The Synthesis and Film Forming Properties of Unsymmetrical Phthalocyanine Bearing One Crown Ether Void

The synthesis of phthalocyanines bearing one crown ether macrocycle and three alkoxyl chains is described. They form stable monolayers and can be employed for the preparation of multilayer films by the Langmuir-Blogett technique. The orientations of the molecules in the film were affected by alkali metal ions in the subphase. lt is suggested that a kind of 'sandwich' dimer was formed in the film induced by potassium ions

SYNTHESIS OF PPCuPc FILM BY MICROWAVE PLASMA CHEMICAL VAPORIZATION DEPOSITION(MPCVD)

Using a low power microwave generator(W_(max)=100W) and a Surfatron discharge device, Plasma-polymerized copper phthalocyanine (PPCuPc) film was synthesised from monomer copper phthalocyanine(CuPc) by microwave plasma chemical vaporization deposition(MPCVD) with Ar as incorporation gas. The film was characterized by FTIR and ESCA. The role of dissociation of chemical bond in the polymerization process and the influence of substrate temperature and material on deposition were investigated in some detail.

Synthesis of A Novel UV-curable Oligmer 1,4-cyclohexanedimethanol Glycidyl Ether Acrylate and Study on Its UV-curing Properties

A novel UV-curable oligmer 1,4-cyclohexanedimethanol glycidyl ether acrylate（CHDMGEA） was synthesized by utilizing 1,4-cyclohexanedimethanol glycidyl ether（CHDMGE） and acrylic acid（AA） as starting materials, triphenyl phosphine as catalyst and p-hydroxyanisole as inhibitor. The optimum synthetic conditions were that the concentration of triphenyl phosphine was 0.90% of reactants by weight, the concentration of p-hydroxyanisole was 0.20% of reactants by weight, the reaction temperature was 90-100 ℃, and the molar ratio of CHDMGE to AA was 0.5：1.1. The experimental results show that CHDMGEA is a kind of good UV-curable oligmer. The impact resistance of the UV-cured films with CHDMGEA as oligmer to prepare UV-curing coating was superior to that of the UV-cured films with bisphenol A diglycidyl ether diacrylate（BPGEA） as oligmer to prepare UV-curing coating.

The effect of complexing agent on crystal growth, structure and properties of nanostructured Cu_(2-x)S thin films

Thin films of Cu2 x S（x = 0, 1） were deposited on self-assembled, monolayer modified substrates in the copper–thiosulfate system with various concentrations of ethylene diamine tetraacetic acid（EDTA） at a low temperature of 70 8C. The thin films were characterized by means of X-ray diffraction（XRD）, X-ray photoelectron spectroscope（XPS）, field emission scanning electron microscopy（FESEM）, transmission electron microscopy（TEM）. The optical and photoelectrochemical（PEC） properties of the Cu2 x S semiconductor films were investigated by ultraviolet–visible（UV–vis） absorption spectroscopy and a three-electrode system. It is found that EDTA plays a key role in the process of Cu2 x S nanocrystals formation and growth. The compositions of the Cu2 x S nanocrystals varied from Cu2S（chalcocide） to Cu S（covellite） through adjusting the concentration of EDTA, which is used as a complexing agent to yield high-quality Cu2 x S films. The growth mechanisms of Cu2 x S nanocrystals with different EDTA concentrations are proposed and discussed in detail.

Chemical Bath Co-deposited ZnS Film Prepared from Different Zinc Salts: ZnSO_4—Zn(CH_3COO)_2, Zn(NO_3)_2—Zn(CH_3COO)_2,or ZnSO_4—Zn(NO_3)_2

ZnSO4-Zn（CH3COO）2, Zn（NO3）2-Zn（CH3COO）2, ZnSO4-Zn（NO3）2, ZnSO4, Zn（NO3）2 or Zn（CH3COO）2 have been used as zinc sources to prepare ZnS thin films by chemical bath deposition and co-deposition methods. Zn（NO3）2 or/and Zn（CH3COO）2 is/are favorable for cluster by cluster deposition process while ZnSO4 favors ion by ion deposition process regardless of concentration ratios of ZnSO4. However, Zn（NO3）2 affects the nucleation density of ZnS nuclei on the substrate. ZnS thin films deposited from ZnSO4-Zn（CH3COO）2 are not only more homogeneous and compact, but also have higher growth rate and adhesion on to the glass substrate. The cubic ZnS films are obtained after only single deposition. The average transmission of films from S6, S7, S8, S9 and S1 for 2 and 2.5 h is greater than 85% in visible region. Compared with the film from S6 （112 nm）, the film from S7 is not only thicker （125 nm）, but also more transparent. The band gaps of the films deposited from S6,S7, S8, S9 and S1 for 2 and 2.5 h range from 3.88 to 3.98 eV. The effects of anions from different zinc salts are discussed in detail.

Effect of Annealing Temperature on the Morphology and Sensitivity of the Zinc Oxide Nanorods-Based Methane Senor

ZnO nanorods in the form of thin films were synthesized by a facile chemical route and the effect of annealing temperature on the structure and sensitivity of such ZnO-based sensors was studied in detail towards methane sensing.Morphological analyses of such films were carried out by scanning electron microscopy,whereas,the crystalline structure and phase purity of the films were analysed by X-ray diffraction technique.The films were observed to display a gradual change in their morphology from granular to dense nanorods and each of them was used to fabricate methane sensor prototype.They were also tested for temperature-dependent methane-sensing capability with varying methane concentrations.The optimized sensor exhibited highest gas response of ＊80% at 250 °C with significantly low response and recovery time.