Influence of Pretreatment Conditions of Stainless Steel Substrates on Field Emission Properties of Carbon Nanotubes Films

Carbon nanotubes (CNTs) are synthesized from methane and hydrogen gas mixture directly on stainless steel plates by microwave plasma chemical vapor deposition (MWPCVD).By varying pretreatment conditions of the substrates such as mechanically polishing and acid washing,it is found the polishing and acid washing can lower the turn-on field and improve the emission current density.The current density of the un-pretreated sample attains 1.2mA/cm 2,but the polished sample and polished acidly washed sample attain 3.2 and 2.75mA/cm 2,respectively,at the electric field of 6.25V/μm.

Fabrication and Field Emission of Silicon Nano-Crystalline Film

The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm 2 of current density,which is close to carbon nanotube film's.

Power consumption in a field emission panel

The power consumption and electric field distribution in a field emission display （FED） panel is optimized with a novel pixel structure. A circuit model is proposed to estimate the total power consumption in an FED panel which is composed of anode energy consumption, energy loss due to the leakage current and the energy dissipated in the parasitic capacitances. Moreover, the parasitic capacitances play a vital part in the power consumption and driving performance. In order to lower the parasitic capacitances, multiple dielectric layers are used as the gate electrode. Due to different etching speeds, a novel pixel structure is formed. As a result, the power consumption of an FED panel is reduced by 28% in a full white picture, and the electron beam performance is also better than that of the conventional structure.

First-principles Study of Field Emissions from Natrium-Encapsulated Boron-Nitride Nanotube in a Perpendicular Geometry

The field emission from pure boron-nitride nanotube and boron-nitride nanotube encapsu- lated with natrium atoms with the electric field perpendicular to the axis of nanotubes is simulated based on a self-consistent method using the density-functional formalism. It has been found that the nearly-free-electron states in boron-nitride nanotube would perform very well in field emissions after natrium atom encapsulation. The characters of total energy distribution curves are analyzed to seek the function of nearly-free-electron states in the field emission, with special attention to response of the emission current to the external electric field. At last, the perpendicular emission geometry is found to possess a very sensitive response degree which is supposed to be related to specific expansion orientation of the nearly-free-electron states in this system.

Field Emission from a Mixture of Amorphous Carbon and Carbon Nanotubes Films

A mixture of amorphous carbon and carbon nanotubes films was synthesized on stainless steel plates by a micro- wave plasma enhanced chemical vapor deposition system. The source gases were hydrogen and methane with flow rates of 100 and 16sccm,respectively,with a total pressure of 5.0kPa. The surface morphology and the structure of the films were characterized by field emission scanning electron microscopy （SEM） and Raman scattering spectroscopy. Field emission properties of as-deposited film were measured in a vacuum room below 5 ×10^ 5 Pa. The experimental results show that the initial turn-on field is 0. 9V/μm; The current density is 4.0mA/cm2 and the emission sites are dense and uniform at an electric field of 3.7V/μm. These results indicate that such a mixture of amorphous carbon and carbon nanotubes films is a promising material for field emission applications.

THE IMPROVEMENT OF ELECTRON FIELD EMISSION FROM AMORPHOUS CARBON FILMS DUE TO HYDROGEN PLASMA CHEMICAL ANNEALING EFFECT

Hydrogenated amorphous carbon films were fabricated by using layer-by-layer deposition method and hydrogen dilution method in a small d.c.-assisted plasma enhanced chemical vapor deposition system. It was found that the hydrogen plasma treatment could change the sp2/sp3 ratio to some extent by chemical etching. The improvements of field emission characteristics were observed compared with that from conventionally deposited a-C films, which can be attributed to the large field enhancement effect due to the inhomogeneous distribution of nanometer scale sp2 clusters and the reduction of the surface emission barrier due to the hydrogen termination.

Controlled growth and field emission of vertically aligned A1N nanostructures with different morphologies

The controllable growth of three different morphologies of AlN nanostructures （nanorod, nanotip and nanocrater） arrays are successfully realized by using chemical vapour deposition （CVD） technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid （VLS） mechanism. To investigate the factors affecting field emission （FE） properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AIN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2 V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.

Simple method to rapidly fabricate chain-like carbon nanotube films and its field emission properties

A simple process to fabricate chain-like carbon nanotube （CNT） films by microwave plasma-enhanced chemical vapor deposition （MPCVD） was developed successfully. Prior to deposition, the Ti/Al2O3 substrates were ground with Fe-doped SiO2 powder. The nano-structure of the deposited films was analyzed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, and Raman spectroscopy. The field electron emission characteristics of the chain-like carbon nanotube films were measured under the vacuum of 10-5 Pa. The low turn-on field of 0.80 V/μm and the emission current density of 8.5 mA/cm2 at the electric field of 3.0 V/μm are obtained. Based on the above results, chain-like carbon nanotube films probably have important applications in cold cathode materials and electrode materials.

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

Enhanced field emission characteristics of thin-Au-coated nano-sheet carbon films

This paper reports that the nano-sheet carbon films （NSCFs） were fabricated on Si wafer chips with hydrogen- methane gas mixture by means of quartz-tube-type microwave plasma chemical vapour deposition （MWPCVD）. In order to further improve the field emission （FE） characteristics, a 5-nm Au film was prepared on the samples by using electron beam evaporation. The FE properties were obviously improved due to depositing Au thin film on NSCFs. The FE current density at a macroscopic electric field, E, of 9 V/μm was increased from 12.4 mA/cm2 to 27.2 mA/cm2 and the threshold field was decreased from 2.6 V/μm to 2.0 V/μm for Au-coated carbon films. A modified F-N model considering statistic effects of FE tip structures in the low E region and a space-chavge-limited-current effect in the high E region were applied successfully to explain the FE data of the Au-coated NSCF.

Field emission properties of capped carbon nanotubes doped by alkali metals:a theoretical investigation

The electronic structures and field emission properties of capped CNT55 systems with or without alkali metal atom adsorption were systematically investigated by density functional theory calculation.The results indicate that the adsorption of alkali metal on the center site of a CNT tip is energetically favorable.In addition,the adsorption energies increase with the introduction of the electric field.The excessive negative charges on CNT tips make electron emittance much easier and result in a decrease in work function.Furthermore,the inducing effect by positively charged alkali metal atoms can be reasonably considered as the dominant reason for the improvement in field emission properties.

An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel

We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.

Enhanced Field Emission from Printed Carbon Nanotubes by Hard Hairbrush

A method, the morphology of screen printed carbon nanotube pastes is modified using a hard hairbrush, is presented. In this way, the organic matrix material is preferentially removed. Compared to those untreated films, the turn-on electric field of the treated film decreases from 2.2V/μm to 1.6V/μm, while the total emission current of the treated increases from 0.6mA/cm2 to 3mA/cm2, and uniform emission site density image has also been observed.

Electrophoretic Carbon Nanotube Field Emission Layer for Plasma Display Panels

A carbon-nanotube(CNT) electrophoretic deposition(EPD) process has been developed to prepare a field emission layer in plasma display panels(PDP) for discharge voltage reduction. The CNT layer as a source of discharge priming electrons has been fabricated on the PDP front panel. The balling grinding,mix-acid treatment and EPD parameters have been investigated in order to obtain good uniformity and excellent field emission capability of CNT layer, in order to meet the specifications of CNTs in PDP cell. The measured turn-on field was around 1.1 V/μm in the field emission testing while the minimum sustaining voltage was decreased by 30~40 V with the use of CNT layer in the discharge testing.

Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

In this paper,we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition.The diamond films consisting of micro-grains(nano-grains) were realized with low(high) boron source flow rate during the growth processes.The transition of micro-grains to nano-grains is speculated to be strongly(weekly) related with the boron(nitrogen) flow rate.The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate.The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples,which are related to the combined phase composition,boron doping level and texture structure.There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition

Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition （MPCVD） in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope （FESEM） and Raman spectroscopy. These nano^carbon films are possessed of good field emission （FE） characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim （F-N） model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current （SCLC） effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.

Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing

Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.

ZnO nanorod arrays with tunable size and field emission properties on an ITO substrate achieved by an electrodeposition method

In the present work, vertically aligned ZnO nanorod arrays with tunable size are successfully synthesized on nonseeded ITO glass substrates by a simple electrodeposition method. The effect of growth conditions on the phase, morphology, and orientation of the products are studied in detail by X-ray diffraction （XRD）, scanning electron mi-croscopy （SEM）, and transmission electron microscopy （TEM）. It is observed that the as-prepared nanostructures exhibit a preferred orientation along c axis, and the size and density of the ZnO nanorod can be controlled by changing the concentration of ZnC12. Field emission properties of the as-synthesized samples with different diameters are also studied, and the results show that the nanorod arrays with a smaller diameter and appropriate rod density exhibit better emission properties. The ZnO nanorod arrays show a potential application in field emitters.

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

The field emission （FE） properties of vertically aligned graphene sheets （VAGSs） grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC （10-10） substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC （000-1 ） substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed.

Field Emission of SiCN Thin Films Bombarded by Ar^+ Ions

SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar + ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar + bombardment were studied in the super vacuum environment of 10 -6 Pa. It was showed that the turn\|on field (defined as the point where the current\|voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm 2 . The composition before and after Ar + bombardment was compared using X\|ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar + .