Scanning Tunneling Microscopic and Scanning Tunneling Spectroscopic Studies of Nanocrystalline CdSe Thin Film

Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,

Molecular Beam Epitaxy Growth and Scanning Tunneling Microscopy Study of Pyrite CuSe2 Films on SrTiO3

We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov （layer-plus-island） mode with a preferential orientation of （111）. Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.

INFLUENCE OF MAGNETIC FIELD ON ACCURACY OF ECM BY CHANGING THE CONDUCTIVITY OF ANODE FILM

The change of conductivity, thickness and scanning electron microscopy （SEM） appearance of the anode film of CrWMn in 10% NaNO3 at different anode potential either with or without the magnetic field applied are investigated by testing film resistance, galvanostatic transient and using SEM to design magnetic circuit in magnetic assisted electrochemical machining （MAECM）. The experiments show that the anode film has semi-conducting property. Compared with the situation without magnetic field applied, the resistance of the film formed at 1 .SV （anode potential） increased and decreased at 4.0V while B=0.4T and the magnetic north pole points toward anode. The SEM photo demonstrates that the magnetic field will densify the film in the passivation area and quicken dissolution of the anode metal in over-passivation area. Based on the influence of magnetic field on electrochemical machining（ECM） due to the changes of the anode film conductivity behavior, the magnetic north pole should be designed to point towards the workpiece surface that has been machined. Process experiments agree with the results of test analysis.

Degradation Behavior of Ti-6Al-4V Alloys for Dental Applications in Acidic Artificial Saliva Containing Fluoride Ion

The aim of this work was to study the degradation behavior of Ti-6Al-4V alloys for dental applications in acidic artificial saliva with fluoride ion using electrochemical techniques, optical microscopy, scanning electron microscopy（SEM）, and energy dispersive spectrometry（EDS）. The experimental results showed that fluoride ion had significant influence on the degradation of Ti-6Al-4V alloys, and there was an obvious critical concentration of fluoride ion（about 0.1wt%）. With increasing fluoride ion concentration, the corrosion potential（Ecorr） of alloys moved toward negative and the impedance of alloys decreased, meanwhile, noticeable transformation from minimum corrosion to severe pitting corrosion was observed on alloys surface following the dissolution of TiO2 passive films, leading to the decrease of the corrosion resistance of alloys. The electrochemical dissolution of TiO2 passive films involved a nucleophilic attack of fluoride atom to the titanium atom of TiO2. In addition, Ca^（2＋）and Na~＋ in acidic saliva may involve the surface reactions and make the reactions more complex.

Improvement of thickness uniformity and elements distribution homogeneity for multicomponent films prepared by coaxial scanning pulsed laser deposition technique

In conventional pulsed laser deposition （PLD） technique, plume deflection and composition distribution change with the laser incident direction and pulse energy, then causing uneven film thickness and composition distribution for a multicomponent film and eventually leading to low device quality and low rate of final products. We present a novel method based on PLD for depositing large CIGS films with uni- form thickness and stoichiometry. By oscillating a mirror placed coaxially with the incident laser beam, the laser＇s focus is scanned across the rotating target surface. This arrangement maintains a constant re- flectance and optical distance, ensuring that a consistent energy density is delivered to the target surface by each laser pulse. Scanning the laser spot across the target suppresses the formation of micro-columns, and thus the plume deflection effect that reduces film uniformity in conventional PLD technique is eliminated. This coaxial scanning PLD method is used to deposit a CIGS film, 500 nm thick, with thickness uniformity exceeding ±3% within a 5 cm diameter, and exhibiting a highly homogeneous elemental distribution.

Microstructure and secondary phases in epitaxial LaBaCo_2O_(5.5 + δ) thin films

Aberration-corrected scanning transmission electron microscopy was employed to investigate the microstructures and secondary phases in LaBaCo2O5.5＋δ（LBCO） thin films grown on SrTiO3 （STO） substrates. The as-grown films showed an epitaxial growth on the substrates with atomically sharp interfaces and orientation relationships of [100]LBCO//[100]STO and （001）LBCO//（001）STO. Secondary phases were observed in the films, which strongly depended on the sample fabrication conditions. In the film prepared at a temperature of 900 ℃, nano-scale CoO pillars nucleated on the substrate, and grew along the [001] direction of the film. In the film grown at a temperature of 1000 ℃, isolated nano-scale C0304 particles appeared, which promoted the growth of {111 } twinning structures in the film. The orientation relationships and the interfaces between the secondary phases and the films were illustrated, and the growth mechanism of the film was discussed.