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A new model for film bulk acoustic wave resonators 被引量:1
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作者 李玉金 元秀华 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期368-373,共6页
Based on cavity resonance and sandwich composite plate (3D) theoretical model for frequency dispersion characterization theory, this paper presents a universal three-dimensional and displacement profile shapes of th... Based on cavity resonance and sandwich composite plate (3D) theoretical model for frequency dispersion characterization theory, this paper presents a universal three-dimensional and displacement profile shapes of the film bulk acoustic resonator (FBARs). This model provides results of FBAR excited thickness-extensional and flexure modes, and the result of frequency dispersion is proposed in which the thicknesses and impedance of the electrodes and the piezoelectric material are taken into consideration; its further simplification shows good agreement with the modified Butterworth-Van-Dyke (MBVD) model. The displacement profile reflects the vibration stress distribution of electrode shapes and the lateral resonance effect, which depends on the axis ratio of the electrode shapes a/b. The results are consistent with the 3D finite element method modeling and laser interferometry measurement in general. 展开更多
关键词 film bulk acoustic wave resonators acoustic field vibration cavity resonance piezoelectric com-posite
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Tunable Ba_(0.5) Sr_(0.5) TiO_3 film bulk acoustic resonators using SiO_2 /Mo Bragg reflectors
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作者 杨天应 蒋书文 +1 位作者 李汝冠 姜斌 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第10期369-374,共6页
Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) fi... Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias( 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature. 展开更多
关键词 Ba x Sr 1-x TiO 3 tunable film bulk acoustic wave resonator ferroelectric acoustic Bragg reflector
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