ELLIPSOMETRY MEASUREMENT ON ANISOTROPIC FILM AND CRYSTAL

In this paper, a method of light intensity mode ellipsometry for optical constant measurement on anisotropic films and crystals is studied. Softwares for this method have also been developed Based on the theories and correspond softwares, experiments are carried out carefully for anisotropic film and bulk samples with optical axis parallel to their surface as well as optical axis perpendicular to the surface. Moreover, the discrepancy between measured data and calculated results are also analyzed. The measurement system developed in this paper is powerful to measure optical parameter of anisotropic film and bulk samples.

Growth of High-Quality Superconducting FeSe0.5Te0.5 Thin Films Suitable for Angle-Resolved Photoemission Spectroscopy Measurements via Pulsed Laser Deposition

High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on single- crystal substrates of Al2O3 （0001）, SrTiO3 （001）, and MgO （001）, as well as monitoring the real-time growth process on MgO substrates with reflection high energy electron diffraction, we find the appropriate parameters for epitaxial growth of high-quality FeSe0.5 Te0.5 thin films suitable for angle-resolved photoemission spectroscopy measurements. We further report the angle-resolved photoemission spectroscopy characterization of the super- conducting films. The clearly resolved Fermi surfaces and the band structure suggest a sample quality that is as good as that of high-quality single-crystals, demonstrating that the pulsed laser deposition method can serve as a promising technique for in situ preparation and manipulation of iron-based superconducting thin films, which may bring new prosperity to angle-resolved photoemission spectroscopy research on iron-based superconductors.

Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma

a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

Physical and Chemical Properties of GdN: A Critical Comparison between Single Crystals and Thin Films, Theory and Experiment

Since about 10 years, there is a controversy about physics and chemistry of GdN between stoichiometric (tested) large single crystals and off-stoichiometric thin films. GdN single crystals are anti-ferromagnetic for applied magnetic fields of only 10 Oe, become ferromagnetic for excess electrons and larger magnetic fields. They are semimetallic. Thin films are ferromagnetic and semiconductors. Over the time, many experiments have been performed on both systems and the physics in each system is consistent. Band structure computations either yield ferromagnetic semimetals or ferromagnetic semiconducting thin films. There seems to be two incompatible worlds, those of single crystals and those of thin films. In the present work, the author compares directly the various measurements and calculations and gives reasons for their different results.

Nonlinear phase error analysis of equivalent thickness in a white-light spectral interferometer

A white light spectral interferometry based on a Linnik type system was established to accurately measure the thin film thickness through transparent medium.In practical work,the equivalent thickness of a beam splitter and the mismatch of the objective lens introduce nonlinear phase errors.Adding a transparent medium also increases the equivalent thickness.The simulation results showthat the equivalent thickness has a significant effect on thin film thickness measurements.Therefore,it is necessary to perform wavelength correction to provide a constant equivalent thickness for beamsplitters.In the experiments,some pieces of cover glasses as the transparent medium were added to the measured beam and then a standard thin film thickness of 1052.2±0.9 nm was tested through the transparent medium.The results demonstrate that our system has a nanometer-level accuracy for thin film thickness measurement through transparent medium with optical path compensation.

Effect of Chloride on Semiconducting Properties of Passive Films Formed on Supermartensitic Stainless Steel in NaHCO_3 Solution

The effects of chloride ion on the electrochemical behavior and the semiconducting properties of the passive film on supermartensitic stainless steel in 0.5 mol/L NaHCO_3 solution were investigated using potentiodynamic polarization, the potentiostatic current transients and Mott-Schottky analysis. The results indicated that chloride ion narrowed passivation region and improved pitting susceptibility. The steady state current densities were independent of film-formed potentials, which was in good agreement with the assumption of the point defect model （PDM）. The capacitance results showed the fact that the passive films had a multilayer character. The defect density decreased with increasing passive film formation potential. The chloride ion induced changes of the acceptor densities and donor densities of the passive films.