna coupled AlGaN/GaN-HEMT terahertz detector

Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. The ability of accurate sensing the intensity pattern is required for terahertz imaging systems. Here, we report artefacts in the intensity pattern of a focused terahertz beam around 1 THz by scanning a silicon-lens and antenna coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) detector. The origin of the image distortion is found to be connected with one of the antenna blocks by probing the localized photocurrents as a function of the beam location and the frequency. Although the exact distortion is found with our specific antenna design, we believe similar artefacts could be commonplace in antenna-coupled FET terahertz detectors when the beam spot becomes comparable with the antenna size. To eliminate such artefacts, new antenna designs are welcomed to achieve strong asymmetry in the terahertz field distribution under the gate while maintaining a more symmetric radiation pattern for the whole antenna.

基于Geant4的β-γ混合场叠层闪烁体探测器的设计研究

在核工业的一些工作场所中往往同时存在β射线和γ射线,准确测量β粒子和γ粒子能谱对于相关工作人员的辐射防护十分重要。本文利用Geant4模拟了β粒子和γ粒子在叠层闪烁体探测器中的能量沉积,研究了材料和结构对叠层闪烁体探测器甄别性能的影响。模拟结果显示,对于双层结构的闪烁体探测器,第1层和第2层选用不同材料的闪烁体对β粒子的甄别影响不大,主要影响对γ粒子的甄别。γ粒子的误甄别率和识别率分别随第1层和第2层材料原子序数的增加而增加。3层结构闪烁体探测器对于γ粒子的误甄别率明显低于双层结构,并且γ粒子的误甄别率随第1层闪烁体厚度的增加而增加。经过对模拟结果分析,采用0.2 mm BC-444+17.8 mm BC-444+25 mm BaF_(2)的3层闪烁体结构甄别性能较好,对β粒子和γ粒子的平均识别率和误甄别率分别为96.7%、41.1%和<0.001%、0.16%。

固态降水传感器现场核查装置技术研究

针对气象观测台站固态降水传感器现场核查及测试的实际需求,研制了现场核查装置,结合砝码法实现了固态降水传感器的现场核查和测试;现场核查装置由基于ZigBee无线网络的数据获取装置和加重装置构成,数据获取装置具备环境气压、温度、相对湿度的实时检测能力,具备RS232、RS485及通断信号方式3种固态降水传感器接口的数据读取能力;加重装置由三角支架、OPD降水模拟器及砝码托盘组成,其中降水模拟器采用阻挡原有OPD降水发生探测器红外光束,人为给定指定频率脉冲信号的方法实现了降水的模拟,能够兼容多种型号的固态降水传感器;经实验测试,固态降水传感器能够准确识别加入其中的砝码重量,数据获取装置的3种接口数据读取准确度均达到100%;降水量测量值与理论值相关系数为0.9999;表明现场核查装置能够应用于固态降水传感器现场核查及测试业务。