Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick ...Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.展开更多
结合文献计量学和内容分析法,通过对2000—2020年间中国知网和Web of Science核心数据库中1 932篇与“可降解膜”相关中英文文献客观、系统地分析,对比了国内外可降解膜的研究进展。分析了国内外可降解膜研究历程、主要研究力量,包括国...结合文献计量学和内容分析法,通过对2000—2020年间中国知网和Web of Science核心数据库中1 932篇与“可降解膜”相关中英文文献客观、系统地分析,对比了国内外可降解膜的研究进展。分析了国内外可降解膜研究历程、主要研究力量,包括国家、机构和作者。对比分析了国内外可降解膜研究前沿及热点的演变,主要包括可降解膜的类型、可降解膜性能优化方法及其在多个领域的应用效果评估。结果表明,低成本、高性能可降解膜研发及其全生命周期环境风险评估等是未来可降解膜的研究重点。展开更多
文摘Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.
文摘结合文献计量学和内容分析法,通过对2000—2020年间中国知网和Web of Science核心数据库中1 932篇与“可降解膜”相关中英文文献客观、系统地分析,对比了国内外可降解膜的研究进展。分析了国内外可降解膜研究历程、主要研究力量,包括国家、机构和作者。对比分析了国内外可降解膜研究前沿及热点的演变,主要包括可降解膜的类型、可降解膜性能优化方法及其在多个领域的应用效果评估。结果表明,低成本、高性能可降解膜研发及其全生命周期环境风险评估等是未来可降解膜的研究重点。
