A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition techniq...A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.展开更多
During the past decades,nonlinear optical（NLO）materials have attracted special interest because of their potential applications in photonic devices,such as optical switching,frequency conversion and electro-optic mo...During the past decades,nonlinear optical（NLO）materials have attracted special interest because of their potential applications in photonic devices,such as optical switching,frequency conversion and electro-optic modulators.Among the finding ways to obtain excellent NLO materials with both large NLO response and short response time,展开更多
基金Supported by the Scientific Research Deanship of University of Dammam under Grant No 2014264
文摘A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.
基金supported by the National Natural Science Foundation of China(Grant No.11474046)Program for New Century Excellent Talents in University(Grant No.NCET-13-0702)+3 种基金Fundamental Research Funds for the Central Universities(Grant Nos.DC201502080202,and DC201502080203)Program for Liaoning Excellent Talents in University(LNET)(Grant No.LR2015016)Science and Technique Foundation of Dalian(Grant Nos.2014J11JH134,and 2015J12JH201)Education Department of Liaoning Province of China.
文摘During the past decades,nonlinear optical（NLO）materials have attracted special interest because of their potential applications in photonic devices,such as optical switching,frequency conversion and electro-optic modulators.Among the finding ways to obtain excellent NLO materials with both large NLO response and short response time,
